GL-GLZ24A8
| Part # | GL-GLZ24A8 |
Download  | GL-GLZ24A8 |
R
○
GLZ24A8
GL Silicon
N-Channel Power MOSFET
V
DSS
60
20
50
23
V
A
General Description
：
I
D
The GLZ24A8 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications. The package
form is TO-220AB, which accords with the RoHS standard.
Features
：
P
D
W
R
DS(ON)type
m
Ω
TO-220AB
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications
：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute
（
Tc= 25
℃
unless otherwise specified
）
：
Symbol
V
DSS
Parameter
Rating
Units
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °C
Pulsed Drain Current
60
20
V
A
A
A
V
I
D
14
I
DM
V
GS
80
Gate-to-Source Voltage
±
20
80
a2
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
mJ
mJ
A
E
AS
a1
4.5
11
E
AR
a1
I
AR
a3
Peak Diode Recovery dv/dt
Power Dissipation
5.0
50
V/ns
W
dv/dt
P
D
Operating
Temperature Range
MaximumTemperature for Soldering
Junction
and
Storage
T
J
，
T
stg
175
，
–
55 to 175
℃
℃
T
L
300
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R
○
GLZ24A8
GL Silicon
N-Channel Power MOSFET
Electrical Characteristics
（
Tc= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Drain to Source Breakdown
Voltage
V
G
S
=0V, I
D
=250µA
V
V
DSS
60
—
—
0.1
—
—
—
1
ID=250uA,Reference2
5
℃
Bvdss Temperature Coefficient
V/
℃
Δ
BV
DSS
/
Δ
T
J
V
D
S
= 60V, V
G
S
= 0V,
T
a
= 25
℃
V
D
S
=48V, V
G
S
= 0V,
—
Drain to Source Leakage Current
µA
I
DSS
—
—
250
T
a
= 125
℃
V
G
S
=+20V
V
G
S
=-20V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
µA
µA
I
GSS(F)
I
GSS(R)
—
—
—
—
1
-1
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
Typ. Max.
V
G
S
=10V,I
D
=10A
Drain-to-Source On-Resistance
Gate Threshold Voltage
R
DS(ON)
V
GS(TH)
—
23
33
m
Ω
V
D
S
= V
G
S
, I
D
= 250µA
1.0 1.85 2.5
V
Pulse width tp
≤
380µs,
δ
≤
2%
Dynamic Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
S
Min.
11
—
Typ.
Max.
—
V
D
S
=5V, I
D
=5A
Forward Transconductance
Input Capacitance
g
fs
—
C
iss
C
oss
C
rss
500
60
—
V
G
S
= 0V V
D
S
= 30V
f = 1.0MHz
Output Capacitance
—
—
pF
Reverse Transfer Capacitance
—
25
—
Resistive Switching Characteristics
Rating
Typ.
5
Symbol
Parameter
Test Conditions
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
—
2.6
16
—
I
D
=10A V
D
D
= 30V
V
G
S
= 10V
R
G
= 3.0
Ω
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
—
—
—
2.3
23
—
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
—
I
D
=10A V
D
D
=30V
V
G
S
= 10V
Q
gs
Q
gd
—
4.5
6
—
nC
—
—
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○
GLZ24A8
GL Silicon
N-Channel Power MOSFET
Source-Drain Diode Characteristics
Rating
Typ.
—
Test
Conditions
Symbol
Parameter
Units
Min.
—
Max.
20
80
1.5
—
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
I
S
A
A
I
SM
V
SD
trr
Qrr
—
—
I
S
=20A,V
G
S
=0V
—
—
V
I
S
=20A,T
j
= 25
°
C
Reverse Recovery Time
—
30
ns
nC
dI
F
/dt=100A/us,
V
G
S
=0V
Reverse Recovery Charge
—
49
—
Pulse width tp
≤
380µs,
δ
≤
2%
Symbol
Parameter
Typ.
Units
Junction-to-Case
2.5
62
R
θ
℃
/W
℃
/W
Jc
Junction-to-Ambient
R
θ
JA
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
EAS condition : Tj=25 ,VDD=
℃
30V,VG=10V,L=0.5mH,Rg=25
Ω
a3
：
I
SD
=20A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
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/
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R
○
GLZ24A8
GL Silicon
N-Channel Power MOSFET
Wuxi Guang Lei electronic technology co., LTD
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/
5
R
○
GLZ24A8
GL Silicon
N-Channel Power MOSFET
TEL:0755-23068119
Wuxi Guang Lei electronic technology co., LTD
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