GOFORD-06N06L
| Part # | GOFORD-06N06L |
Download  | GOFORD-06N06L |
06N06L
N-Channel Enhancement Mode Power MOSFET
Description
The 06N06L uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
Schematic diagram
General Features
l
V
DS
60V
5.5A
< 45mΩ
< 50mΩ
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 4.5V)
l
100% Avalanche Tested
l
RoHS Compliant
pin assignment
Application
l
Power switch
l
DC/DC converters
SOT-23-3L
Ordering Information
Device
Package
SOT-23-3L
Marking
Packaging
3000psc/Reel
06N06L
06N06L
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
5.5
22
A
A
(note1)
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation
P
D
0.96
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
R
thJA
130
ºC/W
TEL
：
0755-29961263
FAX:0755-29961466(A1514)
06N06L
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 60V, V
GS
= 0V
V
GS
=
±
20V
60
—
—
1
—
—
—
V
μA
nA
V
1
±
100
2.5
I
GSS
—
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5A
V
GS
= 4.5V, I
D
= 3A
1.7
36
40
—
—
45
Drain-Source On-Resistance
R
DS(on)
mΩ
S
50
g
FS
V
GS
= 5V, I
D
= 5A
—
17
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
765
46
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 30V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
40
8.9
2.4
1.4
4.5
2.5
14.5
3.5
V
DD
= 30V,
I
D
= 5A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= 30
V
,
I
D
= 5A,
R
G
= 3Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
5.5
1.2
A
V
V
SD
T
J
= 25ºC, I
SD
= 5A, V
GS
= 0V
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1514)
06N06L
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1514)
06N06L
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
10V
4.5V
V
DS
= 5V
3.5V
3V
25
℃
2.5V
V
GS
=2V
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
50
45
40
35
30
25
20
10
8
V
DD
= 30V
I
D
= 5A
V
GS
= 4.5V
V
GS
= 10V
6
4
2
0
0
2
4
6
8
10
0
2
4
6
8
10
I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
1400
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
0
10
20
30
40
50
60
V
DS
Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1514)
06N06L
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Drain-Source On-Resistance
Figure 8. Safe Operation Area
V
GS
= 10V,
I
D
= 5A
V
GS
= 4.5V,
I
D
= 3A
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
130
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1514)
