GOFORD-G16N03S
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G16N03S
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G16N03S uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 10V)
30V
16A
< 10m
Ω
⚫
R
DS(ON)
(at V
GS
= 5V)
⚫
100% Avalanche Tested
⚫
RoHS Compliant
< 15m
Ω
Marking and pin assignment
Application
⚫
Power switch
⚫
DC/DC converters
SOP-8
Marking
Device
Package
SOP-8
Packaging
G16N03S
G16N03
4000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
30
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
16
64
A
A
(note1)
Gate-Source Voltage
V
GS
P
D
±
20
V
Power Dissipation
2.5
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Ambient
R
thJA
50
TEL
：
0755-29961262
FAX:0755-29961466
G16N03S
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
=
±
20V
30
—
—
1
—
—
—
1
V
μA
nA
V
I
GSS
—
±
100
2.5
10
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
V
GS
= 5V, I
D
= 10A
V
DS
=10V,I
D
=10A
1.35
6.7
8.3
25
—
—
—
Drain-Source On-Resistance
R
DS(on)
m
Ω
15
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
950
280
160
16.6
3.6
3
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 15V,
I
D
= 10A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
10
V
DD
= 15
V
,
I
D
= 10A,
R
G
= 1.8
Ω
8
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
30
5
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
16
A
V
V
SD
T
J
= 25ºC, I
SD
= 10A, V
GS
= 0V
1.2
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961262
FAX:0755-29961466
G16N03S
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961262
FAX:0755-29961466
G16N03S
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Drain Source On Resistance
Figure 3. Gate Charge
10
8
10
V
DS
=15V
I
D
=10A
9
8
7
6
5
V
GS
=5V
6
V
GS
=10V
4
2
0
0
5
10
15
20
0
5
10
15
20
Qg Gate Charge
（
nC
）
ID-Drain Current
（
A
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
FAX:0755-29961466
TEL
：
0755-29961262
G16N03S
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Pulse Width (s)
TEL
：
0755-29961262
FAX:0755-29961466
G16N03S
GOFORD
SOP-8 Package Information
Dimensions in Millimeters
Symbol
MIN.
NOM.
6.000
MAX.
6.200
5.000
A
A1
B
5.800
4.800
4.900
1.270BSC
0.40^8x
3.880
B1
C
0.35^8x
3.780
—
0.45^8x
3.980
0.253
0.250
1.550
1.700
1.700
C1
D
0.203
0.050
1.350
1.500
1.500
0.150
D1
D2
D2
E
1.450
1.600
1.600
1.060REF
0.700
E1
F
0.400
0.100
0.250BSC
°
°
°
6
F1
2
4
TEL
：
0755-29961262
FAX:0755-29961466
