Foshan-Blue-Rocket-Elec-BR4407
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BR4407
Rev.G Oct.-2018
DATA SHEET
描述
/ Descriptions
SOP-8 塑封封装
P 沟道 MOS 场效应管。
P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package.
特征
/ Features
V
DS
(V) = -30V
I
D
= -12 A (V
GS
= -20V)
R
DS(ON)
< 13m
Ω
(V
GS
= -20V)
DS(ON)
< 14m
Ω
(V
GS
= -10V)
R
用途
/ Applications
用于电源管理，便携式设备和电池供电系统。
Power Management in Notebook computer, Portable Equipment and Battery powered systems.
内部等效电路
/ Equivalent
Circuit
引脚排列
/ Pinning
8
7
6
5
1
2
3
4
PIN1
：
S
PIN 5
：
D
PIN 2
：
S
PIN 6
：
D
PIN 3
：
S
PIN 7
：
D
PIN 4
：
G
PIN 8
：
D
印章代码
/ Marking
见印章说明
See Marking Instructions.
1
/
8
BR4407
Rev.G Oct.-2018
DATA SHEET
极限参数
/ Absolute
Maximum Ratings(Ta=25
℃
)
参数
Parameter
符号
Symbol
V
DSS
数值
Rating
-30
单位
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
A
Continuous Drain Current
A
Pulsed Drain Current
B
V
GSS
±20
-12
V
A
I
D
(T
a
=25°C)
I
D
(T
a
=70°C)
I
DM
-10
A
-60
A
Power Dissipation for Single Operation
A
Power Dissipation for Single Operation
A
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
A
Thermal Resistance-Junction to Ambient
A
Maximum Junction-to-Lead
C
Note:
P
D
(T
a
=25
℃
)
3
W
P
D
(T
a
=100
℃
)
2.1
W
T
j
150
-55
～
150
40
℃
T
stg
℃
℃
/W
℃
/W
℃
/W
R
θ
JA
（
t
≦
10s
）
R
θ
JA
75
R
θ
JL
30
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a
still air environment with T
A
=25°C. The value in any given application depends on the user’s specific
board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5%
max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still
air environment with T
A
=25°C. The SOA curve provides a single pulse rating. Rev 1 : Sept 2005
2
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8
BR4407
Rev.G Oct.-2018
DATA SHEET
电性能参数
/ Electrical
Characteristics(Ta=25
℃
)
参数
Parameter
符号
Symbol
BV
DSS
测试条件
T
e
st Conditions
最小值 典型值 最大值
单位
Min
Typ
Max
Unit
-30
V
Drain-Source Breakdown Voltage
I
D
=-250
μ
A V
GS
=0V
-1.0
-5.0
V
DS
=-24V
V
GS
=0V
V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
μ
A
V
DS
=-24V
T
J
=55°C
±100
-3.0
nA
V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
I
GSS
V
GS(th)
I
D(ON)
V
DS
=0V
V
GS
=±20V
I
D
=-250
μ
A
V
DS
=-5V
I
D
=-10A
-1.0
60
-1.5
V
DS
=VGS
V
GS
=-10V
V
GS
=-10V
A
11
15
14
19
13
VGS=-10V I
D
=-10A
T
J
=125°C
m
Ω
Static Drain-Source On-Resistance
R
DS(ON)
10
24
26
V
GS
=-20V
I
D
=-10A
V
GS
=-4.5V I
D
=-10A
S
V
Forward Transconductance
Diode Forward Voltage
g
FS
V
DS
=-5V
I
S
=-1A
I
D
=-10A
V
GS
=0V
-0.72 -1.0
-4.2
V
SD
Maximum Body-Diode Continuous
Current
A
nC
Ω
I
S
37.2
7
45
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
GS
=-10V
I
D
=-12A
V
DS
=-15V
V
DS
=0V
10.4
V
GS
=0V
f=1MHz
2.0
3.0
Gate Resistance
R
g
2076 2500
503
Input Capacitance
C
iss
C
oss
C
rss
t
d(ON)
t
r
V
GS
=0V
f=1MHz
V
DS
=-15V
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
302
12.4
8.2
V
GS
=-10V
R
L
=1.25
Ω
V
DS
=-15V
R
GEN
=3
Ω
ns
25.6
Turn-off Delay Time
Turn-off Fall Time
t
d(OFF)
t
f
12
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
I
F
=-12A
dI/dt=100A/
μ
s
I
F
=-12A
dI/dt=100A/
μ
s
33
23
40
ns
t
rr
nC
Q
rr
3
/
8
BR4407
Rev.G Oct.-2018
DATA SHEET
印章说明
/ Marking
Instructions
BR
4407
****
说明：
BR
：
4407
：
****
：
Note:
BR:
为公司代码
为型号代码
为生产批号代码，随生产批号变化。
Company Code.
4407:
****:
Product Type
Lot No. Code, code change with Lot No
.
7
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8
BR4407
Rev.G Oct.-2018
DATA SHEET
回流焊温度曲线图
(
无铅
) /
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明：
Note:
1
、预热温度
150
～
180
℃，时间
60
～
90sec;
2
、峰值温度
245
±
5
℃，时间持续为
5
±
0.5sec;
3
、焊接制程冷却速度为
2
～
10
℃
/sec.
1.Preheating:150~180
℃
, Time:60~90sec.
2.Peak
T
e
mp.:245
±
5
℃
, Duration:5
±
0.5sec.
3. Cooling Speed: 2~10
℃
/sec.
耐焊接热试验条件
/ Resistance
to Soldering Heat Test Conditions
温度：
260
±
5
℃
时间：
10
±
1 sec.
T
e
mp.:260±5
℃
Time:10±1 sec
包装规格
/ Packaging
SPEC.
卷盘包装
/ REEL
Package Type
Units
包装数量
Dimension
包装尺寸
(unit
：
mm
3
)
Units/Reel
Reels/Inner Box
Units/Inner Box
Inner Boxes/Outer Box
Units/Outer Box
封装形式
Reel
13
〞
×12
Inner Box
盒
Outer Box
箱
只
/
卷盘
卷盘
/
盒
只
/
盒
盒
/
箱
只
/
箱
SOP/ESOP-8
4,000
2
8,000
6
48,000
360×360×50
380×335×366
使用说明
/ Notices
8
/
8
