GOFORD-G050P03K
| Part # | GOFORD-G050P03K |
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G050P03K
P-Channel Enhancement Mode Power MOSFET
Description
The G050P03K uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
l
V
DS
-30V
-85A
< 4.5mΩ
< 6mΩ
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -4.5V)
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
TO-252
Ordering Information
Device
Package
Marking
Packaging
G050P03K
TO-252
G050P03
2500pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-30
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-85
-340
±
20
A
A
V
(note1)
I
DM
V
GS
Power Dissipation
P
D
100
225
W
Single pulse avalanche energy
（
note2
）
E
AS
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
ºC/W
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
50
1.25
TEL
：
0755-29961263
FAX:0755-29961466(A1707-V1.0)
G050P03K
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±
20V
-30
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-2.5
4.5
6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -20A
V
GS
= -4.5V, I
D
= -20A
-1
—
-1.2
3.5
4.5
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
g
FS
V
DS
= -5V,I
D
= -20A
—
58
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
7051
982
935
111
21
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -15V,
I
D
= -20A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
23
Turn-on Delay Time
Turn-on Rise Time
75
V
DD
= -15
V
,
I
D
= -20A,
R
G
= 3Ω
15
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
130
80
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-85
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -20A, V
GS
= 0V
Reverse Recovery Charge
8.5
24
nC
ns
I
F
= -20A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1707-V1.0)
G050P03K
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1707-V1.0)
G050P03K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
-3.5V
-10V
V
DS
= -5V
-4.5V
-3V
-2.5V
25
℃
V
GS
= -2V
0
0
0
1
2
3
4
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
10
8
V
DD
= -15V,
I
D
= -20A
6
V
GS
= -4.5V
V
GS
= -10V
4
2
0
10
20
30
40
0
20
40
60
80
100
120
-I
D
-Drain Current (A)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Ciss
Coss
Crss
5
10
15
20
25
30
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1707-V1.0)
G050P03K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V,
I
D
= -20A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
1.25
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1707-V1.0)
G050P03K
TO-252 Package
Information
E
b3
c
E1
b
e
L
(L1)
COMMON DIMENSIONS
mm
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
2.20
0.00
0.97
0.68
5.20
0.43
5.98
2.30
–
2.40
0.20
1.17
0.90
5.50
0.63
6.22
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
–
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
0.50
1.65
1.28
1.00
1.95
8
°
–
1.80
–
0
°
TEL
：
0755-29961263
FAX:0755-29961466(A1707-V1.0)
