GOFORD-G115P06T
| Part # | GOFORD-G115P06T |
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G115P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G115P06T uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
l
V
DS
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
-60V
-98A
< 11.5mΩ
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
TO-220
Ordering Information
Device
Package
Marking
Packaging
50pcs/Tube
G115P06T
TO-220
G115P06
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-98
-392
±
20
A
A
V
(note1)
I
DM
V
GS
Power Dissipation
P
D
211.9
81
W
Single pulse avalanche energy
（
note2
）
E
AS
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
ºC/W
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
50
0.59
TEL
：
0755-29961263
FAX:0755-29961466(A1803-V1.1)
G115P06T
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -60V, V
GS
= 0V
V
GS
=
±
20V
-60
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-4.0
11.5
Gate-Source Threshold Voltage
Drain-Source On-Resistance
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -15A
-2.0
—
-2.7
9.3
mΩ
Forward Transconductance
g
FS
V
DS
= -5V,I
D
= -15A
—
19
—
S
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
9359
550
478
125
27
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -30V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -30V,
I
D
= -15A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
gs
Q
gd
t
d(on)
t
r
32
30
V
DD
= -30
V
,
I
D
= -15A,
R
G
= 3Ω
33
ns
t
d(off)
t
f
92
58
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-98
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -15A, V
GS
= 0V
Reverse Recovery Charge
118
82
nC
ns
I
F
= -15A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1803-V1.1)
G115P06T
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1803-V1.1)
G115P06T
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
V
DS
= -5V
-10V
-6V
-5.5V
-5V
-4.5V
25
℃
V
GS
= -4V
0
1
2
3
4
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
10
8
12
11
10
9
V
DD
= -30V,
I
D
= -15A
6
V
GS
= -10V
4
8
2
7
0
6
0
30
60
90
120
150
0
5
10
15
20
25
30
-I
D
-Drain Current (A)
Figure 5. Capacitance
Ciss
Qg Gate Charge
（
nC
）
Figure 6. Source-Drain Diode Forward
12000
10000
8000
6000
4000
2000
0
Coss
Crss
0
10
20
30
40
50
60
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1803-V1.1)
G115P06T
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V,
I
D
= -15A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1803-V1.1)
G115P06T
TO-220 Package
Information
TEL
：
0755-29961263
FAX:0755-29961466(A1803-V1.1)
