FUXINSEMI-FD965S

Part #	FUXINSEMI-FD965S
Download	FUXINSEMI-FD965S

FD965S

TRANSISTOR (NPN)

FEATURES

SOT-23

z

z

z

Low Collector-Emitter Saturation Voltage

Large Collector Power Dissipation and Current

Mini Power Type Package

3

2

1

1. BASE

MARKING

: 965

2.EMITTER

3.COLLECTOR

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

Parameter

Collector-Base Voltage

Value

Unit

V

40

Collector-Emitter Voltage

Emitter-Base Voltage

20

7

V

V

Collector Current

5

A

P

C

Collector Power Dissipation

Thermal Resistance From Junction

T

o

A

mbient

Junction

T

e

mperature

750

mW

℃

/

W

℃

R

θ

JA

T

j

167

-55~+150

-55~+150

T

stg

Storage

T

e

mperature

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)

Parameter

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

Test conditions

I

C

=100µA,I

E

=0

Min

40

20

7

Typ

Max

Unit

V

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I

C

=1mA,I

B

=0

V

I

E

=10µA,I

C

=0

V

V

CB

=30V,I

E

=0

0.1

0.1

µA

µA

Emitter cut-off current

I

EBO

V

EB

=7

V

,

I

C

=0

h

FE(1)

h

FE(2)

h

FE(3)

V

CE(sat)

f

T

V

CE

=2

V

,

I

C

=1mA

V

CE

=2

V

,

I

C

=500mA

V

CE

=2

V

,

I

C

=5A

200

150

DC current gain

500

150

1000

1

Collector-emitter saturation voltage

Transition frequency

I

C

=3A,I

B

=0.1A

V

VCE=6V,IC=50mA

，

f=200MHz

V

CB

=20

V

,

I

E

=0, f=1MHz

MHz

pF

Collector output capacitance

C

ob

50

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Page 1

Ver2.1

FD965S

TRANSISTOR (NPN)

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢅꢊꢅꢄꢋꢌꢊꢃꢍꢋꢃꢄꢍ

h

FE

——

I

C

Static Characteristic

900

800

700

600

500

400

300

200

100

0

1000

COMMON

EMITTER

T

a

=25

℃

1.8mA

T

a

=100

o

C

1.6mA

1.4mA

1.2mA

T

a

=25

o

C

1mA

0.8mA

0.6mA

0.4mA

I

B

=0.2mA

18

V

CE

=2V

100

0

2

4

6

8

10

12

14

16

20

0.6

1

10

100

1000

5000

5000

20

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

V

CEsat

——

V

BEsat

——

I

C

I

C

1

2000

1000

T

a

=25

℃

0.1

T

a

=100

℃

T

a

=100

℃

T

a

=25

℃

β

=30

β

=30

100

0.3

0.01

500

1

10

100

1000

1

10

100

1000

5000

0.3

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

V

CB

/ V

EB

C

ob

/ C

ib

——

I

C

V

BE

——

5000

f=1MHz

I

E

=0/ I

C

=0

T

a

=25

o

1000

100

10

C

C

ib

T

a

=100

o

C

100

T

a

=25

℃

C

ob

1

V

CE

=2V

1000 1100 1200

0.1

100

10

0.1

200

300

400

500

600

700

800

900

1

10

REVERSE VOLTAGE

V

(V)

BASE-EMMITER VOLTAGE

V

BE

(mV)

P

c

—— T

a

f

T

——

I

C

500

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

100

V

CE

=6V

T

a

=25

o

C

10

10

100

2

0

25

50

75

100

125

150

AMBIENT TEMPERATURE

T

a

(

℃

)

COLLECTOR CURRENT

I

C

(mA)

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Page 2

Ver2.1

FD965S

TRANSISTOR (NPN)

SOT-23 Package Information

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min.

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

Max.

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Min.

Max.

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

c

D

E

E1

e

0.950 TYP.

0.550 REF.

0.037 TYP.

0.022 REF.

e1

L

1.800

0.300

2.000

0.500

0.071

0.012

0.079

0.020

L1

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Ver2.1

Page 3