GOFORD-G1K2C10S2
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G1K2C10S2
N and P Channel Enhancement Mode Power MOSFET
Description
The G1K2C10S2 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l
NMOS
l
V
DS
100V
3A
130mΩ
145mΩ
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 4.5V)
<
<
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
l
PMOS
l
V
DS
-100V
-3.5A
< 200mΩ
< 215mΩ
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -4.5V)
pin assignment
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
SOP-8 Dual
Ordering Information
Device
Package
Marking
Packaging
G1K2C10S2
SOP-8 Dual
G1K2C10D
4000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
NMOS
PMOS
Unit
Drain-Source Voltage
V
DS
100
-100
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
3
-3.5
-14
A
A
(note1)
12
±
20
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation
P
D
2
3.1
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
-55 To 150
Thermal Resistance
Parameter
Symbol
NMOS
PMOS
Unit
Thermal Resistance, Junction-to-Ambient
R
thJA
62.5
40
ºC/W
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
NMOS Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
=
±
20V
100
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±
100
2.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5A
V
GS
= 4.5V, I
D
= 5A
1
1.5
110
120
—
130
145
Drain-Source On-Resistance
Forward Transconductance
R
DS(on)
mΩ
S
—
g
FS
V
GS
= 5V, I
D
= 5A
—
4
—
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
668
25
16
22
3
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 50V,
I
D
= 5A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
gs
Q
gd
t
d(on)
t
r
6
11
7
V
DD
= 50
V
,
I
D
= 5A,
R
G
= 2.5Ω
ns
t
d(off)
t
f
35
9
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
3
1.2
—
A
V
V
SD
T
J
= 25ºC, I
SD
=5A, V
GS
= 0V
Reverse Recovery Charge
27
26
nC
ns
Q
rr
T
rr
I
F
= 5A, V
GS
= 0V
di/dt=100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
NMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
10V
V
DS
= 5V
3.2V
4.5V
3V
25
℃
2.7V
V
GS
= 2.5V
0
0.5
1
1.5
2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
160
140
120
100
80
10
8
V
DD
= 50V,
I
D
= 5A
V
GS
= 4.5V
V
GS
= 10V
6
4
2
60
0
0
2
4
6
8
10
0
5
10
15
20
25
I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
900
800
700
600
500
400
300
200
100
0
Ciss
Coss
Crss
0
10
20
30
40
50
60
V
DS
Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
NMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Drain-Source On-Resistance
Figure 8. Safe Operation Area
V
GS
= 4.5V,
I
D
= 5A
V
GS
= 4.5V,
I
D
= 5A
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
62.5
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
PMOS Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V
V
GS
=
±
20V
-100
—
—
—
—
V
μA
uA
V
-1
I
GSS
—
—
±
10
-2.5
200
215
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -2A
-1
—
-1.8
165
175
Drain-Source On-Resistance
Forward Transconductance
R
DS(on)
mΩ
S
—
g
FS
V
DS
= -5V,I
D
= -3A
—
8
—
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1732
47
45
23
4.2
5.2
24
5
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -50V,
I
D
= -3A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
gs
Q
gd
t
d(on)
t
r
V
DD
= -50
V
,
I
D
= -3A,
R
G
= 3Ω
ns
t
d(off)
t
f
19
11
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-3.5
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -3A, V
GS
= 0V
Reverse Recovery Charge
22
29
nC
ns
I
F
= -3A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
PMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
-10V
-4.5V
-3.5V
-3.1V
V
DS
= -5V
-2.8V
V
GS
= -2.5V
25
℃
0
1
2
3
4
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
260
240
220
200
180
160
140
120
100
V
DD
= -50V,
I
D
= -3A
V
GS
= -4.5V
V
GS
= -10V
0
1
2
3
4
5
6
-I
D
-Drain Current (A)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
10
20
30
40
50
60
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
PMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V,
I
D
= -3A
V
GS
= -4.5V,
I
D
= -2A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
40
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
G1K2C10S2
SOP-8 Dual
Package Information
Dimensions in Millimeters
Symbol
ꢀ
MIN.
NOM.
6.000
MAX.
6.200
5.000
A
A1
B
5.800
4.800
4.900
1.270BSC
0.40^8x
3.880
B1
C
0.35^8x
3.780
—
0.45^8x
3.980
0.253
0.250
1.550
1.700
1.700
C1
D
0.203
0.050
1.350
1.500
1.500
0.150
D1
D2
D2
E
1.450
1.600
1.600
1.060REF
0.700
E1
F
0.400
0.100
0.250BSC
°
2
°
4
°
6
F1
TEL
：
0755-29961263
FAX:0755-29961466(A1695-V1.0)
