GL-GL4N65FA9
| Part # | GL-GL4N65FA9 |
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○
GL4N65FA9
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOS
FET
V
DSS
(T
C
=150
℃
)
650
4
V
A
General Description
：
I
D
GL4N65FA9,
the
silicon
N-channel
Enhanced
P
D
(T
C
=25
℃
)
R
DS(ON)typ
30
1.9
W
Ω
VDMOSFET, is obtained by the self-aligned planar
T
e
chnology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching
circuit for system miniaturization and higher efficiency. The
package form is TO-220F, which accords with the RoHS
standard.
TO-220F
Features
：
Fast Switching
ESD Improved Capability
Low ON Resistance(Typical Data:1.9
Ω
)
Low Gate Charge
(Typical Data:14.5nC)
Low Reverse transfer capacitances(Typical:8.5pF)
100% Single Pulse avalanche energy
T
e
st
Applications
：
Power switch circuit of adaptor and charger
Absolute
（
T
c
= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
Parameter
Drain-to-Source Voltage
Rating
Units
650
4
V
A
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
I
D
3.2
16
A
a1
I
DM
A
V
GS
Gate-to-Source Voltage
±
30
280
30
V
a2
E
AS
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
mJ
mJ
A
a1
E
AR
a1
I
AR
2.5
5.0
30
dv/dt
a3
Peak Diode Recovery dv/dt
V/ns
W
Power Dissipation
P
D
Derating Factor above 25
°C
0.24
W/
℃
℃
T
J
，
T
stg
Operating Junction and Storage Temperature Range
150
，
–
55 to 150
T
L
MaximumTemperature for Soldering
300
℃
Wuxi Guang Lei electronic technology co., LTD
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/
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○
GL4N65FA9
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOS
FET
Electrical Characteristics
（
T
c
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Symbol
V
DSS
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
Drain to Source Breakdown Voltage
V
GS
=0
V
,
I
D
=250
µ
A
650 —
—
—
1
V
Δ
BV
DSS
/
Δ
T
J
Bvdss
T
e
mperature Coefficient
I
D
=250uA,Reference25
℃
V
DS
=650
V
,
V
GS
=0
V
,
T
a
=25
℃
—
—
0.67
V/
℃
—
—
I
DSS
Drain to Source Leakage Current
µ
A
V
DS
=520
V
,
V
GS
=0
V
,
T
a
=125
℃
—
100
I
GSS(F)
I
GSS(R)
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
—
—
—
—
1
µ
A
µ
A
-1
ON Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS(TH)
Gate Threshold Voltage
V
GS
=10
V
,
I
D
=2.0A
—
1.9
—
2.4
4.0
Ω
V
DS
=V
GS
,I
D
=
250µA
2.0
V
Pulse width tp
≤
30
0µs,δ≤
2%
Dynamic Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
V
DS
=15
V
,
I
D
=2.0A
Units
S
Min. Typ. Max.
g
fs
C
iss
C
oss
C
rss
Forward
T
r
ansconductance
Input Capacitance
—
—
—
—
3.5
544
55
—
—
—
—
V
GS
=0V V
DS
=25V
f=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
8.5
Resistive Switching Characteristics
Rating
Symbol
Parameter
Turn-on Delay Time
T
e
st Conditions
Units
ns
Min. Typ. Max.
t
d(ON)
t
r
t
d(OFF)
t
f
—
—
—
—
—
—
—
10
11
—
—
—
—
—
—
—
Rise Time
I
D
=4.0A,V
DD
=325V
R
g
=4.7
Ω
Turn-Off Delay Time
Fall Time
31
14
Q
g
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
14.5
3.0
6.0
I
D
=4.0A,V
DD
=325V
V
GS
=10V
Q
gs
Q
gd
nC
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GL4N65FA9
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOS
FET
Source-Drain Diode Characteristics
Rating
Symbol
Parameter
T
e
st Conditions
Units
Min. Typ. Max.
I
S
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
—
—
—
—
—
—
4
A
A
I
SM
V
SD
t
rr
16
1.5
—
I
S
=4.0A,V
GS
=0V
—
V
Reverse Recovery Time
430
ns
uC
I
S
=4.0A,T
j
=25
℃
Q
rr
Reverse Recovery Charge
— 1270 —
dI
F
/dt=100A/us,V
GS
=0V
Pulse width tp
≤
38
0µs,δ≤
2%
Symbol
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
Units
R
θ
JC
R
θ
JA
4.17
100
℃
/W
℃
/W
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10.0mH, I
D
=7.6A, Start T
J
=25
℃
a3
：
I
SD
=4A,di/dt
≤
100A/us,V
D
D
≤
BV
D
S,
Start T
J
=25
℃
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○
GL4N65FA9
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOS
FET
Characteristics Curve
：
Wuxi Guang Lei electronic technology co., LTD
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/
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R
○
GL4N65FA9
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOS
FET
Wuxi Guang Lei electronic technology co., LTD
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/
6
R
○
GL4N65FA9
无锡光磊电子科技有限公司
GL Silicon
N-Channel Power MOS
FET
Company
：
W
uxi Guang Lei electronic technology co., LTD
TEL
：
1
3961734102
Mr.yuan
Wuxi Guang Lei electronic technology co., LTD
6
/
6
