GOFORD-G28N03D3

Part #GOFORD-G28N03D3
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GOFORD-G28N03D3
G28N03D3  
N-Channel Enhancement Mode Power MOSFET  
Description  
The G28N03D3 uses advanced trench technology to  
provide excellent R

DS(ON)

, low gate charge. It can be used in  
a wide variety of applications.  
General Features  
Schematic diagram  
l
V

DS  

30V  
28A  
< 12mΩ  
< 18mΩ  
l
I

D

(at V

GS

= 10V)  
l
R

DS(ON)

(at V

GS

= 10V)  
l
R

DS(ON)

(at V

GS

= 4.5V)  
l
100% Avalanche Tested  
l
RoHS Compliant  
pin assignment  
Application  
l
Power switch  
l
DC/DC converters  
DFN3X3-8L  
Ordering Information  
Device  
Package  
DFN3X3-8L  
Marking  
Packaging  
5000psc/Reel  
G28N03D3  
G28N03  
Absolute Maximum Ratings
 
T

C

= 25ºC, unless otherwise noted  
Parameter  
Symbol  
Value  
Unit  
Drain-Source Voltage  
V

DS  

30  
V
Continuous Drain Current  
Pulsed Drain Current  
I

D  

I

DM  

28  
112  
A
A
(note1)  
Gate-Source Voltage  
V

GS  

±
20  
V
Power Dissipation  
P

D  

23  
W
ºC  
Operating Junction and Storage Temperature Range  
T

J

, T

stg  

-55 To 150  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance, Junction-to-Ambient  
Maximum Junction-to-Case  
R

thJA  

R

thJC  

65  
ºC/W  
ºC/W  
5.4  
TEL
:
0755-29961263  
FAX:0755-29961466(A1531)  

G28N03D3  
Specifications
T

J

= 25ºC, unless otherwise noted  
Value  
Typ.  
Parameter  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
Static Parameters  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  
V

DS

= 30V, V

GS

= 0V  
V

GS

=
±
20V  
30  
—  
—  
1
—  
—  
—  
1
V
μA  
nA  
V
I

GSS  

—  
±
100  
2.5  
12  
Gate-Source Threshold Voltage  
V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  
V

GS

= 10V, I

D

= 16A  
V

GS

= 4.5V, I

D

= 14A  
2
—  
—  
6.5  
15  
Drain-Source On-Resistance  
R

DS(on)  

mΩ  
S
18  
g

FS  

V

GS

= 5V, I

D

= 10A  
—  
2.5  
—  
Forward Transconductance  
Dynamic Parameters  
Input Capacitance  
C

iss  

C

oss  

C

rss  

Q

g  

—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
896  
145  
129  
20  
—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
V

GS

= 0V,  
V

DS

= 15V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
pF  
nC  
V

DD

= 15V,  
I

D

= 16A,  
V

GS

= 10V  
Gate-Source Charge  
Gate-Drain Charge  
Q

gs  

Q

gd  

t

d(on)  

t

r  

2.5  
4.9  
28  
Turn-on Delay Time  
Turn-on Rise Time  
V

DD

= 15
V
,  
I

D

= 16A,  
R

G

= 3Ω  
15  
ns  
Turn-off Delay Time  
Turn-off Fall Time  
t

d(off)  

t

f  

28  
14  
Drain-Source Body Diode Characteristics  
Continuous Body Diode Current  
Body Diode Voltage  
I

S  

T

C

= 25ºC  
—  
—  
—  
—  
—  
—  
28  
1.2  
—  
A
V
V

SD  

T

J

= 25ºC, I

SD

= 16A, V

GS

= 0V  
Reverse Recovery Charge  
10.5  
25  
nC  
ns  
Q
rr  
T
rr  
I

F

= 16A, V

GS

= 0V  
di/dt=100A/us  
Reverse Recovery Time  
—  
Notes  
1. Repetitive
 
Rating: Pulse width limited by maximum junction temperature  
2. EAS
 
condition : Tj=25
℃
,VDD= 30V,VGS=10V,L=0.5mH,Rg=25Ω  
3. Identical
 
low side and high side switch with identical R

G  

TEL
:
0755-29961263  
FAX:0755-29961466(A1531)  

G28N03D3  
Gate Charge Test Circuit  
Switch Time Test Circuit  
EAS Test Circuit  
TEL
:
0755-29961263  
FAX:0755-29961466(A1531)  

G28N03D3  
Typical Characteristics
 
T

J

= 25
º
C, unless otherwise noted  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
V
DS
= 5V  
10V  
7V  
6V  
5.5V  
5V  
25
℃
 
V
GS
=4.5V  
0
2
4
6
8
10  
0
1
2
3
4
V

DS

, Drain-to-Source Voltage (V)  
V

GS

, Gate-to-Source Voltage (V)  
Figure 3. Drain Source On Resistance  
Figure 4. Gate Charge  
20  
15  
10  
5
10  
8
V

DD

= 15V,  
I

D

= 16A  
6
V
GS
= 4.5V  
V
GS
= 10V  
4
2
0
0
0
8
16  
24  
32  
40  
0
5
10  
15  
20  
I

D

-Drain Current
(
A
)  
Qg Gate Charge
(
nC
)  
Figure 5. Capacitance  
Figure 6. Source-Drain Diode Forward  
1400  
1200  
1000  
800  
600  
400  
200  
0
Ciss  
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
V

DS

Drain-Source Voltage(V)  
V

SD

, Source-to-Drain Voltage (V)  
TEL
:
0755-29961263  
FAX:0755-29961466(A1531)  

G28N03D3  
Typical Characteristics
 
T

J

= 25
º
C, unless otherwise noted  
Figure 7. Drain-Source On-Resistance  
Figure 8. Safe Operation Area  
V

GS

= 10V,  
I

D

= 16A  
V

GS

= 4.5V,  
I

D

= 14A  
T

J

, Junction Temperature (
º
C)  
V

DS

, Drain-Source Voltage(V)  
Figure 9. Normalized Maximum Transient  
Thermal Impedance  
5.4
°
C/W  
Pulse Width (s)  
TEL
:
0755-29961263  
FAX:0755-29961466(A1531)  

G28N03D3  
DFN3x3-8L Package Information  
D1  
A
D2  
E3  
θ
E5  
E2  
E4  
t
E1 E  
K
b
L
c
e
L1  
D
D
A1  
COMMON  
MM  
SYMBOL  
MIN  
0.70  
NOM  
0.75  
MAX  
A
A1  
b
0.85  
0.05  
0.40  
0.25  
3.45  
3.25  
2.65  
3.45  
3.20  
1.94  
0.65  
0.77  
0.30  
0.70  
0.89  
0.50  
0.20  
0.13  
14。  
–
–
0.20  
0.10  
3.15  
3.00  
2.29  
3.15  
2.90  
1.54  
0.28  
0.37  
0.10  
0.60  
0.30  
0.152  
3.30  
3.15  
2.45  
3.30  
3.05  
1.74  
0.48  
0.57  
0.20  
0.65  
0.69  
0.40  
0.125  
0.075  
12。  
c
D
D1  
D2  
E
E1  
E2  
E3  
E4  
E5  
e
K
0.59  
0.30  
0.06  
0
L
L1  
t
θ
10。  
TEL
:
0755-29961263  
FAX:0755-29961466(A1531)