GOFORD-G26N02K

G26N02K  

GOFORD  

N-Channel Enhancement Mode Power MOSFET  

Description  

The G26N02K uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

General Features  

⚫

V

DS  

⚫

I

D

(at V

GS

= 10V)  

⚫

R

DS(ON)

(at V

GS

= 4.5V)  

20V  

26A  

< 11.3m

Ω  

Schematic diagram  

⚫

R

DS(ON)

(at V

GS

= 2.5V)  

⚫

100% Avalanche Tested  

⚫

RoHS Compliant  

< 14.1m

Ω  

Application  

⚫

Power switch  

⚫

DC/DC converters  

TO-252  

Marking  

Device  

Package  

Packaging  

2500pcs/Reel  

G26N02K  

TO-252  

G26N02  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

20  

V

Continuous Drain Current  

Pulsed Drain Current  

Gate-Source Voltage  

I

D  

26  

A

A

V

(note1)  

(note3)  

I

DM  

V

GS  

100  

±

12  

Single Pulse Avalanche Energy  

Power Dissipation  

E

AS  

P

D  

43  

33  

mJ  

W

Operating Junction and Storage Temperature Range  

Thermal Resistance  

T

J

, T

stg  

-55 To 150  

ºC  

Parameter  

Symbol  

Value  

Unit  

ºC /W  

Thermal Resistance, Junction-to-Case  

R

thJC  

3.8  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1159

）  

G26N02K  

GOFORD  

Specifications

T

J

= 25ºC

 

, unless otherwise noted  

Value  

Typ.  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 20V, V

GS

= 0V  

V

GS

=

±

12V  

20  

—  

—  

—  

—  

1

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

0.9  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 4.5V, I

D

= 3A  

V

GS

= 2.5V, I

D

= 3A  

V

DS

=5V,I

D

=3A  

0.5  

—  

0.7  

9

11.3  

14.1  

—  

Drain-Source On-Resistance  

R

DS(on)  

m

Ω  

—  

11  

—  

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

g

FS  

10  

S

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

777  

164  

140  

26  

3

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 10V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DD

= 10V,  

I

D

= 3A,  

V

GS

= 4.5V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

5

Turn-on Delay Time  

Turn-on Rise Time  

4

V

DD

= 10

V

,  

I

D

= 3A,  

R

G

= 3

Ω  

28  

16  

26  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

26  

1.2  

—  

A

V

V

SD  

T

rr  

T

J

= 25ºC, I

SD

= 3A, V

GS

= 0V  

Reverse Recovery Time  

18  

10  

ns  

nc  

I

S

= 3A, V

GS

= 0V  

di/dt=-100A/us  

Reverse Recovery Charge  

Qrr  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. Identical

 

low side and high side switch with identical R

G  

3. V

DD

= 20V, R

G

= 25Ω,

 

L=0.5

mH, Starting T

J

= 25

°

C

。  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1159

）  

G26N02K  

GOFORD  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1159

）  

G26N02K  

GOFORD  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

V

DS

, Drain-to-Source Voltage (V)  

V

GS

, Gate-to-Source Voltage (V)  

Figure 3. Gate Charge  

Figure 4. Drain Source On Resistance  

V

DD

= 10V  

I

D

= 3A  

V

GS

=2.5V  

V

GS

=4.5V  

Qg Gate Charge

（

nC

）  

ID-Drain Current

（

A

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

Vds Drain-Source Voltage(V)  

V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1159

）  

G26N02K  

GOFORD  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 8. Safe Operation Area  

Figure 7. Drain-Source On-Resistance  

V

GS

= 4.5V  

I

D

= 3A  

T

J

, Junction Temperature (

º

C)  

V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

D=T

on

/T  

T

J,PK

=T

A

+P

DM

.Z

θ

JA.

R

θ

JA  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1159

）  

G26N02K  

GOFORD  

TO-252 Package Information  

Dimensions in Millimeters  

Symbol  

MIN.  

2.2  

0

NOM.  

2.3  

MAX.  

2.4  

A

A1  

A2  

b

0.2  

0.97  

1.07  

1.17  

0.68  

5.2  

0.78  

5.33  

0.9  

5.5  

b3  

c

0.43  

5.98  

0.53  

0.63  

6.22  

D

6.1  

D1  

E

5.30REF  

6.6  

6.4  

6.8  

E1  

e

4.63  

2.286BSC  

10.1  

H

9.4  

10.5  

1.75  

L

1.38  

1.5  

L1  

L2  

L3  

L4  

L5  

θ

2.90REF  

0.51BSC  

0.88  

0.5  

1.28  

1

1.65  

1.8  

1.95  

°

8

°

0

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1159

）