GOFORD-G03N10
| Part # | GOFORD-G03N10 |
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GOFORD
G03N10
Features
•
•
•
•
•
•
•
High Density Cell Design for Ultra Low R
DS(on)
Special Process Technology for High ESD Capability
Excellent Package for Good Heat Dissipation
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
N-C
HANNEL
MOSFET
Halogen Free. “Green” Device (Note 1)
Lead Free Finish/RoHS Compliant (“P” Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
•
•
Operating Junction Temperature Range : -55°C to +150°C
SOT-89
Storage Temperature Range: -55°C to +150°C
•
Thermal Resistance: 250°C/W Junction to Ambient
(Note
2
)
A
B
K
Parameter
Rating
100
±20
3
Symbol
V
DS
V
GS
I
D
Unit
V
4
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current
C
E
V
1
2
3
A
D
Pulsed Drain Current
(Note
3
)
Total Power Dissipation
H
G
I
DM
20
A
J
F
P
D
500
mW
L
L
Note: 1.
Halogen free “Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2
. Surface Mounted on FR4 Board , t
≤
10s.
DIMENSIONS
MM
MIN MAX MIN MAX
0.1
69
0.18
5
4.3
0
4.
7
0
1.
55
0.154
0.1
71
3.91
4.
3
5
0.031
0.0
47
0.80
1.
2
0
0.0
89
0.10
4
2.
25
2.
65
3
. Repetitive Rating : Pulse Width Limited by Junction
Temperature.
INCHES
DIM
NOTE
A
B
C
D
E
F
G
H
J
0.06
1
TYP
.
Internal Structure
D
TYP
.
TYP
.
0.118
3.00
0.013
0.0
20
0.33
0.
52
0.015 0.021
0.38 0.53
0.01
4
0.01
7
0.3
5
0.4
4
0.055 0.063
1.40 1.60
1. Gate
2,4. Drain
3. Source
K
L
G
1.5
0
0.
059
Marking:
03A10
S
Suggested Solder Pad Layout
1.900
0.075
mm
inches
0.800
0.032
2.600
0.102
3.200
0.126
0.900
0.035
1.500
0.059
1.400
0.055
4.400
0.173
1.400
0.055
TEL
：
0755-29961263
FAX:0755-29961466
GOFORD
G03N10
Electrical Characteristics
@ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
V
(BR)DSS
V
GS
=0V, I
D
=250µA
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
100
V
nA
µA
V
I
GSS
I
DSS
V
DS
=0V, V
GS
=±20V
V
DS
=100V, V
GS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5A
V
GS
=0V, I
S
=3A
±100
1
Gate-Threshold Voltage
(Note
4
)
Drain-Source On-Resistance
(Note
4
)
Diode Forward Voltage
(Note
4
)
Forward Transconductance
(Note
4
)
V
GS(th)
R
DS(on)
V
SD
1
3
2
140
1.2
mΩ
V
g
FS
V
DS
=5V, I
D
=2.9A
S
Dynamic Characteristics
(Note
5
)
Input Capacitance
C
iss
C
oss
C
rss
690
120
90
V
DS
=25V,V
GS
=0V,f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note
5
)
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
15.5
3.2
4.7
11
V
DS
=30V,V
GS
=10V,I
D
=3A
nC
ns
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay
Time
Turn-On Rise
Time
7.4
35
V
GS
=10V,V
DS
=30V,
R
GEN
=2.5Ω, I
D
=2A, RL=15Ω
t
d(off)
t
f
Turn-Off Delay
Time
Turn-Off Fall
Time
9.1
Note:
4
. Pulse Test : Pulse Width
≤
300μs, Duty Cycle
≤
2%.
5
. Guaranteed by Design, Not Subject to Producting.
TEL
：
0755-29961263
FAX:0755-29961466
GOFORD
G03N10
Curve Characteristics
Fig. 1 – Output Characteristics
Fig. 2 – Transfer Characteristics
20
15
10
5
20
16
12
8
V
DS
= 10V
Pulesd
T
A
=25°C
Pulsed
V
GS
=10V
V
GS
=4V
V
GS
=3.5V
T
A
=100°C
V
GS
=3V
4
T
A
=25°C
V
GS
=2.5V
4
0
0
0
1
2
3
5
0
1
2
3
4
Drain To Source Voltage (V)
Gate To Source Voltage (V)
Fig.
4
– R
DS(ON)
—
V
GS
Fig. 3 – R
DS(ON)
—
I
D
500
400
300
200
100
0
300
250
200
150
100
50
T
A
=25°C
Pulsed
T
A
=25°C
Pulsed
V
GS
=2.5V
I
D
=5A
V
GS
=10V
0
3
6
9
12
15
18
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate To Source Voltage (V)
Drain Current (A)
Fig. 5 – I
S
—
V
SD
Fig. 6 – Threshold Voltage
10
1.9
1.8
1.7
1.6
1.5
1.4
T
A
=25°C
Pulsed
1
0.1
I
D
= 250
μ
A
0.01
0.001
1E-4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
25
50
75
100
125
Source To Drain Voltage (V)
Junction Temperature
(°C)
TEL
：
0755-29961263
FAX:0755-29961466
