FUXINSEMI-BT138D-800E

Part #FUXINSEMI-BT138D-800E
Download 
FUXINSEMI-BT138D-800E
BT138D Series  
12A 4Quadrants TRIACs  
Product Summary  
Symbol  
I

T(RMS)  

Value  
12  
Unit  
A
V

DRM

V

RRM  

V

TM  

600 / 800  
1.55  
V
V
Feature  
Application  
With high ability to withstand the shock loading of  
large current,With high commutation performances,  
4 quadrants products especially recommended for  
use on inductive load.  
Washing machine, vacuums, massager, solid state  
relay, AC
 
Motor speed regulation and so on.  
Package  
Circuit diagram  
TO-252AB  
Marking  
BT138  
800E  
XXXX  
Page 1  
Ver2.1  

BT138D Series  
12A 4Quadrants TRIACs  
Absolute maximum ratings (Ta=25
℃
unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
V

DRM  

V

RRM  

I

T(RMS)  

600 / 800  
600 / 800  
12  
V
V
A
RMS on-state current  
Non repetitive surge peak on-state current  
(full cycle, F=50Hz)  
I

TSM  

I

2

t  
95  
45  
A
I

2

t value for fusing (tp=10ms)  
A

2

s  
Ⅰ
–
Ⅱ
–
Ⅲ  
50  
10  
Critical rate of rise of on-state current (I

G

=2
×
I

GT  

)
dI

T

/dt  
A/μs  
Ⅳ
Peak gate current  
I

GM  

P

G(
A
V)  

T

J  

2
A
Average gate power dissipation  
Junction
T
emperature  
Storage
T
emperature  
0.5  
W
℃
℃
-40 ~ +125  
-40 ~ +150  
T

STG  

Electrical characteristics (T

A

=25

o

C, unless otherwise noted)  
Parameter  
Symbol  
Test Condition  
Value  
Unit  
Ⅰ
–
Ⅱ
–
Ⅲ  
10  
25  
Gate trigger current  
I

GT  

MAX.  
mA  
V

D

=12V I

T

= 0.1A  
Ⅳ
T

j

=25
℃  
Gate trigger voltage  
V

GT  

V

GD  

Ⅰ
–
Ⅱ
–
Ⅲ
–
Ⅳ  
MAX.  
MIN.  
1.3  
0.2  
30  
40  
30  
V
V
Gate non-trigger voltage  
V

D

=V

DRM

T

j

=125
℃  
Ⅰ
–
Ⅲ
–
Ⅳ  
Ⅱ
latching current  
I

L  

MAX.  
mA  
V

D

=12V I

GT

= 0.1A  
T

j

=25
℃  
Holding current  
I

H  

Ⅰ
–
Ⅱ
–
Ⅲ
–
Ⅳ  
MAX.  
MIN.  
mA  
Critical-rate of rise  
dV

D

/dt  
V

D

=2/3V

DRM

Gate Open T

j

=125
℃  
20  
V/μs  
of commutation voltage  
STATIC CHARACTERISTICS  
Forward “on” voltage  
V

TM  

I

DRM  

I

RRM  

I

TM

=15A tp=380μs  
MAX.  
MAX.  
MAX.  
1.55  
10  
1
V
Repetitive Peak Off-State Current  
Repetitive Peak Reverse Current  
THERMAL RESISTANCES  
T

j

=25
℃  
V

D

=V

DRM

V

R

=V

RRM  

T

j

=125
℃  
μA  
mA  
Rth(j-c) Junction
 
to case(AC)  
Rth(j-a) Junction
 
to ambient  
TY
P
.  
TY
P
.  
1.4  
70  
℃
/W  
℃
/W  
Thermal resistance  
Page 2  
Ver2.1  

BT138D Series  
12A 4Quadrants TRIACs  
Typical Characteristics  
FIG.1: Maximum power dissipation versus RMS  
on-state current (full cycle)  
FIG.2: RMS on-state current versus case temperature  
(full cycle)  
20  
15  
10  
5
14  
12  
10  
8
6
4
2
0
0
-50 -25  
0
25  
50  
100 125 150  
0
2
4
6
8
10  
12  
(A)  
I
T(RMS)  
Tc  
)
FIG.4: On-state characteristics (maximum values)  
FIG.3: Surge peak on-state current versus number of cycles  
100  
80  
60  
40  
20  
0
40  
35  
30  
25  
20  
15  
10  
5
T =125ºC  
j
T =25ºC  
j
0
1
10  
100  
1000  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Number of cycles  
V
(V)  
TM  
FIG.5: Non-repetitive surge peak on-state current for  
a sinusoidal pulse with width tp < 10ms  
FIG.6: Relative variations of gate trigger current, holding  
current and latching current versus junction  
temperature (typical values)  
1000  
100  
10  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I

GT  

I

H  

I

L  

-40 -20  
0
20  
40  
60  
80 100
 
120 140  
Tj  
0.01  
0.1  
1
10  
tp(ms)  
)
Page 3  
Ver2.1  

BT138D Series  
12A 4Quadrants TRIACs  
Ordering Information  
_
BT 138
 
D  
600 E  
Triacs  
E:I

GT1-3

≤10mA I

GT4

≤25mA  
I

T(RMS)

: 12A  
600:V

DRM

/V

RRM

≥
600V  
800:V

DRM

/V

RRM

≥
800V  
D:TO-252AB  
TO-252AB Package Information  
Page 4  
Ver2.1