GOFORD-G230P06K

Part #GOFORD-G230P06K
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GOFORD-G230P06K
G230P06K  
P-Channel Enhancement Mode Power MOSFET  
Description  
The G230P06K uses advanced trench technology to provide  
excellent R

DS(ON)

, low gate charge. It can be used in a wide  
variety of applications.  
General Features  
l
V

DS  

l
I

D

(at V

GS

= -10V)  
l
R

DS(ON)

(at V

GS

= -10V)  
-60V  
-60A  
< 20mΩ  
Schematic diagram  
l
100% Avalanche Tested  
l
RoHS Compliant  
Application  
l
Power switch  
l
DC/DC converters  
TO-252  
Ordering Information  
Device  
Package  
TO-252  
Marking  
Packaging  
2500pcs/Reel  
G230P06K  
G230P06  
Absolute Maximum Ratings
 
T

C

= 25ºC, unless otherwise noted  
Parameter  
Symbol  
Value  
Unit  
Drain-Source Voltage  
V

DS  

-60  
V
Continuous Drain Current  
Pulsed Drain Current  
Gate-Source Voltage  
I

D  

-60  
-240  
±
20  
A
A
V
(note1)  
I

DM  

V

GS  

Power Dissipation  
P

D  

115  
81  
W
Single pulse avalanche energy  
(
note2
)  
E

AS  

mJ  
Operating Junction and Storage Temperature Range  
T

J

, T

stg  

-55 To 150  
ºC  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
ºC/W  
ºC/W  
Thermal Resistance, Junction-to-Ambient  
Maximum Junction-to-Case  
R

thJA  

R

thJC  

60  
1.09  
TEL
:
0755-29961263  
FAX:0755-29961466(A1726-V1.0)  

G230P06K  
Specifications
T

J

= 25ºC, unless otherwise noted  
Value  
Parameter  
Symbol  
Test Conditions  
Unit  
Min.  
Typ.  
Max.  
Static Parameters  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  
V

DS

= -60V, V

GS

= 0V  
V

GS

=
±
20V  
-60  
—  
—  
—  
—  
-1  
V
μA  
nA  
V
I

GSS  

—  
—  
±
100  
-4  
Gate-Source Threshold Voltage  
Drain-Source On-Resistance  
V

GS(th)  

R

DS(on)  

V

DS

= V

GS

, I

D

= -250µA  
V

GS

= -10V, I

D

= -10A  
-2  
—  
-2.5  
17  
20  
mΩ  
g

FS  

V
DS
= -5V,I  
D
= -12A  
—  
15  
—  
S
Forward Transconductance  
Dynamic Parameters  
Input Capacitance  
C

iss  

C

oss  

C

rss  

Q

g  

—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
4581  
240  
238  
62  
—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
V

GS

= 0V,  
V

DS

= -30V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
pF  
nC  
V

DD

= -30V,  
I

D

= -10A,  
V

GS

= -10V  
Gate-Source Charge  
Gate-Drain Charge  
Turn-on Delay Time  
Turn-on Rise Time  
Turn-off Delay Time  
Turn-off Fall Time  
Q

gs  

Q

gd  

t

d(on)  

t

r  

9
16  
20  
V

DD

= -30
V
,  
I

D

= -10A,  
R

G

= 3Ω  
18  
ns  
t

d(off)  

t

f  

55  
35  
Drain-Source Body Diode Characteristics  
Continuous Body Diode Current  
Body Diode Voltage  
I

S  

V

SD  

Q

rr  

T
rr  
T

C

= 25ºC  
—  
—  
—  
—  
—  
—  
-60  
-1.2  
—  
A
V
T

J

= 25ºC, I

SD

= -10A, V

GS

= 0V  
Reverse Recovery Charge  
71  
49  
nC  
ns  
I

F

= -10A, V

GS

= 0V  
di/dt=-100A/us  
Reverse Recovery Time  
—  
Notes  
1. Repetitive
 
Rating: Pulse width limited by maximum junction temperature  
2. EAS
 
condition : Tj=25
℃
,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω  
3. Identical
 
low side and high side switch with identical R

G  

TEL
:
0755-29961263  
FAX:0755-29961466(A1726-V1.0)  

G230P06K  
Gate Charge Test Circuit  
Switch Time Test Circuit  
EAS Test Circuit  
TEL
:
0755-29961263  
FAX:0755-29961466(A1726-V1.0)  

G230P06K  
Typical Characteristics
 
T

J

= 25
º
C, unless otherwise noted  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
-10V  
-5.5V  
V
DS
= -5V  
-5V  
-4.5V  
25
℃
 
-4V  
V
GS
= -3.5V  
0
0
0
1
2
3
4
0
2
4
6
8
-V

DS

, Drain-to-Source Voltage (V)  
-V

GS

, Gate-to-Source Voltage (V)  
Figure 3.Drain Source On Resistance  
Figure 4. Gate Charge  
22  
20  
18  
16  
14  
12  
10  
10  
8
V

DD

= -30V,  
I

D

= -10A  
6
V
GS
= -10V  
4
2
0
5
10  
15  
20  
0
20  
40  
60  
80  
-I

D

-Drain Current (A)  
Qg Gate Charge
(
nC
)  
Figure 5. Capacitance  
Figure 6. Source-Drain Diode Forward  
6000  
5000  
4000  
3000  
2000  
1000  
0
Ciss  
Coss  
Crss  
10  
20  
30  
40  
50  
60  
-V

DS

Drain-Source Voltage(V)  
-V

SD

, Source-to-Drain Voltage (V)  
TEL
:
0755-29961263  
FAX:0755-29961466(A1726-V1.0)  

G230P06K  
Typical Characteristics
 
T

J

= 25
º
C, unless otherwise noted  
Figure 10. Safe Operation Area  
Figure 7. Drain-Source On-Resistance  
V

GS

= -10V,  
I

D

= -10A  
T

J

, Junction Temperature (
º
C)  
-V

DS

, Drain-Source Voltage(V)  
Figure 9. Normalized Maximum Transient  
Thermal Impedance  
1.09
°
C/W  
Pulse Width (s)  
TEL
:
0755-29961263  
FAX:0755-29961466(A1726-V1.0)  

G230P06K  
TO-252 Package
 
Information  
E
b3  
c
E1  
b
e
L
(L1)  
COMMON DIMENSIONS  
mm  
SYMBOL  
MIN  
NOM  
MAX  
A
A1  
A2  
b
2.20  
0.00  
0.97  
0.68  
5.20  
0.43  
5.98  
2.30  
–
2.40  
0.20  
1.17  
0.90  
5.50  
0.63  
6.22  
1.07  
0.78  
5.33  
0.53  
6.10  
5.30REF  
6.60  
–
b3  
c
D
D1  
E
6.40  
4.63  
6.80  
–
E1  
e
2.286BSC  
10.10  
1.50  
2.90REF  
0.51BSC  
–
H
9.40  
1.38  
10.50  
1.75  
L
L1  
L2  
L3  
L4  
L5  
θ
0.88  
0.50  
1.65  
1.28  
1.00  
1.95  
8
°  
–
1.80  
–
0
°  
TEL
:
0755-29961263  
FAX:0755-29961466(A1726-V1.0)