GOFORD-G15N06K
| Part # | GOFORD-G15N06K |
Download  | GOFORD-G15N06K |
G15N06K
N-Channel Enhancement Mode Power MOSFET
Description
The G15N06K uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
l
V
DS
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
60V
15A
< 45mΩ
Schematic diagram
l
R
DS(ON)
(at V
GS
= 4.5V)
l
100% Avalanche Tested
l
RoHS Compliant
< 50mΩ
Application
l
Power switch
l
DC/DC converters
TO-252
Device
Package
TO-252
Marking
Packaging
2500pcs/Reel
G15N06K
G15N06
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
15
60
A
A
V
(note1)
(note3)
I
DM
V
GS
±
20
Single Pulse Avalanche Energy
Power Dissipation
E
AS
P
D
12
40
mJ
W
Operating Junction and Storage Temperature Range
Thermal Resistance
T
J
, T
stg
-55 To 150
ºC
Parameter
Symbol
Value
Unit
ºC/W
Thermal Resistance, Junction-to-Case
R
thJC
3.1
TEL
：
0755-29961263
FAX:0755-29961466
（
A1545
）
G15N06K
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
=
±
20V
100
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±
100
3
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 6A
VDS=25V,ID=8A
1
1.9
31
39
17.4
—
45
50
—
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
763
41
37
25
4.5
6.5
7
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 30V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 50V,
I
D
= 10A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= 30
V
,
I
D
= 10A,
R
G
= 3Ω
20
16
23
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
15
A
V
V
SD
T
J
= 25ºC, I
SD
= 8A, V
GS
= 0V
1.2
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. V
DD
= 50V, R
G
= 25Ω,
L=0.5 mH, Starting T
J
= 25
°
C
。
TEL
：
0755-29961263
FAX:0755-29961466
（
A1545
）
G15N06K
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
（
A1545
）
G15N06K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6V
10V
5V
8V
4.5V
3.3V
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Gate Charge
Figure 4. Drain Source On Resistance
V
GS
=4.5V
V
GS
=10V
Qg Gate Charge
（
nC
）
ID-Drain Current
（
A
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Ciss
Coss
Crss
Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1545
）
G15N06K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= 10V
I
D
= 15A
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1545
）
G15N06K
TO-252 Package Information
Dimensions in Millimeters
Symbol
MIN.
2.2
NOM.
2.3
MAX.
2.4
A
A1
A2
b
0
ꢀ
0.2
0.97
0.68
5.2
1.07
0.78
5.33
0.53
6.1
1.17
0.9
b3
c
5.5
0.43
5.98
0.63
6.22
D
D1
E
5.30REF
6.6
6.4
6.8
E1
e
4.63
ꢀ
ꢀ
2.286BSC
10.1
H
9.4
10.5
1.75
L
1.38
1.5
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
ꢀ
0.88
0.5
1.28
1
ꢀ
1.65
0
°
1.8
1.95
8
°
ꢀ
TEL
：
0755-29961263
FAX:0755-29961466
（
A1545
）
