GOFORD-5N20A-252
| Part # | GOFORD-5N20A-252 |
Download  | GOFORD-5N20A-252 |
GOFORD
5N20A
Description
Features
V
DSS
R
DS(ON)
I
D
(Typ)
@
10V
0
.
4
9
200V
Ω
5A
•
Fast switching
•
100% avalanche tested
TO-252
TO-251
•
Improved dv/dt capability
Application
•
DC Motor Control and Class D Amplifier
•
Uninterruptible Power Supply (UPS)
Automotive
•
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Max.
Symbol
Parameter
Units
TO-251/TO-252
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GSS
200
V
V
± 30
5
3.24
20
A
T
C
= 25
℃
I
D
Continuous Drain Current
A
T
C
= 100
℃
I
DM
Pulsed Drain Current
note1
A
E
AS
dv/dt
Single Pulsed Avalanche Energy
note2
Peak Diode Recovery Energy
note3
Power Dissipation
125
mJ
V/ns
W
5
78
T
C
= 25
℃
T
C
> 25
℃
P
D
Linear Derating Factor
0.625
1.6
W/
℃
℃
/W
℃
R
θ
JC
Thermal Resistance, Junction to Case
Operating and Storage
T
e
m
perature Range
T
J
, T
STG
-55 to +150
*Drain current limited by maximum junction temperature
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 1
GOFORD
5N20A
Electrical Characteristics
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
△
V
(BR)DSS
/
△
T
J
Drain-Source Breakdown Voltage
Breakdown Voltage
T
e
m
perature
Coefficient
V
GS
= 0
V
,
I
D
= 250
ꢀ
A
Reference to 25
℃
,
I
D
= 250
ꢀ
A
200
–
–
–
–
V
0.25
V/
℃
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, T
C
= 125
℃
V
DS
= 0
V
,
V
GS
= ±30V
–
–
–
–
–
–
1
ꢀ
A
ꢀ
A
nA
I
DSS
Zero Gate Voltage Drain Current
10
I
GSS
Gate to Body Leakage Current
±100
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
note4
V
DS
= V
GS
, I
D
= 250
ꢀ
A
V
GS
=10
V
,
I
D
= 2.5A
V
DS
=30
V
,
I
D
= 2.5A
1
–
1.9
0.49
5.2
3
0.58
–
V
ꢁ
S
Static Drain-Source On-Resistance
Forward Transconductance
–
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
255
30.2
2.3
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= 25
V
,
V
GS
= 0
V
,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
10.8
1.7
VDD = 160
V
,
I
D = 5A,
V
GS
= 10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
3.1
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
–
–
–
–
7.33
10.7
18.2
11.9
–
–
–
–
ns
ns
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 100V, I
D
= 5A,
RG = 10
ꢁ
, VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
5
20
1.4
–
A
A
I
SM
V
SD
t
rr
–
–
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
= 5A
V
GS
= 0V, I
F
= 5A,
di/dt =100A/
ꢀ
s
V
125.5
357
ns
nC
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
ꢁ
, Starting T
J
= 25
°
C
3. I
SD
≤
5A, di/dt
≤
200A/
ꢀ
s, V
DD
≤
B
VDSS
, Starting T
J
= 25
°
C
4. Pulse width
≤
300
ꢀ
s; duty cycle
≤
2%.
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 2
GOFORD
5N20A
Typical Performance Characteristics
25
20
15
10
5
20
PULSED TEST
DS
= 30V
V
GS
= 10.0V
7.5V
V
5.0V
4.5V
4.0V
25
℃
16
3.5V
12
150
℃
8
4
0
0
0
10
20
30
0
2
4
6
8
10
VDS,Drain-to-Source Voltage,V
VGS,Gate-to-Source Voltage,V
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
PULSED TEST
PULSED TEST
V
GS
= 0V
10
150
℃
V
GS
= 10V
25
℃
1
V
GS
= 20V
0.1
0
2
4
6
8
10
12
14
16
18
20
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
I
D
,Drain Current,A
VSD,Source-to-Drain Voltage,V
Figure 3. Drain-to-Source On Resistance vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage vs.
Source Current and Temperature
10000
10
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
8
1000
C
iss
6
4
100
C
oss
f = 1MHz
10
1
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
= C
gd
2
C
rss
I
D
= 5A
0
0.1
1
10
100
0
2
4
6
8
10
12
Q
G
,Total Gate Charge,nC
VDS,Drain-to-Source Voltage,V
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 3
GOFORD
5N20A
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
2.5
2
1.2
1.1
1
PULSED TEST
V
GS
= 10V
I
D
= 2.5A
1.5
1
0.9
0.5
0.8
-100
0
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
,Junction Temperature(
℃
)
T
J
,Junction Temperature(
℃
)
Figure 7. Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8. Normalized On Resistance vs.
Junction Temperature
6
5
4
3
2
1
0
100
10
ꢀ
s
10
100
ꢀ
s
1ms
1
10ms
Operation in This Area
is Limited by R
DS(on)
DC
0.1
SINGLE PULSE
T
C
=25
℃
T
J
=150
℃
0.01
1
10
100
1000
0
25
50
75
100
125
150
VDS,Drain-to-Source Voltage,V
T
C
,Case Temperature,
℃
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
Figure 9. Maximum Safe Operating Area for RU5N20A
D=0.50
0.20
1
0.10
0.05
0.1
0.02
0.01
Notes:
SINGLE PULSE
1.Duty Factor D = t1/t2
2.Peak Tj = Pdm x Zthjc + Tc
(THERMAL RESPONSE)
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
t,Pulse Duration,s
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 4
GOFORD
5N20A
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case for RU5N20A
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 5
GOFORD
5N20A
Figure 14. Unclamped Inductive Switching
T
e
st Circuit & Waveforms
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 6
