GOFORD-G05P06L
| Part # | GOFORD-G05P06L |
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G05P06L
GOFORD
P-Channel Enhancement Mode Power MOSFET
Description
The G05P06L
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
⚫
I
D
(at V
GS
= -10V)
⚫
R
DS(ON)
(at V
GS
= -10V)
-60V
-5A
< 120m
Ω
⚫
R
DS(ON)
(at V
GS
= -4.5V)
⚫
100% Avalanche Tested
⚫
RoHS Compliant
< 170m
Ω
Marking and pin assignment
Application
⚫
Power switch
⚫
DC/DC converters
SOT-23-3L
Marking
Device
Package
SOT-23-3
Packaging
G05P06L
G05P06
3000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
-5
-20
A
A
(note1)
Gate-Source Voltage
V
GS
P
D
±
20
V
Power Dissipation
4.3
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Ambient
R
thJA
29
TEL
：
0755-29961263
FAX:0755-29961466
（
A1477
）
G05P06L
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -60V, V
GS
= 0V
V
GS
=
±
20V
-60
—
—
—
—
-1
V
uA
nA
V
I
GSS
—
—
±
100
-2.5
120
170
—
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= – 4A
V
GS
= -4.5V, I
D
= – 3A
V
DS
=-5V,I
D
=-3A
-1
—
-1.7
63
75
8.6
Drain-Source On-Resistance
R
DS(on)
m
Ω
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1366
57
52
37
4.5
10.5
8
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -30V,
I
D
= -4A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= -30
V
,
I
D
= -4A,
R
G
= 3
Ω
4
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
32
7
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
-5
-1.2
—
A
V
V
SD
Qrr
trr
T
J
= 25ºC, I
SD
= -4A, V
GS
= 0V
Reverse Recovery Charge
25
31
nC
ns
IS = -4A, V
GS
= 0V
di/dt=100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466
（
A1477
）
G05P06L
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
（
A1477
）
G05P06L
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3. Gate Charge
Figure 4. Drain Source On Resistance
V
GS
=-4.5V
V
GS
=-10V
Qg Gate Charge
（
nC
）
-ID-Drain Current
（
A
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Ciss
Coss
Crss
-Vds Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1477
）
G05P06L
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JA.
R
θ
JA
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1477
）
G05P06L
GOFORD
SOT-23-3L Package Information
Dimensions in Millimeters
Symbol
MIN.
NOM.
MAX.
3.00
1.70
1.20
0.50
0.55
A
B
C
D
E
G
H
J
2.80
1.50
1.00
0.30
0.25
2.90
1.60
1.10
0.40
0.40
1.90
0.00
0.047
2.60
–
0.127
0.10
0.207
3.00
K
2.80
All Dimensions in mm
TEL
：
0755-29961263
FAX:0755-29961466
（
A1477
）
