FUXINSEMI-FS13001
| Part # | FUXINSEMI-FS13001 |
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FS13001
TRANSISTOR (NPN)
TO – 92
FEATURE
power switching applications
z
1. EMITTER
2. COLLECT
OR
3. BASE
Equivalent Circuit
ꢀꢁꢂꢃꢄꢅꢆ
13001
13001
,!ꢂ-ꢃꢄꢂꢅꢄꢁ.ꢂꢅ
S 8D
S 8D
,ꢀꢁ.ꢂ
ꢀ
1
E
C B
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
600
Unit
V
V
Collector -Base Voltage
Collector-Emitter Voltage
4
2
0
7
V
Emitter-Base Voltage
Collector Current -Continuous
0.2
A
P
C
Collector Power Dissipation
Junction
T
e
mperature
Storage Temperature
0.75
150
W
℃
T
J
T
stg
-55
~
150
℃
Page 1
Ver2.2
FS13001
TRANSISTOR (NPN)
T =25
unless otherwise specified
ꢀꢁꢀꢂꢃꢄꢅꢂꢆꢁꢇꢂꢈꢆꢄꢆꢂꢃꢀꢄꢅꢉꢃꢅꢂꢉ
ꢀ
a
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= 100
μ
A , I
E
=0
I
C
= 1mA , I
B
=0
M
in
600
400
7
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
I
E
= 100
μ
A, I
C
=0
V
V
CB
= 600V , I
E
=0
V
CE
= 400
V
,
I
B
=0
100
200
100
30
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
V
EB
=7
V
,
I
C
=0
h
FE(1)
V
CE
= 20
V
,
I
C
= 20mA
V
CE
= 10
V
,
I
C
= 0.25 mA
I
C
= 50mA, I
B
= 10 mA
I
C
= 50 mA, I
B
= 10mA
1
4
DC current gain
h
FE(2)
5
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.5
1.2
V
V
V
CE
= 20
V
,
I
C
=20mA
f = 1MHz
Transition frequency
f
T
8
MHz
Fall time
t
f
0.3
1.5
μ
s
μ
s
I
C
=50mA,
I
B1
=-I
B2
=5mA,
V
CC
=45V
Storage time
t
S
Page 2
Ver2.2
FS13001
TRANSISTOR (NPN)
TO-92
Package Outline Dimensions
Dimensions In Millimeters
Symbol
Min
Max
A
b
c
D
D1
E
3.100
0.340
0.300
4.
100
3.700
4.300
3.800
0.550
0.510
4.900
4.800
4.800
e
1.270 T
Y
P
e1
L
2.440
13.100
2.640
14.500
TO-92
Suggested Pad Layout
Page 3
Ver2.2
