Foshan-Blue-Rocket-Elec-8050M

Part #Foshan-Blue-Rocket-Elec-8050M
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Foshan-Blue-Rocket-Elec-8050M
8050M  
Rev.F Jan.-2022  
DATA SHEET  
描述
/ Descriptions  
SOT-23
塑封封装
NPN
半导体三极管。
Silicon NPN transistor in a SOT-23 Plastic Package.  
特征
/ Features  
与
8550M
互补。  
Complementary pair with 8550M.  
用途
/ Applications  
用于功率放大电路。  
Power amplifier applications.  
内部等效电路
/ Equivalent
 
Circuit  
引脚排列
/ Pinning  
3
1
2
PIN1
:
Base  
PIN 2
:
Emitter  
PIN 3
:
Collector  
放大及印章代码
/ h

FE

Classifications & Marking  
h

FE

Classifications  
Symbol  
B
C
D
h

FE

Range  
Marking  
85~160  
HY1B  
120~200  
HY1C  
160~300  
HY1D  
1
/
6  

8050M  
Rev.F Jan.-2022  
DATA SHEET  
极限参数
/ Absolute
 
Maximum Ratings(Ta=25
℃
)  
参数  
Parameter  
符号  
Symbol  
V

CBO  

数值  
Rating  
40  
单位  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current – Continuous  
Base Current  
V

CEO  

V

EBO  

I

C  

25  
6
V
V
1.5  
A
I

B  

0.5  
A
Collector Power Dissipation  
Junction Temperature  
P

C  

T

j  

300  
mW  
℃
℃
150  
T

stg  

Storage Temperature Range  
-55
~
150  
电性能参数
/ Electrical
 
Characteristics(Ta=25
℃
)  
参数  
符号  
测试条件  
最小值 典型值 最大值
 
单位  
Parameter  
Collector to Base Breakdown  
Voltage  
Collector to Emitter Breakdown  
Voltage  
Symbol  
T
e
st Conditions  
Min  
Typ  
Max  
Unit  
V

CBO

I

C

=0.1mA  
V

CEO

I

C

=2.0mA  
I

E

=0  
I

B

=0  
40  
V
25  
V
Emitter to Base Breakdown Voltage
 
V

EBO  

I

C

=0.1mA  
V

CB

=35V  
V

EB

=6.0V  
I

C

=0  
6.0  
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
I

CBO  

I

EBO  

I

E

=0  
0.1  
0.1  
300  
μA  
μA  
I

C

=0  
h

FE(1)

V

CE

=1.0V  
h

FE(2)

V

CE

=1.0V  
h

FE(3)

V

CE

=1.0V  
I

C

=100mA  
I

C

=800mA  
I

C

=5.0mA  
85  
40  
45  
DC Current Gain  
Collector to Emitter Saturation  
Voltage  
V

CE(sat)

I

C

=800mA  
I

B

=80mA  
0.28  
0.5  
V
Base to Emitter Voltage  
V

BE  

V

CE

=1.0V  
I

C

=10mA  
I

B

=80mA  
0.66  
0.98  
190  
1.0  
1.2  
V
V
Base to Emitter Saturation Voltage
 
V

BE(sat)

I

C

=800mA  
Transition Frequency  
f

T  

I

C

=50mA  
V

CE

=10V  
I

E

=0  
100  
MHz  
V

CB

=10V  
f=1.0MHz  
Collector output capacitance  
C

ob  

9.0  
pF  
2
/
6  

8050M  
Rev.F Jan.-2022  
DATA SHEET  
电参数曲线图
/ Electrical
 
Characteristic Curve  
3
/
6  

8050M  
Rev.F Jan.-2022  
DATA SHEET  
外形尺寸图
/ Package
 
Dimensions  
4
/
6  

8050M  
Rev.F Jan.-2022  
DATA SHEET  
印章说明
/ Marking
 
Instructions  
HY1C  
说明:  
H
:  
Y1
:  
C
:  
Note:  
H:  
为公司代码  
为型号代码  
为
h

FE

分档代码  
Company Code  
Y1:  
Product Type  
C:  
h

FE

Classifications Symbol Code  
5
/
6  

8050M  
Rev.F Jan.-2022  
DATA SHEET  
回流焊温度曲线图
(
无铅
) /
Temperature Profile for IR Reflow Soldering(Pb-Free)  
350  
300  
245±5℃  
5±0.5 sec  
250  
200  
150  
60~90 sec  
100  
50  
0
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
260 280  
Time(sec)  
说明:  
Note:  
1
、预热温度
150
~
180
℃,时间
60
~
90sec;  
2
、峰值温度
245
±
5
℃,时间持续为
5
±
0.5sec;  
3
、焊接制程冷却速度为
2
~
10
℃
/sec.  
1.Preheating:150~180
℃
, Time:60~90sec.  
2.Peak
T
e
mp.:245
±
5
℃
, Duration:5
±
0.5sec.  
3. Cooling Speed: 2~10
℃
/sec.  
耐焊接热试验条件
/ Resistance
 
to Soldering Heat Test Conditions  
温度:
260
±
5
℃  
时间:
10
±
1 sec.  
T
e
mp.:260
±
5
℃  
Time:10
±
1 sec  
包装规格
/ Packaging
 
SPEC.  
卷盘包装
/ REEL  
Package Type  
Units
包装数量  
Dimension
包装尺寸
(unit
:
mm

3

)  
Units/Reel  
Reels/Inner Box  
Units/Inner Box  
Inner Boxes/Outer Box  
Units/Outer Box  
封装形式  
Reel  
7
〞
×8  
Inner Box
盒  
Outer Box
箱  
只
/
卷盘  
卷盘
/
盒  
只
/
盒  
盒
/
箱  
只
/
箱  
SOT-23  
3,000  
10  
30,000  
6
180,000  
180×120×180  
390×385×205  
使用说明
/ Notices  
6
/
6