GL-GL20N02-8
| Part # | GL-GL20N02-8 |
Download  | GL-GL20N02-8 |
R
○
GL20N02-8
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
General Description
：
V
DSS
I
D
20
20
3
V
A
The GL20N02-8 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications. The package
form is SOP-8, which accords with the RoHS standard.
P
D
W
R
DS(ON)type
4.0
m
Ω
SOP-8
Features
：
R
DS(ON)
<5.0
mΩ @ V
GS
=10V (Typ4.0
mΩ)
High density cell design for ultra low R
dson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Applications
：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute
（
T
c
=25
℃
unless otherwise specified
）
：
Symbol
Parameter
Drain-to-Source Voltage
Rating
Units
V
DSS
I
D
20
20
V
A
Continuous Drain Current
Pulsed Drain Current
I
DM
V
GS
P
D
60
A
Gate-to-Source Voltage
±
12
3
V
Power Dissipation
Single pulse avalanche energy
a5
W
mJ
℃
E
AS
200
T
J
，
T
stg
Operating Junction and Storage Temperature Range
175
，
–
55 to 150
Wuxi Guang Lei electronic technology co., LTD
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/
6
R
○
GL20N02-8
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Units
Symbol
Parameter
T
e
st Conditions
Min. Typ. Max.
V
DSS
I
DSS
Drain to Source Breakdown Voltage
V
GS
=0
V
,
I
D
=250
µ
A
Drain to Source Leakage Current
V
DS
=20
V
,
V
GS
= 0
V
,
T
a
= 25
℃
20
—
—
—
—
—
—
V
µ
A
µ
A
1.0
0.1
I
GSS(F)
Gate to Source Forward Leakage
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=+12V
V
GS
=-12V
—
—
-0.1
µ
A
ON Characteristics
a
3
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
R
DS(ON)1
Drain-to-Source On-Resistance
R
DS(ON)2
Drain-to-Source On-Resistance
V
GS(TH)
Gate Threshold Voltage
V
GS
=10
V
,
I
D
=10A
V
GS
=4.5
V
,
I
D
=10A
V
DS
=V
GS
,I
D
=250µA
—
—
4.0
4.4
5.0
5.5
1.2
mΩ
mΩ
V
0.5
Pulse width tp
≤
38
0µs,δ≤
2%
Dynamic Characteristics
a4
Rating
Symbol
Parameter
T
e
st Conditions
Units
S
Min. Typ. Max.
15 — —
— 2000 —
g
fs
C
iss
C
oss
C
rss
Forward
T
r
ansconductance
Input Capacitance
V
DS
=5
V
,
I
D
=10A
V
GS
=0
V
,
V
DS
=10V
f=1.0MHz
Output Capacitance
—
—
500
210
—
—
pF
Reverse Transfer Capacitance
Resistive Switching Characteristics
a4
Symbol Parameter
Rating
T
e
st Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
Turn-on Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
—
—
—
—
—
—
—
7
18
30
17
28
7
—
—
—
—
—
—
—
V
DD
=10
V
,
I
D
=25A
V
GS
=5
V
,
R
G
=1.8
Ω
t
f
Fall Time
Q
g
T
o
tal Gate Charge
V
DD
=10
V
,
I
D
=25A
V
GS
=10V
Q
gs
Q
gd
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
nC
6.8
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○
GL20N02-8
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Units
Symbol
Parameter
T
e
st Conditions
I
S
=20A,V
GS
=0V
Min. Typ. Max.
I
S
Continuous Source Current
a2
(Body Diode)
Diode Forward Voltage
a3
—
—
—
—
20
A
V
V
SD
1.2
Symbol
R
θ
JA
Parameter
Typ.
42
Units
Junction-to-Ambient
℃
/W
a1
：
Repetitive Rating: Pulse width limited by maximum junction temperature.
a2
：
Surface Mounted on FR4 Board, t
≤
10sec.
a3
：
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
a4
：
Guaranteed by design, not subject to production
a5
：
EAS condition
：
Tj=25
℃
,V
DD
=15
V
,
V
GS
=10
V
,
L=1.0
mH,Rg=25Ω
Wuxi Guang Lei electronic technology co., LTD
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/
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R
○
GL20N02-8
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
T
e
st circurt
Wuxi Guang Lei electronic technology co., LTD
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/
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○
GL20N02-8
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Characteristics Curve
：
Wuxi Guang Lei electronic technology co., LTD
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/
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○
GL20N02-8
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
TEL:0755-23068119
Wuxi Guang Lei electronic technology co., LTD
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/
6
