GOFORD-G18P03D3

G18P03D3  

P-Channel Enhancement Mode Power MOSFET  

Description  

The G18P03D3 uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

General Features  

Schematic diagram  

l

V

DS  

-30V  

-28A  

< 10mΩ  

< 15mΩ  

l

I

D

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -4.5V)  

l

100% Avalanche Tested  

l

RoHS Compliant  

pin assignment  

Application  

l

Power switch  

l

DC/DC converters  

DFN3X3-8L  

Ordering Information  

Device  

Package  

DFN3x3-8L  

Marking  

Packaging  

3000pcs/Reel  

G18P03D3  

G18P03  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

-30  

V

Continuous Drain Current  

Pulsed Drain Current  

I

D  

I

DM  

-28  

-112  

A

A

(note1)  

Gate-Source Voltage  

V

GS  

±

20  

V

Power Dissipation  

P

D  

42  

W

ºC  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

ºC/W  

ºC/W  

Thermal Resistance, Junction-to-Ambient  

Maximum Junction-to-Case  

R

thJA  

R

thJC  

80  

3

TEL

：

0755-29961263  

FAX:0755-29961466(A1331)  

G18P03D3  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

V

DS

= -30V, V

GS

= 0V  

V

GS

=

±

20V  

-30  

—  

—  

—  

—  

-1  

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

-2.5  

10  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -10A  

V

GS

= -4.5V, I

D

= -8A  

-1  

—  

-1.5  

7.5  

11  

Drain-Source On-Resistance  

R

DS(on)  

mΩ  

S

—  

15  

g

FS  

V

DS

= -5V,I  

D

= -10A  

—  

22  

—  

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

3074  

518  

455  

45  

6

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= -15V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DD

= -15V,  

I

D

= -10A,  

V

GS

= -10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

13  

11  

Turn-on Delay Time  

Turn-on Rise Time  

V

DD

= -15

V

,  

I

D

= -10A,  

R

G

= 3Ω  

9

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

24  

12  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

V

SD  

Q

rr  

T

rr  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

-28  

-1.2  

—  

A

V

T

J

= 25ºC, I

SD

= -10A, V

GS

= 0V  

Reverse Recovery Charge  

8

nC  

ns  

I

F

= -10A, V

GS

= 0V  

di/dt=-100A/us  

Reverse Recovery Time  

15  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466(A1331)  

G18P03D3  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466(A1331)  

G18P03D3  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

120  

100  

80  

60  

40  

20  

0

120  

100  

80  

60  

40  

20  

0

-10V  

-7V  

-6V  

-5.5V  

-5V  

V

DS

= -5V  

V

GS

= -4.5V  

25

℃

 

0

0.5  

1

1.5  

2

2.5  

3

0

2

4

6

8

-V

DS

, Drain-to-Source Voltage (V)  

-V

GS

, Gate-to-Source Voltage (V)  

Figure 3.Drain Source On Resistance  

Figure 4. Gate Charge  

16  

14  

12  

10  

8

10  

8

V

DD

= -15V,  

I

D

= -10A  

6

V

GS

= -4.5V  

V

GS

= -10V  

4

6

4

2

2

0

0

0

10  

20  

30  

40  

50  

0

5

10  

15  

20  

-I

D

-Drain Current (A)  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

4000  

3500  

3000  

2500  

2000  

1500  

1000  

500  

Ciss  

Coss  

Crss  

0

0

5

10  

15  

20  

25  

30  

-V

DS

Drain-Source Voltage(V)  

-V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1331)  

G18P03D3  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 10. Safe Operation Area  

Figure 7. Drain-Source On-Resistance  

V

DD

= -15V,  

I

D

= -10A  

V

DD

= -15V,  

I

D

= -10A  

T

J

, Junction Temperature (

º

C)  

-V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

3

°

C/W  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1331)  

G18P03D3  

DFN3x3-8L Package Information  

D1  

A

D2  

E3  

θ

E5  

E2  

E4  

t

E1 E  

K

b

L

c

e

L1  

D

D

A1  

COMMON  

MM  

SYMBOL  

MIN  

0.70  

NOM  

0.75  

MAX  

A

A1  

b

0.85  

0.05  

0.40  

0.25  

3.45  

3.25  

2.65  

3.45  

3.20  

1.94  

0.65  

0.77  

0.30  

0.70  

0.89  

0.50  

0.20  

0.13  

14。  

–

–

0.20  

0.10  

3.15  

3.00  

2.29  

3.15  

2.90  

1.54  

0.28  

0.37  

0.10  

0.60  

0.30  

0.152  

3.30  

3.15  

2.45  

3.30  

3.05  

1.74  

0.48  

0.57  

0.20  

0.65  

0.69  

0.40  

0.125  

0.075  

12。  

c

D

D1  

D2  

E

E1  

E2  

E3  

E4  

E5  

e

K

0.59  

0.30  

0.06  

0

L

L1  

t

θ

10。  

TEL

：

0755-29961263  

FAX:0755-29961466(A1331)