FUXINSEMI-MMBTA92
| Part # | FUXINSEMI-MMBTA92 |
Download  | FUXINSEMI-MMBTA92 |
MMBTA92
FEATURES
High Collector Current
SOT-23
Complementary to MMBTA42
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
-300
Collector-Emitter Voltage
Emitter-Base Voltage
V
-300
-5
V
Collector Current
-0.2
A
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
m
perature
300
mW
℃
/W
℃
P
C
417
R
ΘJA
T
j
150
Storage
T
e
m
perature
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= -100
μ
A, I
E
=0
M
in
-300
-300
-5
M
ax
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
= -1mA, I
B
=0
V
V
I
E
= -100
μ
A, I
C
=0
V
CB
=-200
V
,
I
E
=0
-0.25
-0.1
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5
V
,
I
C
=0
h
FE(1)
V
CE
= -10
V
,
I
C
= -1mA
V
CE
= -10
V
,
I
C
=-10mA
V
CE
= -10
V
,
I
C
=-30mA
I
C
=-20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
60
100
60
DC current gain
h
FE(2)
200
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
-0.2
V
-0.9
V
V
CE
=-20
V
,
I
C
= -10mA
f=
30MHz
Transition frequency
50
MHz
f
T
Page 1
Ver2.1
MMBTA92
V
CE
h
FE
——
I
C
I
C
——
70
60
50
40
30
20
10
0
1000
100
10
-500uA
COMMON
EMITTER
T
a
=25
℃
-450uA
-400uA
-350uA
-300uA
-250uA
-200uA
-150uA
-100uA
T
a
=100
℃
T
a
=25
℃
I
B
=-50uA
COMMON EMITTER
V
CE
= -10V
0
4
8
12
16
20
24
-0.1
-1
-10
-100
-300
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
——
V
BEsat
——
I
C
I
C
-900
-500
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
-600
-100
T
a
=100
℃
β
=10
β
=10
-50
-10
-300
-0.1
-1
-10
-50
-1200
-20
-0.1
-1
-10
-100
-100
150
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
——
V
BE
f
T
——
I
C
-100
300
100
-10
-1
COMMON EMITTER
V
CE
=-20V
COMMON EMITTER
V
CE
= -10V
T
a
=25
℃
-0.1
100
10
-0.1
-0
-300
-600
-900
-1
-10
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
C
ob
/C
ib
——
V
CB
/V
EB
P
C
—— T
a
350
300
250
200
150
100
50
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
-0.1
0
-1
REVERSE VOLTAGE
-10
0
25
50
75
100
125
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
Page 2
Ver2.1
MMBTA92
SOT-23 Package Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
A
A1
A2
b
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
c
D
E
E1
e
0.950 TYP.
0.550 REF.
0.037 TYP.
0.022 REF.
e1
L
1.800
0.300
2.000
0.500
0.071
0.012
0.079
0.020
L1
Page 3
Ver2.1
MMBTA92
Pinning information
Pin
Simplified outline
Symbol
C
B
E
Marking
Type number
MMBTA92
Marking code
2D
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
Reel packing
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
COMPONENT
SPACING
APPROX.
BOX
(pcs)
PACKAGE
REEL SIZE
REEL
(pcs)
GROSS WEIGHT
CARTON
(pcs)
(kg)
(m/m)
SOT-23
3,000
4.0
30,000 183*123*183
178
382*257*387
240,000
11.6
7″
Page 4
Ver2.1
MMBTA92
Suggested thermal profiles for soldering processes
1.Storage environment:
T
e
mperature=5
o
C~40
o
C Humidity=55%
25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
T
s
max
T
s
min
tS
Preheat
Ramp-down
25
t25
o
C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T
L
to T
P
)
<3
o
C/sec
Preheat
–
T
e
mperature Min(
T
s
min)
–
T
e
mperature Max(
T
s
max)
-Time(min to max)(t
s
)
150
o
C
200
o
C
60~120sec
T
s
max to T
L
-Ramp-upRate
<3
o
C/sec
Time maintained above:
–
T
e
mperature(T
L
)
-Time(t
L
)
217
o
C
60~260sec
Peak
T
e
mperature(T
P
)
255
o
C-0/+5
o
C
Time within 5
o
C of actual Peak
T
e
mperature(t
P
)
10~30sec
Ramp-down Rate
<6
o
C/sec
Time 25
o
C to Peak
T
e
mperature
<6minutes
Page 5
Ver2.1
