GOFORD-G20P10KE

G20P10KE  

P-Channel Enhancement Mode Power MOSFET  

Description  

The G20P10KE uses advanced trench technology to  

provide excellent R

DS(ON)

, low gate charge. It can be used in  

a wide variety of applications.  

General Features  

l

V

DS  

l

I

D

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -10V)  

-100V  

-20A  

< 116mΩ  

Schematic diagram  

l

100% Avalanche Tested  

l

RoHS Compliant  

l

ESD (HBM)>7.0KV  

Application  

l

Power switch  

l

DC/DC converters  

TO-252  

Ordering Information  

Device  

Package  

Marking  

Packaging  

2500pcs/Reel  

G20P10KE  

TO-252  

G20P10KE  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

-100  

V

Continuous Drain Current  

Pulsed Drain Current  

Gate-Source Voltage  

I

D  

-20  

-80  

±

20  

A

A

V

(note1)  

I

DM  

V

GS  

Power Dissipation  

P

D  

69  

56  

W

Single pulse avalanche energy  

（

note2

）  

E

AS  

mJ  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

ºC  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

ºC/W  

ºC/W  

Thermal Resistance, Junction-to-Ambient  

Maximum Junction-to-Case  

R

thJA  

R

thJC  

25  

1.8  

TEL

：

0755-29961263  

FAX:0755-29961466(A1418)  

G20P10KE  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

V

DS

= -100V, V

GS

= 0V  

V

GS

=

±

20V  

-100  

—  

—  

—  

—  

-1  

V

μA  

uA  

V

I

GSS  

—  

—  

±

10  

-3  

Gate-Source Threshold Voltage  

Drain-Source On-Resistance  

V

GS(th)  

R

DS(on)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -16A  

-1  

—  

-1.5  

94  

116  

mΩ  

g

FS  

V

DS

= -5V,I  

D

= -16A  

—  

35  

—  

S

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

3354  

89  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= -50V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

87  

70  

V

DD

= -50V,  

I

D

= -16A,  

V

GS

= -10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

12.5  

15.5  

16  

Turn-on Delay Time  

Turn-on Rise Time  

V

DD

= -50

V

,  

I

D

= -16A,  

R

G

= 9Ω  

73  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

34  

57  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

V

SD  

Q

rr  

T

rr  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

-20  

-1.2  

—  

A

V

T

J

= 25ºC, I

SD

= -16A, V

GS

= 0V  

Reverse Recovery Charge  

66  

88  

nC  

ns  

I

F

= -16A, V

GS

= 0V  

di/dt=-500A/us  

Reverse Recovery Time  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. EAS

 

condition : Tj=25

℃

,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω  

3. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466(A1418)  

G20P10KE  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466(A1418)  

G20P10KE  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

20  

18  

16  

14  

12  

10  

8

30  

25  

20  

15  

10  

5

-10V  

-4.5V  

V

DS

= -5V  

-3.5V  

-3V  

25

℃

 

-2.7V  

6

4

V

GS

= -2.5V  

2

0

0

0

1

2

3

4

0

1

2

3

4

5

6

-V

DS

, Drain-to-Source Voltage (V)  

-V

GS

, Gate-to-Source Voltage (V)  

Figure 3.Drain Source On Resistance  

Figure 4. Gate Charge  

160  

140  

120  

100  

80  

10  

8

V

DD

= -50V,  

I

D

= -16A  

6

4

V

GS

= -10V  

2

60  

40  

0

0

10  

20  

30  

40  

0

20  

40  

60  

80  

-I

D

-Drain Current (A)  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

4500  

4000  

3500  

3000  

2500  

2000  

1500  

1000  

500  

Ciss  

Coss  

10  

Crss  

0

0

20  

30  

40  

50  

60  

-V

DS

Drain-Source Voltage(V)  

-V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1418)  

G20P10KE  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 10. Safe Operation Area  

Figure 7. Drain-Source On-Resistance  

V

GS

= -10V,  

I

D

= -16A  

T

J

, Junction Temperature (

º

C)  

-V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

1.8

°

C/W  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1418)  

G20P10KE  

TO-252 Package Mechanical Data  

Dimensions in Millimeters  

Symbol  

MIN.  

2.2  

NOM.  

2.3  

MAX.  

2.4  

A

A1  

A2  

b

ꢀ

0

0.2  

0.97  

0.68  

5.2  

1.07  

0.78  

5.33  

0.53  

6.1  

1.17  

0.9  

b3  

c

5.5  

0.43  

5.98  

0.63  

6.22  

D

D1  

E

5.30REF  

6.6  

6.4  

6.8  

ꢀ

ꢀ

E1  

e

4.63  

2.286BSC  

H

9.4  

10.1  

1.5  

10.5  

1.75  

L

1.38  

L1  

L2  

L3  

L4  

L5  

θ

2.90REF  

0.51BSC  

ꢀ

0.88  

0.5  

1.28  

1

ꢀ

1.65  

1.8  

1.95  

°

0

ꢀ

°

8

TEL

：

0755-29961263  

FAX:0755-29961466(A1418)