GOFORD-G200P04D3
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G200P04D3
P-Channel Enhancement Mode Power MOSFET
Description
The G200P04D3 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
Schematic diagram
l
V
DS
-40V
-20A
< 16mΩ
< 20mΩ
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -4.5V)
l
100% Avalanche Tested
l
RoHS Compliant
pin assignment
Application
l
Power switch
l
DC/DC converters
DFN3X3-8L
Ordering Information
Device
Package
DFN3X3-8L
Marking
Packaging
5000pcs/Reel
G200P04D3
G200P04
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-40
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-20
-80
±
20
A
A
V
(note1)
I
DM
V
GS
Power Dissipation
P
D
30
81
W
Single pulse avalanche energy
（
note2
）
E
AS
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
ºC/W
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
55
4.17
TEL
：
0755-29961263
FAX:0755-29961466(A1654-V1.1)
G200P04D3
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
=
±
20V
-40
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-2.5
16
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -5A
-1.0
—
-1.7
13
17
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
20
g
FS
V
DS
= -6V,I
D
= -5A
—
13
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
2662
222
211
54
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -20V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -40V,
I
D
= -5A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
8
11
Turn-on Delay Time
Turn-on Rise Time
11
V
DD
= -40
V
,
I
D
= -5A,
R
G
= 3Ω
9.4
24
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
12
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-20
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -5A, V
GS
= 0V
Reverse Recovery Charge
20
nC
ns
I
F
= -5A, V
GS
= 0V
di/dt=-500A/us
Reverse Recovery Time
13.3
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1654-V1.1)
G200P04D3
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1654-V1.1)
G200P04D3
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
60
50
40
30
20
10
0
60
50
40
30
20
10
0
-10V
V
DS
= -5V
-4V
-4.5V
-3.5V
25
℃
-3V
V
GS
= -2.5V
0
2
4
6
8
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
25
20
15
10
5
10
8
V
DD
= -40V
I
D
= -5A
6
V
GS
= -4.5V
V
GS
= -10V
4
2
0
0
0
2
4
6
8
10
0
10
20
30
40
50
60
-I
D
-Drain Current (A)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
3500
3000
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
10
20
30
40
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1654-V1.1)
G200P04D3
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V,
I
D
= -5A
V
GS
= -4.5V,
I
D
= -5A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
4.17
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1654-V1.1)
G200P04D3
DFN3x3-8L Package Information
D1
A
D2
E3
θ
E5
E2
E4
t
E1 E
K
b
L
c
e
L1
D
D
A1
COMMON
MM
SYMBOL
MIN
0.70
NOM
0.75
MAX
A
A1
b
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14。
–
–
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12。
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
K
0.59
0.30
0.06
0
L
L1
t
θ
10。
TEL
：
0755-29961263
FAX:0755-29961466(A1654-V1.1)
