GOFORD-G10N10A
| Part # | GOFORD-G10N10A |
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G10N10A
Description
D
The G10N10A
uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G
S
General Features
Schematic diagram
●
RDS(ON)
@10V (typ)
VDSS
100V
ID
G10N10A
10A
104
m
Ω
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
arking and pin Assignment
M
●
RoHS Compliant
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-252
Ordering Information
Part Number
Packaging
Marking
Case
G10N10A
TO-252
2500pcs/Reel
G10N10A
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
V
Drain-Source Voltage
V
DS
Gate-Source Voltage
±20
V
V
GS
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
10
A
I
D
24
A
I
DM
P
D
Maximum Power Dissipation
28
W
℃
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
S
T
G
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
41.7
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250
ꢀ
A
100
–
111
–
–
V
n
A
V
DS
=100V, V
=0V
900
GS
TEL
：
0755-29961263
FAX
：
0755-29961466
Page1 (A0818)
G10N10A
–
1
–
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
I
GSS
V
GS
=±20V,V
DS
=0V
±90
nA
–
V
GS(th)
V
DS
=V
GS
,I
D
=250
ꢀ
A
1.8
3
V
m
ꢁ
S
V
GS
=10V, I
D
=2A
104
114
8
130
145
–
Drain-Source On-State Resistance
R
DS(ON)
=
V
GS
4.5V, I
D
=1A
V
DS
Forward Transconductance
Dynamic Characteristics
(Note4)
g
FS
=5V,I =2.9A
D
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
690
120
90
–
–
–
PF
PF
PF
V
DS
=25V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
11
7.4
35
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=30V,I
D
=2A,R
L
=15
ꢁ
V
GS
=10V,R
G
=2.5
ꢁ
Turn-Off Delay Time
Turn-Off Fall Time
9.1
15.5
3.2
4.7
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=30V,I
D
=3A,
V
GS
=10V
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltag
e
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=3A
–
–
–
–
1.2
10
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
ꢀ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
TEL：0755-29961263
FAX：0755-2996146
Page
2
(A0818)
G10N10A
Test Circuit
1
）
E
AS
test circuit
2
）
Gate charge test circuit
3
）
Switch Time Test Circuit
TEL：0755-29961263
FAX：0755-2996146
Page
3
(A0818)
G10N10A
Typical Electrical and Thermal Characteristics (curves)
Figure1. Source-Drain Diode Forward Voltage
Figure2. Safe operating area
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. R
DS(ON)
vs Junction Temperature
TEL：0755-29961263
FAX：0755-2996146
Page
4
(A0818)
G10N10A
Figure7. BV
DSS
vs Junction Temperature
Figure8. V
GS(th)
vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
TEL：0755-29961263
FAX：0755-2996146
Page
5
(A0818)
G10N10A
TO-252 Package information
E
b3
c
E1
A2
b
e
L
(L1)
COMMON DIMENSIONS
mm
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
2.20
0.00
0.97
0.68
5.20
0.43
5.98
2.30
–
2.40
0.20
1.17
0.90
5.50
0.63
6.22
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
–
–
1.80
0.88
0.50
1.65
0°
1.28
1.00
1.95
8°
–
TEL：0755-29961263
FAX：0755-2996146
Page
6
(A0818)
