GOFORD-G1NP02ELL
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G1NP02ELL
GOFORD
N and P Channel Enhancement Mode Power MOSFET
Description
This Product uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
General Features
Schematic diagram
⚫
NMOS
⚫
V
DS
20V
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 4.5V)
⚫
R
DS(ON)
(at V
GS
= 2.5V)
1.36A
< 375m
Ω
< 450m
Ω
⚫
R
DS(ON)
(at V
GS
= 1.8V)
< 800m
Ω
⚫
PMOS
⚫
V
DS
Marking and pin assignment
-20V
⚫
I
D
(at V
GS
= -10V)
⚫
R
DS(ON)
(at V
GS
= -4.5V)
⚫
R
DS(ON)
(at V
GS
= -2.5V)
⚫
R
DS(ON)
(at V
GS
= -1.8V)
⚫
100% Avalanche Tested
-1.15A
< 520m
Ω
< 700m
Ω
< 1000m
Ω
⚫
RoHS Compliant
⚫
ESD (HBM)>2.0KV
SOT-23-6L
Application
⚫
Power switch
⚫
DC/DC converters
Marking
Device
Package
Packaging
G1NP02ELL
SOT-23-6
G1NP02
3000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
NMOS
PMOS
Unit
Drain-Source Voltage
V
DS
20
-20
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
1.36
5.4
-1.15
-3.4
A
A
(note1)
Gate-Source Voltage
V
GS
±
10
±
10
V
Power Dissipation
P
D
W
ºC
1.12
1.12
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
111
Unit
ºC /W
Thermal Resistance, Junction-to-Ambient
R
thJA
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
NMOS Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
=
±
10V
20
—
—
—
—
1
V
μA
uA
V
I
GSS
—
—
±
10
1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 0.65A
V
GS
= 2.5V, I
D
= 0.55A
V
GS
= 1.8V, I
D
= 0.45A
V
DS
=10V,I
D
=0.5A
0.35
—
0.55
159
209
290
1.6
370
450
800
—
Drain-Source On-Resistance
R
DS(on)
—
m
Ω
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
60
15
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 10V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
pC
5
750
75
V
DD
= 10V,
I
D
= 250mA,
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
225
6.7
4.8
17.3
7.4
Turn-on Delay Time
Turn-on Rise Time
V
DD
= 10V,
I
D
= 0.5A,
R
G
= 10
Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
V
SD
T
C
= 25ºC
—
—
—
—
1.36
1.2
A
V
Body Diode Voltage
T
J
= 25ºC, I
SD
= 0.5A, V
GS
= 0V
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
NMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain-Source On-Resistance
Figure 4. Gate Charge
5
4
3
2
1
0
350
300
250
200
150
100
V
GS
=1.8V
V
GS
=2.5V
V
DS
=10V
I
D
=250mA
V
GS
=4.5V
0
0.2
0.4
0.6
0.8
0.3
0.5
0.7
0.9
I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
-Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
NMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
1.6
1.4
1.2
1
V
GS
=10V
I
D
=600mA
0.8
0.6
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
PMOS Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±
10V
-20
—
—
—
—
-1
V
μA
uA
V
I
GSS
—
—
±
10
-0.8
520
700
1000
—
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -0.5A
V
GS
= -2.5V, I
D
= -0.5A
V
GS
= -1.8V, I
D
= -0.5A
V
DS
=-5V,I
D
=-0.6A
-0.35
—
-0.55
375
478
621
1.7
Drain-Source On-Resistance
R
DS(on)
—
m
Ω
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
68.4
17
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -10V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
pC
5.7
855
85.5
256.5
6.5
V
DD
= -10V,
I
D
= -250mA,
V
GS
= -4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= -10V,
I
D
= -0.6A,
R
G
= 3
Ω
6.5
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
18.2
5.5
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
V
SD
T
C
= 25ºC
—
—
—
—
-1.15
-1
A
V
Body Diode Voltage
T
J
= 25ºC, I
SD
= -0.5A, V
GS
= 0V
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
PMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
4
3
2
1
0
25ºC
125ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Rdson-Drain Current
Figure 4. Gate Charge
5
700
600
500
400
300
V
GS
=-1.8V
V
DS
=-10V
I
D
=-250mA
4
3
2
1
0
V
GS
=-2.5V
V
GS
=-4.5V
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
-I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
120
100
80
60
40
20
0
Ciss
Coss
Crss
0
4
8
12
16
20
-Vds Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
PMOS Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
G1NP02ELL
GOFORD
SOT-23-6L Package Information
Dimensions in Millimeters
Symbol
MIN.
NOM.
MAX.
0.10
1.20
0.50
0.20
3.00
1.70
3.00
A1
A2
b
0.00
1.00
0.30
0.10
2.80
1.50
2.60
–
1.10
0.40
c
0.15
D
2.90
E
1.60
E1
e
2.80
0.2GAUGE PLANE
e1
L
–
1.90
–
0.30
0.45
0.60
°
°
8
Θ
0
–
All Dimensions in mm
TEL
：
0755-29961262
FAX:075
5
–
29961466
V2.0-Version
