FUXINSEMI-2N5551
| Part # | FUXINSEMI-2N5551 |
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2N5551
TRANSISTOR (NPN)
TO – 92
FEATURES
General Purpose Switching Application
1. EMITTER
2. BASE
ꢀ
3. COLLECTOR
Equivalent Circuit
ꢀꢁꢂꢃꢄꢅꢆ
ꢅꢍꢎꢎꢎꢏꢑ&ꢌ”ꢒ!ꢌꢀ!ꢓꢔꢌꢀ
2 N
%%%ꢀ&ꢁꢂꢃ
ꢇ ꢇ ꢇ ꢈ
ꢉ ꢉ ꢉ
1
E
B
C
ORDERING INFORMATIO
N
ꢀ
Part Number
Package
ꢀꢁꢂꢃꢄꢅꢀ
ꢀꢁꢂꢃꢄꢅꢀ
Packing Method
ꢆꢇꢈꢉꢀ
Pack Quantity
ꢅꢍꢎꢎꢎꢏ
1000pcs/Bag
ꢃꢁꢐ
ꢅꢍꢎꢎꢎꢏ
ꢁ
ꢊ
ꢋꢌꢀ
ꢀ
2000pcs/Box
MAXIMUM RATINGS (T
a
=25
ꢀ
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
180
Unit
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
160
6
V
A
Collector Current
0.6
mW
625
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
R
%
JA
T
j
200
ꢀ
/
W
ꢀ
150
T
stg
Storage
T
e
mperature
-55~+150
ꢀ
ꢀ
Page 1
Ver2.1
2N5551
TRANSISTOR (NPN)
T =25
unless otherwise specified
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
ꢀ
a
Parameter
Symbol
Test
conditions
Min
180
160
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100μA,I
E
=0
*
V
(BR)CEO
I
C
=1
m
A,I
B
=0
V
V
(BR)EBO
I
CBO
I
E
=10μA,I
C
=0
V
V
CB
=120
V
,
I
E
=0
50
50
nA
nA
Emitter cut-off current
I
EBO
V
EB
=4
V
,
I
C
=0
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
CE
=5
V
,
I
C
=1
m
A
V
CE
=5
V
, I
C
=10
m
A
V
CE
=5
V
,
I
C
=50
m
A
I
C
=10
m
A,I
B
=1
m
A
I
C
=50
m
A,I
B
=5
m
A
I
C
=10
m
A,I
B
=1
m
A
I
C
=50
m
A,I
B
=5
m
A
V
CB
=10
V
,
I
E
=0, f=1MHz
V
BE
=0
.
5
V
,
I
C
=0, f=1MHz
V
CE
=10V,I
C
=10
m
A, f=100MHz
80
100
50
DC current gain
300
0
.
15
0
.
2
1
V
V
˄
˅
˅
1
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
˄
V
BE (sat)
V
˄
˅
1
V
BE (sat)
1
V
˄
˅
2
6
pF
pF
MHz
Collector output capacitance
Emitter input capacitance
Transition frequency
C
o
b
20
300
C
ib
f
T
100
*Pu
l
s
e
t
e
st: pu
l
s
e w
idth
ꢀ
300
ꢁ
s, duty
c
y
cle
ꢀ
2
.
0%
.
CLASSIFICATION OF h
FE(2)
A
B
C
RANK
100
–
150
150
–
200
200
–
300
RANGE
Page 2
Ver2.1
2N5551
TRANSISTOR (NPN)
Typical Characteristics
I
C
h
FE
——
Static Characteristic
18
500
90uA
COMMON EMITTER
V
CE
=5V
COMMON
EMITTER
T
a
=25
ć
T
a
=100
ć
80uA
70uA
15
12
9
T
a
=25
ć
60uA
50uA
40uA
30uA
I
B
=20uA
100
6
3
0
10
0
2
4
6
8
10
12
1
10
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
V
CEsat
—— I
C
1.0
0.8
0.6
0.4
0.2
0.3
ꢀ=10
ꢀ=10
0.1
T
a
=25
ć
T
a
=100
ć
T
a
=100
ć
T
a
=25
ć
0.01
100
0.1
1
10
100
1
10
100
200
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
V
BE
—— I
C
V
CB
/
V
EB
C
ob
/ C
ib
——
200
COMMON EMITTER
CE
=5V
f=1MHz
V
I
E
=0 / I
C
=0
100
10
1
T
a
=25
ć
C
ib
T
a
=100
ć
T
a
=25
ć
10
C
ob
1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
I
C
f
T
——
P
C
—— T
a
750
150
100
V
CE
=10V
T
a
=25
ć
625
500
375
250
125
0
50
1
10
COLLECTOR CURRENT
I
C
(mA)
20
30
0
25
50
75
100
125
150
3
AMBIENT TEMPERATURE
T
a
(
ć
)
Page 3
Ver2.1
2N5551
TRANSISTOR (NPN)
TO-92
Package Outline Dimensions
Dimensions In Millimeters
Symbol
Min
Max
A
b
c
D
D1
E
3.100
0.340
0.300
4.
100
3.700
4.300
3.800
0.550
0.510
4.900
4.800
4.800
e
1.270 T
Y
P
e1
L
2.440
13.100
2.640
14.500
TO-92
Suggested Pad Layout
Page 4
Ver2.1
