FUXINSEMI-SS8050

SS8050  

General Purpose Transistors  

NPN Silicon  

FEATURES  

Complimentary to SS8550  

SOT-23  

MARKING: Y1  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

Unit  

V

Collector-Base Voltage  

40  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

25  

V

5

Collector Current  

1.5  

A

Collector Power Dissipation  

Thermal Resistance From Junction

T

o Ambient  

Junction

T

e

m

perature  

300  

mW  

P

C  

R

ΘJA  

T

j  

417  

℃

/W  

℃

150  

Storage

T

e

m

perature  

T

stg  

-55

～

+150  

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  

I

C

= 100

μ

A, I

E

=0  

I

C

= 0.1mA, I

B

=0  

I

E

=100

μ

A, I

C

=0  

M

in  

40  

25  

5

T

yp  

Max  

Unit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

V

V

CB

=40

V

,

I

E

=0  

0.1  

0.1  

0.1  

400  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

I

CEO  

V

C

E

=20

V

,

I

E

=0  

Emitter cut-off current  

I

EBO  

V

EB

= 5V, I

C

=0  

h

FE(1)  

V

CE

=1

V

,

I

C

= 100mA  

V

CE

=1

V

,

I

C

= 800mA  

I

C

=800mA, I

B

= 80mA  

I

C

=800mA, I

B

= 80mA  

120  

40  

DC current gain  

h

FE(2)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE(sat)  

V

BE(sat)  

0.5  

1.2  

V

V

V

CE

=10

V

,

I

C

= 50mA  

f=30MHz  

Transition frequency  

f

T  

100  

MHz  

CLASSIFICATION OF h

FE  

(1)  

Rank  

L

H

J

120-200  

200-350  

300-400  

Range  

Page 1  

Ver2.1  

SS8050  

General Purpose Transistors  

NPN Silicon  

h

FE

——  

I

C  

Static Characteristic  

140  

120  

100  

80  

1000  

COMMON EMITTER  

V

CE

=1V  

500uA  

COMMON  

EMITTER  

T

a

=25

℃

 

T

a

=100

℃  

T

a

=25

℃  

450uA  

400uA  

300  

100  

350uA  

300uA  

250uA  

200uA  

150uA  

100uA  

I

B

=50uA  

60  

40  

30  

10  

20  

0

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

1

3

10  

100  

1000 1500  

30  

300  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

I

C  

V

BEsat

—— I

C  

V

CEsat

——  

1000  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

300  

100  

T

a

=100

℃  

T

a

=25

℃  

T

a

=25

℃  

30  

10  

T

a

=100

℃  

3

1

β

=10  

β

=10  

1000  

1

3

10  

30  

100  

1

3

10  

30  

100  

300  

1000  

1500  

300  

1500  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

CB

/ V

EB  

I

C  

C

ob

/ C

ib

——  

V

BE

——  

200  

100  

1500  

1000  

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

C

ib  

300  

100  

T

a

=100

℃  

30  

10  

C

ob  

30  

10  

T

a

=25

℃  

3

1

3

1

COMMON EMITTER  

V

CE

=1V  

3

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

0.1  

0.3  

1

10  

20  

BASE-EMMITER VOLTAGE

 

V

BE

(V)  

REVERSE VOLTAGE  

V

(V)  

I

C  

f

T

——  

P

C

—— T

a  

1000  

350  

300  

250  

200  

150  

100  

50  

300  

100  

30  

10  

3

1

V

CE

=10V  

T

a

=25

℃  

0

30  

1

10  

100  

0

25  

50  

75  

100  

125  

150  

3

COLLECTOR CURRENT

 

I

C

(mA)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

Page 2  

Ver2.1  

SS8050  

General Purpose Transistors  

NPN Silicon  

SOT-23 Package Information  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

Max.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min.  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

Max.  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

0.950 TYP.  

0.550 REF.  

0.037 TYP.  

0.022 REF.  

e1  

L

1.800  

0.300  

2.000  

0.500  

0.071  

0.012  

0.079  

0.020  

L1  

Page 3  

Ver2.1  

SS8050  

General Purpose Transistors  

NPN Silicon  

Pinning information  

Pin  

Simplified outline  

Symbol  

C

C

PinB Base  

PinC Collector  

PinE Emitter  

B

E

B

E

Marking  

Type number  

SS8050  

Marking code  

Y1  

Suggested solder pad layout  

SOT-23  

0.037(0.95)  

0.037(0.95)  

0.079(2.0)  

0.035(0.90)  

0.031(0.80)  

Dimensions in inches and (millimeters)  

Reel packing  

INNER  

BOX  

(m/m)  

REEL  

DIA,  

(m/m)  

CARTON  

SIZE  

(m/m)  

COMPONENT  

SPACING  

APPROX.  

BOX  

(pcs)  

PACKAGE  

REEL SIZE  

REEL  

(pcs)  

GROSS WEIGHT  

CARTON  

(pcs)  

(kg)  

(m/m)  

SOT-23  

3,000  

4.0  

30,000 183*123*183  

178  

382*257*387  

240,000  

11.6  

7″  

Ver2.1  

Page 4  

SS8050  

General Purpose Transistors  

NPN Silicon  

Suggested thermal profiles for soldering processes  

1.Storage environment:

T

e

mperature=5

o

C~40

o

C Humidity=55%

 

25%  

2.Reflow soldering of surface-mount devices  

Critical Zone  

TL to TP  

Tp  

TP  

Ramp-up  

TL  

TL  

T

s

max  

T

s

min  

tS  

Preheat  

Ramp-down  

25  

t25

o

C to Peak  

Time  

3.Reflow soldering  

Profile Feature  

Soldering Condition  

Average ramp-up rate(T

L

to T

P

)  

<3

o

C/sec  

Preheat  

–

T

e

mperature Min(

T

s

min)  

–

T

e

mperature Max(

T

s

max)  

-Time(min to max)(t

s

)  

150

o

C  

200

o

C  

60~120sec  

T

s

max to T

L  

-Ramp-upRate  

<3

o

C/sec  

Time maintained above:  

–

T

e

mperature(T

L

)  

-Time(t

L

)  

217

o

C  

60~260sec  

Peak

T

e

mperature(T

P

)  

255

o

C-0/+5

o

C  

Time within 5

o

C of actual Peak  

T

e

mperature(t

P

)  

10~30sec  

Ramp-down Rate  

<6

o

C/sec  

Time 25

o

C to Peak

T

e

mperature  

<6minutes  

Ver2.1  

Page 5