GOFORD-G2K2P10S2E

G2K2P10S2E  

Dual P-Channel Enhancement Mode Power MOSFET  

Description  

D2  

D1  

The G2K2P10S2E uses advanced trench technology to  

provide excellent R

DS(ON)

, low gate charge. It can be used in  

a wide variety of applications.  

G2  

G1  

S2  

S1  

General Features  

Schematic diagram  

l

V

DS  

-100V  

-3.5A  

< 200mΩ  

< 220mΩ  

l

I

D

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -4.5V)  

l

100% Avalanche Tested  

l

RoHS Compliant  

l

ESD (HBM)>7KV  

pin assignment  

Application  

l

Power switch  

l

DC/DC converters  

SOP-8  

Ordering Information  

Device  

Package  

Marking  

G2K2P10S2  

Packaging  

4000pcs/Reel  

G2K2P10S2E  

SOP-8 Dual  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

-100  

V

Continuous Drain Current  

Pulsed Drain Current  

Gate-Source Voltage  

I

D  

-3.5  

-14  

A

A

V

(note1)  

I

DM  

V

GS  

±

20  

Power Dissipation  

P

D  

3.1  

25  

W

Single pulse avalanche energy  

（

note2

）  

E

AS  

mJ  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

ºC  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

ºC/W  

Thermal Resistance, Junction-to-Ambient  

R

thJA  

40  

TEL

：

0755-29961263  

FAX:0755-29961466(A1627)  

G2K2P10S2E  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

V

DS

= -100V, V

GS

= 0V  

V

GS

=

±

20V  

-100  

—  

—  

—  

—  

-1  

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

-2.5  

200  

220  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -3A  

V

GS

= -4.5V, I

D

= -2A  

-1  

—  

-1.6  

170  

180  

Drain-Source On-Resistance  

R

DS(on)  

mΩ  

S

—  

g

FS  

V

DS

= -5V,I  

D

= -3A  

—  

10  

—  

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

1623  

43  

42  

23  

4.2  

5.2  

24  

5

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= -50V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DD

= -50V,  

I

D

= -3A,  

V

GS

= -10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Turn-on Delay Time  

Turn-on Rise Time  

V

DD

= -50

V

,  

I

D

= -3A,  

R

G

= 3Ω  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

19  

11  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

V

SD  

Q

rr  

T

rr  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

-3.5  

-1.2  

—  

A

V

T

J

= 25ºC, I

SD

= -3A, V

GS

= 0V  

Reverse Recovery Charge  

22  

29  

nC  

ns  

I

F

= -3A, V

GS

= 0V  

di/dt=-100A/us  

Reverse Recovery Time  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. EAS

 

condition : Tj=25

℃

,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω  

3. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466(A1627)  

G2K2P10S2E  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466(A1627)  

G2K2P10S2E  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

10  

9

8

7

6

5

4

3

2

1

0

10  

9

8

7

6

5

4

3

2

1

0

-3.2V  

-3V  

-10V  

-4.5V  

-3.5V  

V

DS

= -5V  

V

GS

= -2.8V  

25

℃

 

0

1

2

3

4

0

1

2

3

4

5

6

-V

DS

, Drain-to-Source Voltage (V)  

-V

GS

, Gate-to-Source Voltage (V)  

Figure 3.Drain Source On Resistance  

Figure 4. Gate Charge  

10  

8

300  

250  

200  

150  

100  

50  

V

DD

= -50V,  

I

D

= -3A  

6

V

GS

= -4.5V  

V

GS

= -10V  

4

2

0

0

5

10  

15  

20  

25  

0

3

6

9

12  

-I

D

-Drain Current (A)  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

2500  

2000  

1500  

1000  

500  

Ciss  

Coss  

10  

Crss  

0

0

20  

30  

40  

50  

60  

-V

DS

Drain-Source Voltage(V)  

-V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1627)  

G2K2P10S2E  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 10. Safe Operation Area  

Figure 7. Drain-Source On-Resistance  

V

GS

= -10V,  

I

D

= -3A  

V

GS

= -4.5V,  

I

D

= -2A  

T

J

, Junction Temperature (

º

C)  

-V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

40

°

C/W  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1627)  

G2K2P10S2E  

SOP-8 Dual Package Information  

Dimensions in Millimeters  

Symbol  

ꢀ

MIN.  

NOM.  

6.000  

MAX.  

A

A1  

B

5.800  

4.800  

6.200  

5.000  

4.900  

1.270BSC  

0.40^8x  

3.880  

B1  

C

0.35^8x  

3.780  

—  

0.45^8x  

3.980  

0.253  

0.250  

1.550  

1.700  

1.700  

C1  

D

0.203  

0.050  

1.350  

1.500  

1.500  

0.150  

D1  

D2  

D2  

E

1.450  

1.600  

1.600  

1.060REF  

0.700  

E1  

F

0.400  

0.100  

0.250BSC  

°

2

°

4

°

6

F1  

TEL

：

0755-29961263  

FAX:0755-29961466(A1627)