Foshan-Blue-Rocket-Elec-BRFL10N65

Part #Foshan-Blue-Rocket-Elec-BRFL10N65
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Foshan-Blue-Rocket-Elec-BRFL10N65
BRFL10N65  
Rev.F Dec.-2017  
DATA SHEET  
描述
/ Descriptions  
TO-220FL
塑封封装
N
沟道
MOS
场效应管。
N-CHANNEL MOSFET in a TO-220FL Plastic Package.  
特征
/ Features  
低栅电荷,低反馈电容,开关速度快。  
Low gate charge, low crss, fast switching.  
用途
/ Applications  
用于高功率 DC/DC 转换和功率开关。  
These devices are well suited for high efficiency switching DC/DC converters .  
内部等效电路
/ Equivalent
 
Circuit  
引脚排列
/ Pinning  
1
2
3
PIN1
:
G  
PIN 2
:
D  
PIN 3
:
S  
放大及印章代码
/ h

FE

Classifications & Marking  
见印章说明。
See Marking Instructions.  
1
/
6  

BRFL10N65  
Rev.F Dec.-2017  
DATA SHEET  
极限参数
/ Absolute
 
Maximum Ratings(Ta=25
℃
)  
参数  
Parameter  
符号  
Symbol  
V

DSS  

数值  
Rating  
650  
单位  
Unit  
V
Drain-Source Voltage  
Drain Current  
I

D

(
T
c
=25
℃
)  
I

D

(
T
c
=100
℃
)  
I

DM  

9.5  
5.7  
A
A
Drain Current  
Drain Current – Pulsed  
38  
A
Gate-Source Voltage  
V

GSS  

±20  
V
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Avalanche Current  
E

AS  

700  
mJ  
mJ  
A
E

AR  

15.6  
9.5  
I

AR  

Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Power Dissipation  
R

θ
JC  

2.5  
℃
/W  
℃
/W  
W
R

θ
JA  

62.5  
50  
P

D

(
T
c
=25
℃
)  
T

J

,T

STG  

Operating and Storage Temperature Range  
-55 to 150  
℃
电性能参数
/ Electrical
 
Characteristics(Ta=25
℃
)  
参数  
Parameter  
符号  
Symbol  
测试条件  
T
e
st Conditions  
最小值 典型值 最大值
 
单位  
Min  
Typ  
Max  
Unit  
Drain-Source Breakdown Voltage  
BV

DSS

V

GS

=0V  
I

D

=250
μ
A  
V

GS

=0V  
650  
V
V

DS

=600V  
I

DSS  

1.0  
10  
μ
A  
μ
A  
Zero Gate Voltage Drain Current  
V

DS

=480V  
T

C

=125
℃  
Gate-Body Leakage Current  
Forward  
I

GSS  

V

GS

=±20V  
V

DS

=0V  
±10  
4.0  
μ
A  
V
Gate Threshold Voltage  
V

GS(th)

V

DS

=V

GS  

R

DS(on)

V

GS

=10V  
I

D

=250
μ
A  
I

D

=4.75A  
I

D

=4.75A  
I

S

=9.5A  
2.0  
Static Drain-Source  
On-Resistance  
0.75 0.85  
8.0  
Ω
S
Forward Transconductance  
g

FS  

V

DS

=40V  
V

GS

=0V  
Drain-Source Diode Forward  
Voltage  
V

SD  

1.4  
V
Input Capacitance  
C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

1570 2040  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V

DS

=25V  
f=1.0MHz  
V

GS

=0V  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
166  
18  
215  
24  
23  
55  
69  
150  
300  
165  
V

DD

=300V  
R

G

=25
Ω  
I

D

=9.5A  
t

d(off)  

t

f  

144  
77  
2
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6  

BRFL10N65  
Rev.F Dec.-2017  
DATA SHEET  
电参数曲线图
/ Electrical
 
Characteristic Curve  
3
/
6  

BRFL10N65  
Rev.F Dec.-2017  
DATA SHEET  
外形尺寸图
/ Package
 
Dimensions  
4
/
6  

BRFL10N65  
Rev.F Dec.-2017  
DATA SHEET  
印章说明
/ Marking
 
Instructions  
BR  
10N65  
****  
说明:  
BR
:  
为公司代码  
为型号代码  
10N65
:   
****:  
Note:  



为生产批号代码,随生产批号变化。  
BR:
   
10N65:  
****:  
Company Code  
Product Type.  
Lot No. Code, code change with Lot No.  
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6  

BRFL10N65  
Rev.F Dec.-2017  
DATA SHEET  
波峰焊温度曲线图
(
无铅
) / Temperature
 
Profile for Dip Soldering(Pb-Free)  
说明:  
Note:  
1
、预热温度
25
~
150
℃,时间
60
~
90sec;  
2
、峰值温度
255
±
5
℃,时间持续为
5
±
0.5sec;  
3
、焊接制程冷却速度为
2
~
10
℃
/sec.  
1.Preheating:25~150
℃
, Time:60~90sec.  
2.Peak
T
e
mp.:255
±
5
℃
, Duration:5
±
0.5sec.  
3. Cooling Speed: 2~10
℃
/sec.  
耐焊接热试验条件
/ Resistance
 
to Soldering Heat Test Conditions  
温度:
270
±
5
℃  
时间:
10
±
1 sec.  
T
e
mp.:270±5
℃  
Time:10±1 sec  
包装规格
/ Packaging
 
SPEC.  
套管包装
/ TUBE  
Package Type  
Units
包装数量  
Dimension
包装尺寸
(unit
:
mm

3

)  
Units/Tube  
Tubes/Inner Box  
Units/Inner Box  
Inner Boxes/Outer Box
 
Units/Outer Box  
封装形式  
Tube
套管  
Inner Box
盒  
Outer Box
箱  
只
/
套管  
套管
/
盒  
只
/
盒  
盒
/
箱  
只
/
箱  
TO-220FL  
50  
20  
1,000  
5
5,000  
532×33×7.0  
555×164×50  
575×290×180  
使用说明
/ Notices  
6
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6