GOFORD-G080N10T

G080N10T  

N-Channel Enhancement Mode Power MOSFET  

Description  

The G080N10T uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

General Features  

l

V

DS  

100V  

180A  

7.5mΩ  

8mΩ  

Schematic diagram  

l

I

D

(at V

GS

= 10V)  

l

R

DS(ON)

(at V

GS

= 10V)  

l

R

DS(ON)

(at V

GS

= 4.5V)  

<

<

l

100% Avalanche Tested  

l

RoHS Compliant  

Application  

l

Power switch  

l

DC/DC converters  

TO-220  

Ordering Information  

Device  

Package  

Marking  

Packaging  

50pcs/Tube  

G080N10T  

TO-220  

G080N10  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

100  

V

Continuous Drain Current  

Pulsed Drain Current  

Gate-Source Voltage  

I

D  

180  

720  

±

20  

A

A

V

(note1)  

I

DM  

V

GS  

Power Dissipation  

P

D  

370  

361  

W

Single pulse avalanche energy  

（

note2

）  

E

AS  

mJ  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

ºC  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance, Junction-to-Ambient  

Maximum Junction-to-Case  

R

thJA  

R

thJC  

62  

ºC/W  

ºC/W  

0.34  

TEL

：

0755-29961263  

FAX:0755-29961466(A1799-V1.0)  

G080N10T  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Typ.  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 100V, V

GS

= 0V  

V

GS

=

±

20V  

100  

—  

—  

—  

—  

1

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

2.5  

7.5  

8.0  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 30A  

V

GS

= 4.5V, I

D

= 30A  

1.0  

—  

1.8  

5.8  

6.4  

Drain-Source On-Resistance  

R

DS(on)  

mΩ  

S

—  

g

FS  

V

GS

= 5V, I

D

= 30A  

—  

59  

—  

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

13912  

435  

363  

107  

33  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 50V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DD

= 50V,  

I

D

= 30A,  

V

GS

= 4.5V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

55  

Turn-on Delay Time  

Turn-on Rise Time  

91  

V

DD

= 50

V

,  

I

D

= 30A,  

R

G

= 2.7Ω  

405  

135  

209  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

180  

1.2  

—  

A

V

V

SD  

T

J

= 25ºC, I

SD

= 30A, V

GS

= 0V  

Reverse Recovery Charge  

108  

61  

nC  

ns  

Q

rr  

T

rr  

I

F

= 30A, V

GS

= 0V  

di/dt=100A/us  

Reverse Recovery Time  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. EAS

 

condition : Tj=25

℃

,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω  

3. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466(A1799-V1.0)  

G080N10T  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466(A1799-V1.0)  

G080N10T  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

120  

100  

80  

60  

40  

20  

0

120  

100  

80  

60  

40  

20  

0

10V  

4.5V  

V

DS

= 5V  

3.8V  

3.5V  

25

℃

 

3.2V  

V

GS

= 2.7V  

0

0

0

1

2

3

4

0

2

4

6

8

V

DS

, Drain-to-Source Voltage (V)  

V

GS

, Gate-to-Source Voltage (V)  

Figure 3. Drain Source On Resistance  

Figure 4. Gate Charge  

5

4

3

2

1

0

9

8

7

6

5

4

3

V

DD

= 50V,  

I

D

= 30A  

V

GS

= 4.5V  

V

GS

= 10V  

0

20  

40  

60  

80  

100  

120  

10  

20  

30  

40  

50  

I

D

-Drain Current

（

A

）  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

16000  

14000  

12000  

10000  

8000  

6000  

4000  

2000  

0

Ciss  

TJ=150

℃  

T

J

=25

℃  

Coss  

10  

Crss  

20  

30  

40  

50  

60  

V

DS

Drain-Source Voltage(V)  

V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1799-V1.0)  

G080N10T  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 7. Drain-Source On-Resistance  

Figure 8. Safe Operation Area  

V

GS

= 10V,  

I

D

= 30A  

T

J(MAX)

=150

℃

 

T

C

=25

℃  

T

J

, Junction Temperature (

º

C)  

V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

0.34

°

C/W  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1799-V1.0)  

G080N10T  

TO-220 Package Information  

TEL

：

0755-29961263  

FAX:0755-29961466(A1799-V1.0)