FUXINSEMI-FT10050-12P
| Part # | FUXINSEMI-FT10050-12P |
Download  | FUXINSEMI-FT10050-12P |
FT10050 Series
100A 3Q TRIACs
Product Summary
Symbol
I
T(RMS)
Value
100
Unit
A
V
DRM
V
RRM
V
TM
1200 / 1600
1.55
V
V
Feature
Application
Glass Passivated Junctions
Static relays
High voltage and surge capability
Low Thermal Resistance and Durability
Triggering in three quadrants
Heating regulation
In-duction motor starting circuits
Phase control operation in light dimmers
Motor speed controllers
Package
Circuit diagram
1
2
3
TO-247PULS
Page 1
Ver2.1
FT10050 Series
100A 3Q TRIACs
Absolute maximum ratings (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Repetitive peak off-state voltage
Repetitive peak reverse voltage
RMS on-state current (TC=100
℃
)
V
DRM
V
RRM
I
T(RMS)
1200 / 1600
1200 / 1600
100
V
V
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
TSM
1000
A
I
2
t value for fusing (tp=10ms)
I
2
t
dI/dt
I
GM
5000
A
A/μs
A
Critical rate of rise of on-state current (I
G
=2
×
I
GT
)
100
Peak gate current
4
10
Peakgate power dissipation
Average gate power dissipation
Junction
T
emperature
P
G
W
P
G(
A
V)
T
J
2
W
-40 ~ +150
-40 ~ +150
℃
Storage
T
e
mperature
T
STG
℃
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Symbol
Test Condition
Quadrant
Value
Unit
Gate trigger current
Gate trigger voltage
Gate non-trigger voltage
I
GT
V
GT
V
GD
I-II-III
I-II-III
I-II-III
MAX.
MAX.
MIN.
50
1.3
0.2
mA
V
V
D
=12V, I
T
=0.1A,
T
j
=25
℃
V
D
=V
DRM
T
j
=125
℃
V
latching current
I
L
I
H
I
G
=1.2I
GT
I-II-III
MAX.
MAX.
MIN.
200
150
mA
mA
Holding current
I
T
=500mA
Critical-rate of rise
dV/dt
V
D
=2/3V
DRM
Gate Open T
j
=125
℃
1000
V/μs
of commutation voltage
STATIC CHARACTERISTICS
Forward “on” voltage
V
TM
I
DRM
I
RRM
I
TM
=150A tp=380μs
MAX.
MAX.
1.55
50
V
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
THERMAL RESISTANCES
T
j
=25
℃
μA
mA
V
D
=V
DRM
V
R
=V
RRM
T
j
=125
℃
MAX.
12
Thermal resistance
Rth(j-c) TO-247PULS
TY
P
.
0.45
℃
/W
Page 2
Ver2.1
FT10050 Series
100A 3Q TRIACs
Typical Characteristics
FIG.1 Maximum power dissipation
versus on-state current
FIG.2: on-state
current versus
case temperature
FIG.3: Surge peak on-state current
versus number of cycles
FIG.4: On-state characteristics
(maximum values)
FIG.5: Non-repetitive surge peak on-state
currentfor a sinusoidal pulse with width
FIG.6: Relative variations of gate
trigger current
holding current and
tp<10ms, and corresponding value of
ꢀ
latching current versus junction
I2 t (dI/dt < 50A/μs)
temperature
Page 3
Ver2.1
FT10050 Series
100A 3Q TRIACs
Ordering Information
_
F T
100 50
12 P
P: TO-247PULS
Fuxinsemi
T: 3Q Triacs
12:V
DRM
/V
RRM
≥12
00V
16:V
DRM
/V
RRM
≥1
600V
I
T(RMS)
: 100A
50:I
GT1-3
≤50mA
TO-247PULS Insulated Package Information
Page 4
Ver2.1
