Fuji-Electric-6MBP15XSF060-50
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6MBP15XSF060-50
IGBT MODULE (X series)
600V / 15A / IPM
IGBT Modules
Features
Low-side IGBTs are separate emitter type
Short circuit protection
Temperature sensor output function
Overheating protection
Under voltage protection
Fault signal output function
Input interface : TTL (3.3V/5V) Active high logic
Applications
AC 100 ~ 240V three phase inverter drive for small power
AC motor drives (such as compressor motor drive for
air conditioner, compressor motor drive
for heat pump
applications, fan motor drive, ventilator motor drive)
Terminal assign and Internal circuit
VB(U)
Pin No.
Pin Name
Pin Description
3
5
7
NC 36
VB(V)
VB(W)
3
VB (U)
VB (V)
High-side bias voltage for U-phase IGBT driving
High-side bias voltage for V-phase IGBT driving
High-side bias voltage for W-phase IGBT driving
Signal input for high side U-phase
Signal input for high side V-phase
Signal input for high side W-phase
High-side control supply
P
5
32
7
VB (W)
IN (HU)
IN (HV)
IN (HW)
IN(HU)
9
9
IN
V
B
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
26
28
30
32
36
Vcc OUT
U
GND
IN
Vs
V
B
30
V
CCH
COM
Common supply ground
IN(HV)
10
IN (LU)
IN (LV)
IN (LW)
Signal input for low side U-phase
Signal input for low side V-phase
Signal input for low side W-phase
Low-side control supply
Vcc OUT
V
GND
IN
Vs
V
B
28
V
CCL
IN(HW)
V
CCH
11
12
13
VFO
IS
Fault output
Vcc OUT
Over current sensing voltage input
Common supply ground
COM
W
COM
TEMP
N (W)
N (V)
N (U)
W
GND
Vs
26
T
e
mperature sensor output
IN(LU)
IN(LV)
IN(LW)
V
CCL
14
15
16
17
18
19
20
21
U
IN
Negative bus voltage input for W-phase
Negative bus voltage input for V-phase
Negative bus voltage input for U-phase
Motor W-phase output
U
OUT
V
IN
N(U)
24
23
W
IN
V
OUT
Vcc
Fo
V
Motor V-phase output
VFO
N(V)
N(W)
U
Motor U-phase output
IS
P
Positive bus voltage input
IS
W
OUT
NC
No Connection
COM
TEMP
GND
TEMP
22
1694b
MARCH 2016
1
6MBP15XSF060-50
IGBT Modules
j
CC
Absolute Maximum Ratings at T =25°C, V
=15V (unless
otherwise specified)
Items
DC Bus Voltage
Symbol
Characteristics
Unit
Remarks
Note *1
Note *1
V
V
V
DC
450
500
600
15
V
V
V
A
Bus Voltage (Surge)
Collector-Emitter Voltage
Collector Current
DC(Surge)
CES
I
C@25
Note *2
V
CC
≧
15
V
, V
B
(*)
≧
15V
30
20
A
A
Note *2, *3, *4
Peak Collector Current
I
CP@25
V
CC
≧
13
V
, V
(
*)
≧
13V
B
Note *2, *3, *4
Diode Forward current
I
F@25
15
30
A
A
Note *2
Peak Diode Forward current
Collector Power Dissipation
FWD Power Dissipation
Junction Temperature
I
FP@25
Note *2
P
D_IGBT
D_FWD
32.5
25.5
150
W
W
°C
°C
V
per single IGBT T
C
=25°C
P
per single FWD T
C
=25°C
T
j
Operating Junction Temperature
High-side Supply Voltage
Low-side Supply Voltage
T
jOP
-40 ~ +150
V
CCH
CCL
-0.5 ~ 20
-0.5 ~ 20
Applied between V
CC
H
-COM
Applied between V
CCL
-COM
V
V
V
V
V
VB(U)-COM
VB(V)-COM
VB(W)-COM
Applied between
VB(U)-COM, VB(V)-COM,
VB(W)-COM
High-side Bias Absolute Voltage
-0.5 ~ 620
-0.5 ~ 20
-5 ~ 600
V
V
V
B(U)
V
B(V)
V
B(W)
High-side Bias Voltage for
IGBT gate driving
Note *4
V
V
V
U
Applied between
U-COM, V-COM, W-COM
Note *5
High-side Bias offset Voltage
Input Signal Voltage
V
V
V
W
-0.5 ~ V
CCH
+0.5
-0.5 ~ V
CC
L
+0.5
V
IN
Note *6
Input Signal Current
Fault Signal Voltage
I
IN
3
mA
V
sink current
V
FO
-0.5 ~ V
CC
L
+0.5
1
Applied between VFO-COM
sink current
Fault Signal Current
I
FO
mA
V
Over Current sensing Input Voltage
Junction Temperature
Operating Case Temperature
Storage Temperature
V
IS
-0.5 ~ V
CC
L
+0.5
150
Applied between IS-COM
T
T
T
j
°C
C
-40 ~ +125
-40 ~ +125
AC 1500
°C
See Fig.1-1
stg
°C
Isolation Voltage
V
iso
Vrms
Sine wave, 60Hz t=1min, Note *7
Note *1 : Applied between P-N(U), P-N(V), P-N(W)
Note *2 : Pulse width and duty were limited by T
Note *3 : V
CC
is applied between V
CCH
-COM, V
CCL
-COM.
Note *4 : V (*) is applied between VB(U)-U, VB(V)-V, VB(W)-W.
j
max.
B
Note *5 : Over 13.0V applied between VB(U)-U, VB(V)-V, VB(W)-W. This IPM module might make incorrect response if the high-side bias offset voltage is less than
-5
V
.
Note *6 : Applied between IN(HU)-COM, IN(HV)-COM, IN(HW)-COM, IN(LU)-COM, IN(LV)-COM, IN(LW)-COM.
Note *7 : Applied between shorted all terminal and IMS (Insulated Metal Substrate).
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6MBP15XSF060-50
IGBT Modules
Electrical Characteristics
j
Inverter block (T =25°C unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
max.
1
Unit
mA
mA
T
j
j
=25°C
–
–
–
–
Zero gate Voltage
Collector current
V
V
CE
=600V
IN
=0V
I
CES
T
=125°C
10
I =1.5A
C
–
–
–
0.90
1.60
1.75
1.10
1.90
2.10
T
j
=25°C
V
V
V
CC
=+15V
Collector-Emitter
saturation Voltage
B
(*)=+15V
I
C
=15A
V
CE(sat)
V
V
IN
=5V
T
j
=125°C
Note *4
I
C
=15A
T
T
T
j
=125°C
=25°C
j
j
–
1.60
1.50
0.90
0.75
0.15
0.35
0.90
0.80
0.10
0.15
0.20
1.90
I =15A
F
FWD Forward voltage drop
V
F
V
IN
=0V
=125°C
–
–
Turn-on time
t
t
t
t
t
t
t
t
t
on
0.55
1.30
Turn-on delay
d(on)
–
–
–
–
–
–
–
–
–
V
DC
=300V
=15A
Turn-on rise time
r
–
I
C
V
V
CC
=15V
VCE-IC Cross time of turn-on
Turn-off time
c(on)
off
0.60
B
(*)=15V
1.30
µs
T
j
=125°C
Turn-off delay
d(off)
f
–
V
IN
=0V <-> 5V
See Fig.2-1
Note *4
Turn-off fall time
–
0.30
–
VCE-IC Cross time of turn-on
FWD Reverse Recovery time
c(off)
rr
1694b
MARCH 2016
3
6MBP15XSF060-50
IGBT Modules
j
Control circuit block (T =25°C unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
0.6
max.
0.9
Unit
V
CCL
=15V
V
CCL
=15V
V
CCH
=15V
V
CCH
=15V
V
V
V
V
IN
=5V
IN
=0V
IN
=5V
IN
=0V
–
–
–
–
Circuit current of Low-side
I
I
CCL
mA
0.6
0.9
1.25
1.25
1.9
Circuit current of High-side
CCH
mA
mA
1.9
V
B
V
B
V
B
(U)=15
V
,
(V)=15
V
,
(W)=15V
V
IN
=5V
IN
=0V
–
–
–
–
0.20
0.20
Circuit current of Bootstrap circuit (per one uint)
I
CCHB
V
Vth
(on)
–
2.1
1.3
2.6
V
V
V
Input Signal threshold voltage
Note *8
Pw≥0.9µs
Vth
(off)
Vth
(hys)
0.8
0.35
–
–
Input Signal threshold hysteresis voltage
Operational input pulse width of turn-on
0.80
V
IN
=0V to 5V rise up,
Note *6, Note *8
IN
=5V to 0V fall down
Note *6, Note *8
IN
=5
V
,
N
ote *6
Note *6
IS
=0
V
,
V
FO terminal pull up to 5V by
10kΩ
t
IN(ON)
0.5
0.7
–
–
–
–
µs
µs
V
Operational input pulse width of turn-off
t
I
IN(OFF)
IN
Input current
V
0.7
3.3
1.0
5.0
1.5
7.2
mA
kΩ
Input pull-down resistance
R
IN
V
V
FO(H)
FO(L)
4.9
–
–
V
Fault Output Voltage
V
V
IS
=1
V
,
I
FO
=1mA
–
–
–
0.95
–
V
Fault Output pulse width
t
FO
Note *9, See Fig.2-2, 2-3
20
µs
V
CC
=15V
Over Current Protection Voltage Level
V
IS(ref)
0.455
0.3
0.48
0.8
0.505
1.3
V
Note *3, *10
See Fig.2-2
Over Current Protection Delay time
Output Voltage of temperature sensor
td
(IS)
µs
T
C
C
=90°C
=25°C
2.63
0.88
136
4
2.77
2.91
1.39
150
20
V
V
V
(temp)
Note *11
T
1.13
LVIC Overheating protection
T
OH
OH(hys)
143
°C
°C
V
See Fig.2-6
T
OH
Hysteresis
T
10
Vcc Under Voltage Trip Level of Low-side
Vcc Under Voltage Reset Level of Low-side
Vcc Under Voltage hysteresis
V
V
V
V
V
V
V
V
V
CCL(OFF)
CCL(ON)
CCL(hys)
CCH(OFF)
CCH(ON)
CCH(hys)
B(OFF)
10.3
10.8
–
–
12.5
13.0
–
T
j
<150°C
–
0.5
–
V
See Fig.2-3
V
Vcc Under Voltage Trip Level of High-side
Vcc Under Voltage Reset Level of High-side
Vcc Under Voltage hysteresis
8.3
8.8
–
10.3
10.8
–
V
T
j
<150°C
–
V
See Fig.2-4
0.5
–
V
VB Under Voltage Trip Level
10.0
10.5
–
12.0
12.5
–
V
T
j
<150°C
VB Under Voltage Reset Level
VB Under Voltage hysteresis
B(ON)
–
V
See Fig.2-5
B(hys)
0.5
V
T
=
25°C
j
V
F(BSD)
F(BSD)
0.90
2.3
1.4
4.3
1.90
6.3
I
F(BSD)
=10mA
Forward voltage of Bootstrap diode
V
T
=
25°C
j
V
I
F(BSD)
=100mA
Note *8 : This IPM module might make incorrect response if the input signal pulse width is less than t
IN(on)
and t
IN(off)
.
Note *9: Fault signal is asserted corresponding to an “Over-current protection”, an “Under-voltage protection” at low-side, and an “Over-heat protection”.
Under the condition of “Over-current protection” or “Under-voltage protection” or “Over-heat protection“, the fault signal is asserted continuously while
these conditions are continuing. However, the minimum fault output pulse width is minimum 20µsec even if very short failure condition (which is less than
20µs) is triggered.
Note *10 : Over current protection is functioning only for the low-side arms.
Note *11 : Fig.1-1 shows the measurement position of temperature sensor.
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6MBP15XSF060-50
IGBT Modules
Thermal Characteristics
Description
Symbol
min.
typ.
max.
Unit
Junction to Case Thermal Resistance
(per single IGBT)
Note *12
R
R
th(j-c)_IGBT
–
–
3.85
°C/W
Junction to Case Thermal Resistance
(per single FWD)
th(j-c)_FWD
–
–
4.95
°C/W
Note *12
Note *12: Thermal compound with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of this device and heat-
sink.
Mechanical Characteristics
Description
Symbol
Conditions
min.
0.59
0
typ.
0.69
–
max.
0.98
100
–
Unit
Nm
µm
g
Tighten torque
Heat-sink side flatness
Weight
–
–
–
Mounting screw: M3
Note. *13
–
–
9.3
Note *13: Fig.1-2 shows the measurement position of heat sink flatness
Recommended Operation Conditions
All voltages are absolute voltages referenced to Vcc –potential unless otherwise specified.
Description
Conditions
min.
0
typ.
max.
400
18.5
16.5
16.5
1
Unit
V
DC Bus Voltage
V
V
V
V
DC
300
High-side Bias Voltage for IGBT gate driving
High-side Supply Voltage
Low-side Supply Voltage
B
(*)
13.0
13.5
13.5
-1
15.0
V
CCH
CCL
15.0
V
15.0
V
ΔV
B
–
–
–
–
–
–
–
–
–
–
–
Control Supply variation
V/µs
ΔV
CC
-1
1
Input signal voltage
V
V
V
IN
0
5
V
V
Voltage for current sensing
ISC
0
5
Potential difference of between COM to N (including surge)
Dead time for preventing arm-short (Tc≤125°C)
Allowable output current
(Note *14)
COM_N
-5
5
V
t
DEAD
1.0
–
–
µs
I
O
15.0
–
A rms
µs
PW
IN(on)
PW
IN(off)
0.5
0.7
–
Allowable minimum input pulse width
(Note *15, Note *16)
–
µs
PWM Input frequency
f
PWM
20
150
kHz
°C
Operating Junction Temperature
T
j (ope)
-30
Note *14 : V
DC
=300V, V
CCH
=V
CC
L
=V
B
(*)=15V, PF=0.8, Sinusoidal PWM, 3phase modulation,
T
≤
150°C ,Tc≤100°C , f
PWM
=5kHz, fo=200Hz, Ks=0.9
j
Note *15 : In the pulse width of 0.5us, the loss of IGBT increases for the saturation operation.
To reduce the loss of IGBT, please enlarge the pulse width more than the switching time of IGBT.
Note *16 : This IPM module might response according to input signal pulse even when the input signal pulse width is less than PW
IN(on)
and PW
IN(off)
.
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6MBP15XSF060-50
IGBT Modules
Package outline dimensions
Note 1:
The IMS(Insulated Metal Substrate) deliberately protruded from back surface of case.
※
It is improved of thermal conductivity between IMS and heat-sink.
Pin No.
Pin Name
VB(U)
Pin No.
14
Pin Name
IN(LU)
Pin No.
22
Pin Name
3
5
N(W)
N(V)
N(U)
W
VB(V)
15
IN(LV)
23
7
VB(W)
IN(HU)
IN(HV)
IN(HW)
16
IN(LW)
24
9
17
V
CCL
26
10
11
12
13
18
VFO
IS
28
V
19
30
U
V
CCH
20
COM
TEMP
32
P
COM
21
36
NC
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6MBP15XSF060-50
IGBT Modules
Marking
6MBP15XSF
Note : Product code A
Product code A
1
2
means current
atings , and
L” is marked.
means variatio
s , and “F” is marked.
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6MBP15XSF060-50
IGBT Modules
An example of application circuit.
Fig. shows an example of an application circuit.
Bootstrap negative electrodes
should be connected to U,V,W
terminals directly and separated
from the main output wires
ZD1
C4
ZD1
C4
ZD1
C4
VB(U)
C3
C3
C3
3
5
7
NC 36
Bus voltage
(positive)
VB(V)
VB(W)
P
32
3×HVIC
IN V
B
IN(HU)
IN(HV)
9
3×BSD
Vcc OUT
GND Vs
U
30
10
IN
V
B
6×IGBT 6×FWD
Vcc OUT
GND Vs
+5V
Bulk
capacitor
Vcc
V
28
M
C6
IN(HW)
V
CCH
11
12
13
IN
V
B
Vcc OUT
C1
COM
W
GND
LVIC
Vs
26
MPU
10k
Ω
IN(LU)
IN(LV)
IN(LW)
V
CCL
14
15
16
17
18
19
20
21
U
IN
U
OUT
R1
<C>
V
IN
N(U)
24
23
Ns
W
IN
Vcc
Fo
Bus voltage
(negative)
V
OUT
R1
C1
VFO
N(V)
<C>
<C>
C5 ZD2
15V
IS
IS
W
OUT
COM
TEMP
R1
GND
GND
N(W)
22
TEMP
<A>
R2
<B>
R2
<B>
COMP
Long wiring here might
cause short circuit failure
*Wiring Inductance should
be less than 10nH.
C2
C2
D1
D1
D1
OR
COMP
COMP
Long GND wiring here
might generate noise to
input and cause IGBT
malfunction.
R2
<B>
C2
Long wiring here might cause
OC level fluctuation and
malfunction.
Vref=V
IS(ref)
Note *1: Input signal for drive is High-Active. There is a pull-down resistor built in the IC input circuit.
T
o
p
revent malfunction, the wiring of each input should be as short
as possible. When using R-C coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
Note *2: By the function of the HVIC, it is possible of the direct coupling to microprocessor (MPU) without any photo-coupler or pulse-transformer isolation.
Note *3: VFO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kW.
Note *4:
T
o
p
revent erroneous protection, the wiring of (A), (B), (C) should be as short as possible.
Note *5: The time constant R2-C2 of the protection circuit should be selected approximately 1.5µs.
Over current (OC) shutdown time might vary due to the wiring pattern. Tight tolerance, temp-compensated type is recommended for R2, C2.
Note *6: Please set the threshold voltage of the comparator reference input to be same as the IPM OC trip reference voltage V
IS(ref)
Note *7: Please use high speed type comparator and logic IC to detect OC condition quickly.
.
Note *8: If negative voltage of R1 at the switching timing is applied, the schottky barrier diode D1 is recommended to be inserted parallel to R1.
Note *9: All capacitors should be mounted as close to the terminals of the IPM as possible. (C1, C4 : narrow temperature drift, higher frequency and DC bias
characteristic ceramic type are recommended, and C3, C5: narrow temperature drift, higher frequency and electrolytic type.)
Note *10:
T
o
p
revent surge destruction, the wiring between the snubber capacitor and the P terminal ,Ns node should be as short as possible. Generally a 0.1µ to 0.22µF
snubber capacitor (C6) between the P terminal and Ns node is recommended.
Note *11: Two COM terminals (13 & 20 pin) are connected inside the IPM, it
must be connected either one to the signal GND outside and leave another one open.
Note *12: It is recommended to insert a zener-diode (22V) between each pair of control supply terminals to prevent surge destruction.
Note *13: If signal GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect signal GND and
power GND at only a point.
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6MBP15XSF060-50
IGBT Modules
Fig.1-1: The measurement position of temperature sensor.
Fig.1-2: The measurement position of heat sink flatness
Temperature sensor position
Approx. 7.0
Measurement position
–
+
Approx. 6.3
+
–
Heat sink side
Tc measurement position
TOP VIEW
SIDE VIEW
Fig.2-1: Switching waveforms
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<3> UV is reset after t
FO
when V
CCL
exceeds V
CCL(ON)
and the fault output V
And the LVIC starts to operate, then next input is activated.
FO is reset simultaneously.
<4> When the voltage drop time is more than t
FO
, the fault output
condition during the same time.
pulse width is generated and all lower side IGBTs are OFF state in spite of input signal
6MBP15XSF060-50
IGBT Modules
Fig.2-2: Operation sequence of Over current protection
OC detected
t1: IS input voltage does not exceed V
IS
(ref), while the collector current of the lower side IGBT is under the normal operation.
t2: When IS input voltage exceeds V
IS
(ref), the OC is detected.
t3: The fault output VFO is activated and all lower side IGBT shut down simultaneously after the over current protection delay time td
(IS)
. Inherently there is
dead time of LVIC in td
(IS)
.
t4: After the fault output pulse width tFO, the OC is reset. Then next input signal is activated.
Fig.2-3: Operation sequence of V
CCL
Under voltage trip (lower side arm)
UV detected
UV detected
UV detected
Operation sequence of V
CCL
Under Voltage protection (lower side arm)
When V
CCL
is under 4V, UV and fault output are not activated.
<1> When V
CCL
is under V
CCL(ON)
, all lower side IGBTs are OFF state.
After V
CCL
rises V
CCL(ON)
, the fault output V
FO is released (high level).
And the LVIC starts to operate, then next input is activated.
<2> The fault output V
FO is activated when V
CCL
falls below V
CCL(OFF)
, and all lower side IGBT remains OFF state.
When the voltage drop time is less than 20µs, the fault output
of input signal condition during that time.
pulse width is generated minimum 20µs and all lower side IGBTs are OFF state in spite
1694b
MARCH 2016
10
After V
CCH
exceeds V
CCH(ON)
, the HVI
The fault output V
C starts to operate. Then next input is activated.
FO is constant (high level) not to depend on V
CCH
.
6MBP15XSF060-50
IGBT Modules
Fig.2-4: Operation sequence of V
CCH
Under voltage trip (upper side arm)
UV detected
UV detected
High-level
(no fault output)
Operation sequence of V
CCH
Under Voltage protection (upper side arm)
<1> When V
CCH
is under V
CCH(ON)
, the upper side IGBT is OFF state.
<2> After V
CCH
falls below V
CCH(OFF)
, the upper side IGBT remains OFF state.
But the fault output VFO keeps high level.
<3> The HVIC starts to operate after UV is reset, then next input is activated.
Fig.2-5: Operation sequence of VB Under voltage trip (upper side arm)
UV detected
UV detected
Upper side IGBT
Collector Current
UV detected
High-level
(no fault output)
<1> When VB(*) is under V
B(ON)
, the upper side IGBT is OFF state.
After VB(*) exceeds V
B(ON)
, the HVIC starts to operate. Then next input is activated.
The fault output VFO is constant (high level) not to depend on VB(*). (Note*14)
<2> After VB(*) falls below V
B(OFF)
, the upper side IGBT remains OFF state.
But the fault output VFO keeps high level.
<3> The HVIC starts to operate after UV is reset, then next input is activated.
Note *14: The fault output is not given HVIC bias conditions.
1694b
MARCH 2016
11
6MBP15XSF060-50
IGBT Modules
Fig.2-6: Overheat protection
This function is applied to “6MBP**VXF060-50”.
The IPM has the over-heating protection (OH) function by monitoring the LVIC temperature.
The T
OH
sensor position is shown in Fig.1-1.
<1> The collector current of the lower side IGBT is under the normal operation while the LVIC temperature does not exceed T
OH
<2> The IPM shutdown all lower side IGB
T
s
w
hile the LVIC temperature exceeds T
OH
<3> The TEMP terminal continue to output the voltage which correspond to temperature of LVIC even if IPM is in OH condition.
.
.
<4> The fault status is reset when the LVIC temperature drops below (T
OH
-T
OH
(hys)). The all lower side IGB
T
s
r
estarted to normal operation.
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2016.
The contents are subject to change without notice for specification changes or other reasons.
When using a product listed in this Catalog, be sure to
obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji’s products for your reference only.
No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted.
Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other’s
intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty.
When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment
from causing a physical injury, fire, or other problem if any of the products become faulty.
It is recommended to make your design fail-safe, flame
retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• Machine tools
• OA equipment
• Audiovisual equipment
• Communications equipment (terminal devices)
• Electrical home appliances
• Personal equipment
•
Measurement equipment
• Industrial robots
etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval.
When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Trunk communications equipment
• Gas leakage detectors with an auto-shut-off feature
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2016 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set
forth herein.
12
Technical Information
IGBT Modules
Please refer to URLs below for futher information about products, application manuals and technical documents.
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产品更改和停产信息
2015-10
