GL-GL20N10B4S
| Part # | GL-GL20N10B4S |
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R
○
GL20N10B4S
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
V
DSS
I
D
100
20
V
A
General Description
：
The GL20N10B4S uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
The package form is TO-252, which accords with the RoHS
standard.
P
D
45
W
R
DS(ON)type
75
m
Ω
TO-252
Features
：
⚫
⚫
⚫
⚫
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances
100% Single Pulse avalanche energy
T
e
st
Applications
：
⚫
⚫
⚫
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute
（
T
c
= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
Parameter
Rating
Units
Drain-to-Source Voltage
Continuous Drain Current
100
V
A
20
I
D
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
14
A
I
DM
V
GS
80
A
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
±
20
V
a2
E
AS
89
mJ
mJ
A
a1
E
AR
4.2
a1
I
AR
15
dv/dt
a3
Peak Diode Recovery dv/dt
Power Dissipation
5.0
V/ns
W
℃
℃
P
D
45
175
，
–
55 to 175
300
T
J
，
T
stg
T
L
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Wuxi Guang Lei electronic technology co., LTD
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/
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R
○
GL20N10B4S
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
V
DSS
Drain to Source Breakdown Voltag
e
V
GS
=0
V
,
I
D
=250
µ
A
I
D
=250uA,Reference25
℃
100
—
—
0.1
—
—
—
1
V
Δ
BV
DSS
/
Δ
T
J
Bvdss
T
e
mperature Coefficient
V/
℃
V
DS
=100
V
,
V
GS
= 0
V
,
T
a
=25
℃
—
I
DSS
Drain to Source Leakage Current
µ
A
V
DS
=80
V
,
V
GS
=0
V
,
T
a
=125
℃
—
—
250
I
GSS(F)
I
GSS(R)
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
—
—
—
—
1
µ
A
µ
A
-1
ON Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
R
DS(ON)
V
GS(TH)
Drain-to-Source On-Resistance
Gate Threshold Voltage
V
GS
=10
V
,
I
D
=10A
—
—
75
m
Ω
V
DS
= V
GS
, I
D
= 250µA
1.0
2.0
3.0
V
Pulse width tp
≤
380
µ
s,
δ≤
2%
Dynamic Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
V
DS
=5
V
,
I
D
=10A
Units
S
Min. Typ. Max.
g
fs
C
iss
C
oss
C
rss
Forward
T
r
ansconductance
Input Capacitance
—
—
—
—
8
410
55
3
—
—
—
—
V
GS
=0
V
,
V
DS
=50V
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Resistive Switching Characteristics
Rating
Symbol
Parameter
Turn-on Delay Time
T
e
st Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
t
r
t
d(OFF)
t
f
—
—
—
—
—
—
—
5.5
3.2
7
—
—
—
—
—
—
—
Rise Time
I
D
=10A,V
DD
=50V
V
GS
=10
V
,
R
G
=3.0
Ω
Turn-Off Delay Time
Fall Time
1.8
7
Q
g
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
I
D
=10A,V
DD
=50V
V
GS
=10V
Q
gs
Q
gd
1.5
2.3
nC
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○
GL20N10B4S
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Symbol
I
S
Parameter
T
e
st Conditions
Units
A
Min. Typ. Max.
Continuous Source Current (Body
Diode)
—
—
20
I
SM
V
SD
t
rr
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
—
—
—
—
—
80
1.5
—
A
V
I
S
=20A,V
GS
=0V
—
Reverse Recovery Time
35
51
ns
nC
I
S
=20A,T
j
=25
°
C
dI
F
/dt=100A/us,V
GS
=0V
Q
rr
Reverse Recovery Charge
—
Pulse width tp
≤
380
µ
s,
δ≤
2%
Symbol
Parameter
Typ.
3.33
Units
R
θ
JC
Junction-to-Case
℃
/W
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
EAS condition : Tj=25
℃
,VDD=4
0V,VG=10V,L=0.5mH,Rg=25Ω
a3
：
I
SD
=20A,di/dt
≤
100A/us,V
D
D
≤
BV
D
S,
Start T
J
=25
℃
TEL:0755-23068119
Wuxi Guang Lei electronic technology co., LTD
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