GOFORD-2300F
| Part # | GOFORD-2300F |
Download  | GOFORD-2300F |
GOFORD
2300F
Description
The
2300F designed
by the trench processing
techniques to achieve extremely low on-resistance.
And fast switching speed and improved transfer
effective . These features combine to make this
design an extremely efficient and reliable device for
variety of DC-DC applications.
Schematic diagram
Features
♦
V
DSS
R
DS(ON)
R
DS(ON)
(Typ) (Typ)
I
D
@
@
2.5V
4.5V
2300F
20V
A
6
0
2
m
Ω
5
2
m
Ω
♦
Low On-Resistance
Marking and pin Assignment
♦
150°C Operating Temperature
♦
Fast Switching
♦
RoHSCompliant
Application
●
Battery protection
●
Load switch
SOT-23
●
Power management
Ordering Information
Case
Part Number
Marking
Packaging
3000pcs/Reel
2300F
SOT-23
2300F
Symbol
Parameter
Rating
Unit
Common Ratings (T
C
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
±12
20
V
V
Drain-Source Breakdown Voltage
V
(BR)DSS
T
J
Maximum Junction
T
e
mperature
Storage
T
e
mperature Range
150
°C
°C
A
T
STG
I
S
-50 to 155
Diode Continuous Forward Current
6
=25°C
T
C
Mounted on Large Heat Sink
=25°C
=25°C
=100°C
=25°C
I
DM
T
C
T
C
T
C
T
C
Pulse Drain Current
T
e
sted
20
A
A
1
6
I
D
Continuous Drain Current(VGS=10V)
4.0
P
D
Maximum Power Dissipation
1.25
135
W
R
θ
JA
Thermal Resistance Junction-Ambient
°C/W
TEL
：
0755-29961263
FAX:075
5
–
29961466
GOFORD
2300F
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
V
GS
=0V I
D
=250
μ
A
20
—
—
—
V
V
(BR)DSS
Zero Gate Voltage Drain Current
(
T
c
=25
℃
)
V
DS
=20
V
,
V
GS
=0V
—
μ
A
0.3
I
DSS
Zero Gate Voltage Drain Current
(
T
c
=125
℃
)
V
DS
=20
V
,
V
GS
=0V
—
—
—
—
100
μ
A
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=±12
V
,
V
DS
=0V
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=4.5V, I
D
=2.3A
±100
nA
I
GSS
0.5
0.65
0.9
V
V
GS(TH)
R
DS(ON)
R
DS(ON)
Drain-Source On-State Resistance
—
20
25
27
m
Ω
Drain-Source On-State Resistance
V
GS
=2.5V, I
D
=2.3A
—
41
m
Ω
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
Input Capacitance
—
—
—
—
—
—
630
150
60
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
V
DS
=10
V
,
V
GS
=0
V
,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
11
V
DS
=10
V
,
I
D
=2.8A,
V
GS
=4.5V
Gate-Source Charge
Gate-Drain Charge
1.6
2.7
Q
gs
Q
gd
Switching Characteristics
14.5
46
Turn-on Delay Time
—
—
—
—
—
—
—
—
nS
nS
nS
nS
t
d(on)
V
DD
=10
V
,
I
D
=1A,
Turn-on Rise Time
t
r
R
G
=6
Ω
,
V
GS
=4.5
V
,
RL=5
Ω
,
52
Turn-Off Delay Time
t
d(off)
39
Turn-Off Fall Time
t
f
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
—
—
—
—
A
A
I
SD
5.2
20
T
c
=25
℃
Pulsed Source-drain current
I
SDM
(Body Diode)
T
j
=25
℃
,I
SD
=3A,
V
SD
Forward on voltage
—
—
1.2
V
V
GS
=0V
TEL
：
0755-29961263
FAX:075
5
–
29961466
GOFORD
2300F
Typical Characteristics
V
DS
, Drain -Source Voltage (V)
V
GS
, Gate -Source Voltage (V)
Fig1.
Typical Output Characteristics
Fig2.
Typical Transfer Characteristics
Tj=150°C
Tj=25°C
V
SD
, Source-Drain Voltage (V)
Tj – Junction
T
e
mperature (°C)
Fig3.
Typical Source-Drain Diode Forward Voltage
Fig4.
Normalized On-Resistance Vs. Temperature
TEL
：
0755-29961263
FAX:075
5
–
29961466
GOFORD
2300F
SOT-23 Package information
A
E
K
B
J
D
G
H
C
SOT-23
Dim
A
MIN
2.80
1.20
0.90
0.39
NOM
2.90
1.30
1.00
0.40
MAX
3.00
1.40
1.10
0.45
B
C
D
E
0.20MIN
1.90REF
–
G
H
J
0.00
0.05
2.30
0.10
0.15
2.50
0.10
K
2.40
All Dimensions in mm
TEL
：
0755-29961263
FAX:075
5
–
29961466
