GOFORD-G1K3N10LL
| Part # | GOFORD-G1K3N10LL |
Download  | GOFORD-G1K3N10LL |
G1K3N10LL
N-Channel Enhancement Mode Power MOSFET
Description
The G1K3N10LL uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l
V
DS
100V
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 4.5V)
3.4A
130mΩ
145mΩ
<
<
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
SOT-23-6L
Ordering Information
Device
Package
Marking
Packaging
3000pcs/Reel
G1K3N10LL
SOT-23-6L
G1K3N10
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
100
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
3.4
13.6
A
A
(note1)
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation
P
D
2.28
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
R
thJA
54.8
ºC/W
TEL
：
0755-29961263
FAX:0755-29961466(A1751-V1.0)
G1K3N10LL
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
=
±
20V
100
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±
100
2.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
GS
= 4.5V, I
D
= 1A
1.0
—
1.7
100
107
130
145
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
g
FS
V
GS
= 5V, I
D
= 1A
—
8
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
808
29
24
22
2.8
5
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 50V,
I
D
= 1A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
7
V
DD
= 50
V
,
I
D
= 1A,
R
G
= 3Ω
2.7
22
4.6
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
3.4
1.2
—
A
V
V
SD
T
J
= 25ºC, I
SD
= 1A, V
GS
= 0V
Reverse Recovery Charge
22
30
nC
ns
Q
rr
T
rr
I
F
= 1A, V
GS
= 0V
di/dt=100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1751-V1.0)
G1K3N10LL
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1751-V1.0)
G1K3N10LL
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
12
10
8
12
10
8
10V
V
DS
= 5V
4.5V
3.3V
3V
6
6
25
℃
4
4
2.7V
2
2
V
GS
= 2.5V
0
0
0
1
2
3
4
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
10
8
160
140
120
100
80
V
DD
= 50V,
I
D
= 1A
V
GS
= 4.5V
V
GS
= 10V
6
4
2
0
60
0
5
10
15
20
25
0
2
4
6
8
10
I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
1400
1200
1000
800
600
400
200
0
Ciss
Coss
10
Crss
0
20
30
40
50
60
V
DS
Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1751-V1.0)
G1K3N10LL
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Drain-Source On-Resistance
Figure 8. Safe Operation Area
V
GS
= 10V,
I
D
= 1A
V
GS
= 4.5V,
I
D
= 1A
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
54.8
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1751-V1.0)
G1K3N10LL
SOT-23-6L Package
Information
TEL
：
0755-29961263
FAX:0755-29961466(A1751-V1.0)
