GOFORD-G04P10HE
| Part # | GOFORD-G04P10HE |
Download  | GOFORD-G04P10HE |
G04P10HE
P-Channel Enhancement Mode Power MOSFET
Description
The G04P10HE uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l
V
DS
-100V
-4A
< 200mΩ
< 250mΩ
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -4.5V)
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
l
ESD (HBM)>6KV
Application
l
Power switch
l
DC/DC converters
SOT-223
Ordering Information
Device
Package
Marking
Packaging
2500pcs/Reel
G04P10HE
SOT-223
G04P10
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
-4
-16
A
A
(note1)
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation
P
D
1.2
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
100
TEL
：
0755-29961263
FAX:0755-29961466
G04P10HE
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V
V
GS
=
±
20V
-100
—
—
—
—
V
μA
uA
V
-1
I
GSS
—
—
±
10
-2.8
200
250
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -6A
-1.2
—
-1.55
177
190
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
g
FS
V
DS
= -5V,I
D
= -3A
—
10
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1647
43
42
25
5
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -50V,
I
D
= -4A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
7
Turn-on Delay Time
Turn-on Rise Time
14
18
50
18
V
DD
= -50
V
,
I
D
= -4A,
R
G
= 9Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-4
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -6A, V
GS
= 0V
Reverse Recovery Charge
46
35
nC
ns
I
F
= -4A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466
G04P10HE
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
G04P10HE
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
12
10
8
12
10
8
V
DS
= -5V
-10V
-4.5V
-3.5V
-3V
6
6
-2.8V
25
℃
4
4
V
GS
= -2.5V
2
2
0
0
0
1
2
3
4
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
300
250
200
150
100
10
8
V
DD
= -50V,
I
D
= -4A
6
V
GS
= -4.5V
V
GS
= -10V
4
2
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
-I
D
-Drain Current (A)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
10
20
30
40
50
60
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
G04P10HE
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V,
I
D
= -6A
V
GS
= -4.5V,
I
D
= -6A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
