GOFORD-G2305
| Part # | GOFORD-G2305 |
Download  | GOFORD-G2305 |
G2305
P-Channel Enhancement Mode Power MOSFET
Description
The G2305 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
l
V
DS
-20V
-4.8A
< 50mΩ
< 70mΩ
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -4.5V)
l
100% Avalanche Tested
l
RoHS Compliant
Application
pin Assignment
l
Power switch
l
DC/DC converters
SOT-23
Ordering Information
Device
Package
Marking
Packaging
3000pcs/Reel
G2305
SOT-23
G2305
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-20
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
-4.8
-15
A
A
(note1)
Gate-Source Voltage
V
GS
±
12
V
Power Dissipation
P
D
1.7
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
74
TEL
：
0755-29961263
FAX:0755-29961466
G2305
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±
8V
-20
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-1.0
50
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5V, I
D
= -3A
-0.45
—
-0.7
45
60
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
70
g
FS
V
DS
= -5V,I
D
= -3.5A
—
8.5
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
740
290
190
7.8
1.2
1.6
12
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -4V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -4V,
I
D
= -4.1A,
V
GS
= -4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= -4
V
,
I
D
= -3.3A,
R
G
= 1Ω
35
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
30
10
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
-1.6
-1.2
A
V
V
SD
T
J
= 25ºC, I
SD
= -20A, V
GS
= 0V
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. EAS
condition : Tj=25
℃
,VDD=-20V,VGS=-10V,L=0.5mH,Rg=25Ω
TEL
：
0755-29961263
FAX:0755-29961466
G2305
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
G2305
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
-I
D
-Drain Current (A)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
FAX:0755-29961466
TEL
：
0755-29961263
G2305
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V
I
D
= -4.1A
V
GS
= -4.5V
I
D
= -3A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
74
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
