GOFORD-G2312
| Part # | GOFORD-G2312 |
Download  | GOFORD-G2312 |
G2312
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G2312 uses
advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
20V
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 4.5V)
5A
< 18m
Ω
< 20m
Ω
⚫
100% Avalanche Tested
⚫
RoHS Compliant
Marking and pin assignment
Application
⚫
Power switch
⚫
DC/DC converters
SOT-23
Marking
Device
Package
SOT-23
Packaging
G2312
G2312
3000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
20
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
5
20
A
A
(note1)
Gate-Source Voltage
V
GS
±
12
V
Power Dissipation
P
D
1.25
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Ambient
R
thJA
100
TEL
：
0755-29961263
FAX:0755-29961466
G2312
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
=
±
12V
20
—
—
—
—
V
uA
nA
V
1
±
100
1
I
GSS
—
—
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.2A
V
GS
= 4.5V, I
D
= 4A
V
GS
= 2.5V, I
D
= 1A
V
DS
=15V,I
D
=5A
0.4
—
0.7
12
13
14
—
18
m
Ω
Drain-Source On-Resistance
R
DS(on)
—
20
—
27
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
25
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
780
140
80
11
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 10V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 10V,
I
D
= 5A,
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
2.3
2.9
9
Turn-on Delay Time
Turn-on Rise Time
V
DD
= 10V,
I
D
= 1A,
R
G
= 6
Ω
30
35
10
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
V
SD
T
C
= 25ºC
—
—
—
—
5
A
V
Body Diode Voltage
T
J
= 25ºC, I
SD
= 1A, V
GS
= 0V
1.2
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466
G2312
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
G2312
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
125
℃
25
℃
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Gate Charge
Figure 4. Drain Source On Resistance
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
Qg Gate Charge
（
nC
）
ID-Drain Current
（
A
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
FAX:0755-29961466
TEL
：
0755-29961263
G2312
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
GOFORD
G2312
SOT-23 Package Information
Symbol
Dimensions in Millimeters
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0.500
°
°
8
0
TEL
：
0755-29961263
FAX:0755-29961466
