FUXINSEMI-BT132G
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BT132G
Series
2.0A 4Quadrants TRIACs
Product Summary
Symbol
I
T(RMS)
Value
2.0
Unit
A
V
DRM
V
RRM
V
TM
600/800
1.55
V
V
Feature
Application
With high ability to withstand the shock loading of
large current,With high commutation performances,
4 quadrants products especially recommended for
use on inductive load.
Washing machine, vacuums, massager, solid state
relay, AC
Motor speed regulation and so on.
Package
Circuit diagram
TO-92
Marking
BT132
XXXX
Page 1
Ver2.1
BT132G
Series
2.0A 4Quadrants TRIACs
Absolute maximum ratings (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Repetitive peak off-state voltage
Repetitive peak reverse voltage
V
DRM
V
RRM
I
T(RMS)
600/800
600/800
2
V
V
A
RMS on-state current
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
I
2
t
16
A
I
2
t value for fusing (tp=10ms)
2.6
A
2
s
Ⅰ
–
Ⅱ
–
Ⅲ
50
10
Critical rate of rise of on-state current (I
G
=2
×
I
GT
)
dI/dt
A/μs
Ⅳ
Peak gate current
I
GM
P
G(
A
V)
T
J
1
A
Average gate power dissipation
Junction
T
emperature
Storage
T
emperature
0.5
W
℃
℃
-40 ~ +125
-40 ~ +150
T
STG
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Condition
Value
Unit
Ⅰ
–
Ⅱ
–
Ⅲ
5
Gate trigger current
I
GT
MAX.
mA
V
D
=12V I
T
= 0.1A
Ⅳ
10
T
j
=25
℃
Gate trigger voltage
V
GT
V
GD
Ⅰ
–
Ⅱ
–
Ⅲ
–
Ⅳ
MAX.
MIN.
1.3
0.2
15
20
10
V
V
Gate non-trigger voltage
V
D
=V
DRM
T
j
=125
℃
Ⅰ
–
Ⅲ
–
Ⅳ
Ⅱ
latching current
I
L
MAX.
mA
V
D
=12V I
GT
= 0.1A
T
j
=25
℃
Holding current
I
H
Ⅰ
–
Ⅱ
–
Ⅲ
–
Ⅳ
MAX.
MIN.
mA
Critical-rate of rise
dV/dt
V
D
=2/3V
DRM
Gate Open T
j
=125
℃
20
V/μs
of commutation voltage
STATIC CHARACTERISTICS
Forward “on” voltage
V
TM
I
DRM
I
RRM
I
TM
=3A tp=380μs
MAX.
MAX.
MAX.
1.55
5
V
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
THERMAL RESISTANCES
T
j
=25
℃
V
D
=V
DRM
V
R
=V
RRM
T
j
=125
℃
μA
μA
200
Rth(j-c) Junction
to case(AC)
Rth(j-a) Junction
to ambient
TY
P
.
TY
P
.
60
℃
/W
℃
/W
Thermal resistance
150
Page 2
Ver2.1
BT132G
Series
2.0A 4Quadrants TRIACs
Typical Characteristics
FIG.1: Maximum power dissipation versus RMS
on-state current (full cycle)
FIG.2: RMS on-state current versus case temperature
(full cycle)
3.5
3.0
2.4
2.0
1.6
1.2
2.0
1.0
0
0.8
0.4
I
(A)
T(RMS)
0
-50
0
0.4
0.8
1.2
1.6
2.0
0
50
100
150
Tc
)
FIG.3: Surge peak on-state current versus number of cycles
FIG.4: On-state characteristics (maximum values)
10
7.5
5.0
2.5
0
2
0
T
j
=125ºC
16
12
8
T
j
=25ºC
4
0
0.5
1.5
2.5
3.5
(V)
0
10
1000
100
Number of cycles
V
TM
FIG.6: Relative variations of gate trigger current, holding
current and latching current versus junction
temperature (typical values)
FIG.5: Non-repetitive surge peak on-state current for
a sinusoidal pulse with width tp < 10ms
1000
2.5
2.0
1.5
I
GT
I
H
I
T
100
1.0
0.5
0.0
10
0.01
0.1
1
10
-40
-20
0
20
40
60
80
100
120
140
Tj
)
tp(ms)
Page 3
Ver2.1
BT132G
Series
2.0A 4Quadrants TRIACs
Ordering Information
_
BT 132
G
600
Triacs
I
T(RMS)
: 2A
G:TO-92
600:V
DRM
/V
RRM
≥
600V
800:V
DRM
/V
RRM
≥
800V
TO-92 Package Information
Page 4
Ver2.1
