GOFORD-G08P06D3
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G08P06D3
GOFORD
P-Channel Trench MOSFET
Description
The G08P06D3 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
⚫
I
D
(at V
GS
= -10V)
⚫
R
DS(ON)
(at V
GS
= -10V)
-60V
-8A
< 52m
Ω
⚫
100% Avalanche Tested
⚫
RoHS Compliant
Application
⚫
Power switch
⚫
DC/DC converters
Marking and pin assignment
DFN3X3-8L
Marking
Device
Package
DFN3X3-8L
Packaging
G08P06D3
G08P06
5000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
-8
-32
A
A
(note1)
Gate-Source Voltage
V
GS
P
D
±
20
V
Power Dissipation
40
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
ºC /W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
3.13
22
TEL
：
0755-29961263
FAX:0755-29961466
(A1470)
G08P06D3
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Dynamic Parameters
Input Capacitance
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -60V, V
GS
= 0V
V
GS
=
±
20V
-60
—
—
—
—
-1
V
uA
nA
V
I
GSS
—
—
±
100
-3.5
52
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -6A
-2
—
-2.8
42
m
Ω
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
2972
110
101
25
4
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -30V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
V
DD
= -30V,
I
D
= -5A,
V
GS
= -10V
Gate-Source Charge
Q
gs
Q
gd
t
d(on)
t
r
Gate-Drain Charge
7
Turn-on Delay Time
15
58
30
36
Turn-on Rise Time
V
DD
= -30
V
,
I
D
= -5A,
R
G
= 6
Ω
ns
Turn-off Delay Time
t
d(off)
t
f
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-8
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -5A, V
GS
= 0V
Reverse Recovery Time
20
19
ns
nC
I
S
= -5A, V
GS
= 0V
di/dt=-100A/us
Recerse Recovery Charge
Q
rr
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466
(A1470)
G08P06D3
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
(A1470)
G08P06D3
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
V
DD
= -30V
ID=-5A
V
GS
= -10V
– ID-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance vs Vds
Figure 6. Source-Drain Diode Forward
Ciss
Coss
Crss
-Vds Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
(A1470)
G08P06D3
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
I
D
=-6A
V
GS
=-10V
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
(A1470)
G08P06D3
GOFORD
DFN3X3-8L Packag
e
i
nformation
D1
A
D2
E3
θ
E5
E2
E4
t
E1 E
K
b
L
c
e
L1
D
A1
COMMON
MM
SYMBOL
MIN
NO M
MAX
A
A1
b
0.70
–
0.75
–
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
°
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
°
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
K
L
L1
t
θ
10
°
TEL
：
0755-29961263
FAX:0755-29961466
(A1470)
