GOFORD-G2002A
| Part # | GOFORD-G2002A |
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GOFORD
2002A
Description
uses advanced trench technology and
The 2002A
D
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G
General Features
●
V
DSS
R
DS(ON)
(typ)
I
D
S
@
10V
Schematic diagram
2A
200V
5
2
0
m
Ω
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
SOT23-6L
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Drain-Source Voltage
200
V
DS
Gate-Source Voltage
±20
V
V
GS
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
2
A
I
D
8
3
A
I
DM
P
D
Maximum Power Dissipation
W
℃
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
S
T
G
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
41.7
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250
ꢀ
A
200
–
–
–
–
V
V
DS
=200V,V
GS
=0V
1
ꢀ
A
Page
1
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
GOFORD
2002A
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
I
GSS
V
GS
=±20V,V
DS
=0V
–
–
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
ꢀ
A
V
GS
=10V, I
D
=2A
V
DS
=15V,I
D
=2A
1.2
1.7
520
8
2.5
580
–
V
m
ꢁ
S
–
–
C
lss
C
oss
C
rss
–
–
–
580
90
3
–
–
–
PF
PF
PF
V
DS
=25V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
10
12
15
15
12
2.5
3.8
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=100V, R
L
=15
ꢁ
V
GS
=10V,R
G
=2.5
ꢁ
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=100V,I
D
=2A,
V
GS
=10V
Gate-Source Charge
–
–
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltag
e
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2A
–
–
–
–
1.2
2
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
ꢀ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Page
2
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
GOFORD
2002A
Test Circuit
1
）
E
AS
test circuit
2
）
Gate charge test circuit
3
）
Switch Time Test Circuit
Page
3
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
GOFORD
2002A
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Page
4
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
GOFORD
2002A
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 V
GS(th)
vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Page
5
H
T
P
:
/
w
g
f
r
d
s
e
i
.
c
o
m
TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
