GL-CS540A4
| Part # | GL-CS540A4 |
Download  | GL-CS540A4 |
R
○
CS540A4
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
V
DSS
I
D
100
30
V
A
General Description
：
The CS540A4 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications. The package form is TO-
252, which accords with the RoHS standard.
P
D
85
W
R
DS(ON)type
20
m
Ω
TO-252
Features
：
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances
100% Single Pulse avalanche energy
T
e
st
Applications
：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute
（
T
c
= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
Parameter
Drain-to-Source Voltage
Rating
Units
100
30
V
A
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
I
D
21
A
I
DM
V
GS
120
±
20
260
35
A
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
V
a2
E
AS
mJ
mJ
A
a1
E
AR
a1
I
AR
8
dv/dt
a3
Peak Diode Recovery dv/dt
Power Dissipation
5.0
85
V/ns
W
℃
℃
P
D
T
J
，
T
stg
T
L
Operating Junction and Storage Temperature Range
175
，
–
55 to 175
Maximum Temperature for Soldering
300
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○
CS540A4
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Units
Symbol
V
DSS
Parameter
T
e
st Conditions
Min. Typ. Max.
Drain to Source Breakdown Voltag
e
V
GS
=0
V
,
I
D
=250
µ
A
100 —
—
—
1
V
Δ
BV
DSS
/
Δ
T
J
Bvdss
T
e
mperature Coefficient
I
D
=250uA,Reference25
℃
V
DS
=100
V
,
V
GS
=0
V
,
T
a
=25
℃
—
—
0.1
—
V/
℃
I
DSS
Drain to Source Leakage Current
µ
A
V
DS
=80
V
,
V
GS
= 0
V
,
T
a
=125
℃
—
— 250
I
GSS(F)
I
GSS(R)
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS=
+20V
V
GS
=-20V
—
—
—
—
1
µ
A
µ
A
-1
ON Characteristics
Rating
Symbol Parameter
T
e
st Conditions
Units
Min. Typ. Max.
R
DS(ON)
V
GS(TH)
Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS
=10
V
,
I
D
=10A
—
20
—
30
m
Ω
V
DS
= V
GS
, I
D
= 250µA
1.0
3.0
V
Pulse width tp
≤
38
0µs,δ≤
2%
Dynamic Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
Units
S
Min. Typ. Max.
8.0 —
—
g
fs
C
iss
C
oss
C
rss
Forward
T
r
ansconductance
Input Capacitance
V
DS
=5
V
,
I
D
=10.0A
— 2000 —
— 300 —
— 250 —
V
GS
=0
V
,
V
DS
=50V
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Resistive Switching Characteristics
Rating
Symbol
Parameter
Turn-on Delay Time
T
e
st Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
t
r
t
d(OFF)
t
f
—
—
—
—
—
—
—
10
10
38
14
45
12
18
—
—
—
—
—
—
—
Rise Time
I
D
=15A,V
DD
=50V
V
GS
=10
V
,
R
G
=3.0
Ω
Turn-Off Delay Time
Fall Time
Q
g
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
I
D
=15A,V
DD
=50V
V
GS
=10V
Q
gs
Q
gd
nC
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○
CS540A4
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Units
Symbol
Parameter
T
e
st Conditions
Min. Typ. Max.
I
S
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
—
—
—
—
—
30
A
A
I
SM
V
SD
t
rr
— 120
— 1.5
I
S
=30A,V
GS
=0V
V
Reverse Recovery Time
66
—
ns
nC
I
S
=30A,T
j
= 25
°
C
dI
F
/dt=100A/us,V
GS
=0V
Q
rr
Reverse Recovery Charge
— 130 —
Pulse width tp
≤
38
0µs,δ≤
2%
Symbol
Parameter
Typ.
1.8
Units
R
θ
Jc
Junction-to-Case
℃
/W
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
EAS condition : Tj=25
℃
,VDD=4
0V,VG=10V,L=0.5mH,Rg=25Ω
a3
：
I
SD
=30A,di/dt
≤
100A/us,V
D
D
≤
BV
D
S,
Start T
J
=25
℃
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R
○
CS540A4
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Wuxi Guang Lei electronic technology co., LTD
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/
5
R
○
CS540A4
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
TEL:0755-23068119
Wuxi Guang Lei electronic technology co., LTD
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/
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