GOFORD-G3035

GOFORD  

G3035  

Description  

D

The G3035

 

uses advanced trench technology to provide  

excellent R

DS(ON)

, This device is suitable for use as a load  

switch or in PWM applications.  

G

General Features  

●

S

Schematic diagram  

V

DSS  

R

DS(ON)

R

DS(ON)  

(Typ) (Typ)  

I

D

 

@

@

-10V  

-4.5V  

-4.1  

A

-30V  

5

9

m

Ω

 

8

4

m

Ω  

G3035  

●

High power and current handing capability  

●

RoHS Compliant  

Marking and pin assignment  

●

Surface mount package  

Application  

●

PWM applications  

●

Load switch  

●

Power management  

SOT-23  

Ordering Information  

Part Number  

Marking  

Case  

Packaging  

G3035  

G3035  

SOT-23  

3000pcs/Reel  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Limit  

-30  

Unit  

V

Drain-Source Voltage  

V

DS  

Gate-Source Voltage  

±20  

V

V

GS  

Drain Current-Continuous  

Drain Current-Pulsed

(Note 1)  

-4.1  

A

I

D  

-16  

A

I

DM  

Maximum Power Dissipation  

1.4  

W

℃

P

D  

Operating Junction and Storage Temperature Range  

-55

T

o

1

50  

T

J

,T

STG  

Thermal Characteristic  

Thermal Resistance,Junction-to-Ambient

(Note 2)  

R

θ

JA  

90  

℃

/W  

Electrical Characteristics (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ

 

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=-250

μ

A  

-30  

–

–

–

V

V

DS

=-30V,V

GS

=0V  

–

-0.3  

μ

A  

TEL

：

0755-29961263  

FAX:075

5

–

29961466  

(HD)  

GOFORD  

G3035  

Parameter  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

Gate Threshold Voltage  

Symbol  

Condition  

Min Typ

 

Max  

Unit  

I

GSS  

V

GS

=±20V,V

DS

=0V  

–

–

±100  

nA  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=-250

μ

A  

-1  

–

-1.45  

48  

59  

–

-2  

59  

75  

–

V

m

Ω  

m

Ω  

S

V

GS

=-10V, I

D

=-2.1A  

Drain-Source On-State Resistance  

V

–

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

V

DS

=-5V,I

D

=-4.1A  

5.5  

C

lss  

C

oss  

C

rss  

–

–

–

650  

105  

65  

–

–

–

PF  

PF  

PF  

V

Output Capacitance  

F=1.0MHz  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

8.5  

4.5  

–

–

–

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

V

Turn-Off Delay Time  

26  

Turn-Off Fall Time  

12.5  

12.5  

2.8  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

V

DS

=-15V,I

D

=-4A,V

GS

=-10V  

V

GS

=0V,I

S

=-2A  

Gate-Source Charge  

Gate-Drain Charge  

2.7  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

V

SD  

–

–

-1.2  

V

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t

≤

10 sec.  

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

4.

Guaranteed by design, not subject to production  

TEL

：

0755-29961263  

FAX:075

5

–

29961466  

(HD)  

GOFORD  

G3035  

Typical Electrical and Thermal Characteristics  

t

on  

t

r  

t

off  

t

f  

t

d(on)  

V

OUT  

V

IN  

t

d(off)  

90%  

90%  

INVERTED  

10%  

90%  

10%  

50%  

50%  

10%  

PULSE WIDTH  

Figure 1:Switching Test Circuit  

Figure 2:Switching Waveforms  

T

J

-Junction

T

e

mperature(

℃

)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 3 Power Dissipation  

Figure 4 Drain Current  

Vds Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Figure 5 Output Characteristics  

Figure 6 Drain-Source On-Resistance  

TEL

：

0755-29961263  

FAX:075

5

–

29961466  

(HD)  

GOFORD  

G3035  

Vgs Gate-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Transfer Characteristics  

Figure 8 Drain-Source On-Resistance  

Vgs Gate-Source Voltage (V)  

Vds Drain-Source Voltage (V)  

Figure 9 Rdson vs Vgs  

Figure 10 Capacitance vs Vds  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 11 Gate Charge  

Figure 12 Source- Drain Diode Forward  

TEL

：

0755-29961263  

FAX:075

5

–

29961466  

(HD)  

GOFORD  

G3035  

Vds Drain-Source Voltage (V)  

Figure 13 Safe Operation Area  

Square Wave Pluse Duration(sec)  

Figure 14 Normalized Maximum Transient Thermal Impedance  

TEL

：

0755-29961263  

FAX:075

5

–

29961466  

(HD)  

GOFORD  

G3035  

SOT-23 Package information  

A

E

K

B

J

D

G

H

C

SOT-23  

Dim  

A

MIN  

2.80  

1.20  

0.90  

0.39  

NOM  

2.90  

1.30  

1.00  

0.40  

MAX  

3.00  

1.40  

1.10  

0.45  

B

C

D

E

0.20MIN  

1.90REF  

–

G

H

J

0.00  

0.05  

2.30  

0.10  

0.15  

2.50  

0.10  

K

2.40  

All Dimensions in mm  

TEL

：

0755-29961263  

FAX:075

5

–

29961466  

(HD)