FUXINSEMI-FS2301

Part #	FUXINSEMI-FS2301
Download	FUXINSEMI-FS2301

FS2301

P-Channel SMD MOSFET

Product Summary

V

(BR)DSS

R

DS(on)MAX

I

D

120mΩ@-4.5V

180mΩ@-2.5V

-20V

-2.4A

Feature

Application





Advanced trench process technology

High density cell design for ultra low on-resistance





Load Switch for Portable Devices

DC/DC Converter

Package

Circuit diagram

D

S

G

SOT-23

Marking

A1SHB

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Page 1

Ver2.1

FS2301

P-Channel SMD MOSFET

Absolute maximum ratings (Ta=25

℃

unless otherwise noted)

Parameter

Symbol

V

DS

V

GS

I

D

Value

-20

Unit

V

Drain-Source Voltage

Gate-Source Voltage

±8

V

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

-2.4

A

I

DM

-10

A

P

D

1.2

W

℃

℃

Junction

T

emperature

Storage

T

emperature

T

J

-55 ~ +150

-55 ~ +150

T

STG

Electrical characteristics (T

A

=25

o

C, unless otherwise noted)

Parameter

Symbol

Test Condition

Min.

Typ. Max.

Unit

Static Characteristics

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate threshold voltage

V

(BR)DSS

V

GS

= 0V, I

D

=-250µA

-19

V

µA

nA

V

I

DSS

I

GSS

V

DS

=-16V,V

GS

= 0V

V

GS

=±8

V

, V

DS

= 0V

V

DS

=V

GS

, I

D

=-250µA

-1

±100

-1.5

V

GS(th)

-0.4

120

180

140

200

V

GS

=-4.5V, I

D

=-2.4A

Drain-source on-resistance

1)

R

DS(on)

mΩ

V

GS

=-2.5V, I

D

=-2.0A

Dynamic characteristics

2)

Input Capacitance

C

iss

C

oss

C

rss

Q

g

500

120

105

8.6

1.5

2.6

10

Output Capacitance

V

DS

=-10V,V

GS

=0V,f =1MHz

pF

nC

Reverse Transfer Capacitance

Total Gate Charge

V

DS

=-10

V

,

V

GS

=-4.5V,

I

D

=-2.8A

Gate-Source Charge

Gate-Drain Charge

Q

gs

Q

gd

t

d(on)

t

r

Turn-on delay time

Turn-on rise time

18

V

DD

=-10

V

,

V

GS

=-4.5V,I

D

=-1A,

R

GEN

=2.5Ω

nS

Turn-off delay time

t

d(off)

t

f

55

Turn-off fall time

52

Source-Drain Diode characteristics

Diode Forward Current

1)

Diode Forward voltage

I

S

-2.4

-1.2

A

V

V

DS

V

GS

=0V, I

S

=-2.4A

Notes:

1)

2)

Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.

Guaranteed by design, not subject to production testing.

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Page 2

Ver2.1

FS2301

P-Channel SMD MOSFET

Typical Characteristics

Output Characteristics

Transfer Characteristics

-20

-16

-12

-8

-18

-16

-14

-12

-10

-8

T

a

=25

℃

V

DS

=-3V

Pulsed

V

GS

=-4V,-5V,-6V

Pulsed

T

a

=25

℃

V

GS

=-3V

T

a

=100

℃

V

GS

=-2V

-6

-4

-4

V

GS

=-1.5V

-2

-0

-0

-0

-1

-2

-3

-4

-5

-0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

DRAIN TO SOURCE VOLTAGE

V

DS

(V)

GATE TO SOURCE VOLTAGE

V

GS

(V)

R

DS(ON)

V

GS

——

R

DS(ON)

I

D

——

150

120

90

300

200

100

0

T

a

=25

℃

Pulsed

Pulsed

I

D

=-2.6A

V

GS

=-2.5V

T

a

=100

℃

T

a

=25

℃

V

GS

=-4.5V

60

30

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-0

-1

-2

-3

-4

-5

DRAIN CURRENT

I

D

(A)

GATE TO SOURCE VOLTAGE

V

GS

(V)

Threshold Voltage

I

S

——

V

SD

-3

-1.0

-0.8

-0.6

-0.4

-0.2

Pulsed

-1

I

D

=-250uA

T

a

=100

℃

T

a

=25

℃

-0.1

-0.0

-0.4

-0.8

-1.2

-1.6

25

50

75

100

125

SOURCE TO DRAIN VOLTAGE

V

SD

(V)

JUNCTION TEMPERATURE

T

j

(

℃

)

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Page 3

Ver2.1

FS2301

P-Channel SMD MOSFET

SOT-23 Package Information

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min.

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

Max.

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Min.

Max.

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

c

D

E

E1

e

0.950 TYP.

0.550 REF.

0.037 TYP.

0.022 REF.

e1

L

1.800

0.300

2.000

0.500

0.071

0.012

0.079

0.020

L1

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Ver2.1

Page 4