GOFORD-G30N03D3
| Part # | GOFORD-G30N03D3 |
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G30N03D3
N-Channel Enhancement Mode Power MOSFET
Description
The G30N03D3 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
30V
30A
⚫
⚫
⚫
I
D
(at V
GS
= 10V)
R
DS(ON)
(at V
GS
= 10V)
R
DS(ON)
(at V
GS
= 4.5V)
< 7mQ
< 12mQ
⚫
⚫
100%
A
valanche
Tested
RoHS Compliant
pin assignment
Application
⚫
⚫
Power switch
DC
/
D
C converters
DFN3*3-8L
Device
Marking
Package
DFN3*3-8L
Packaging
5000
p
cs
/
R
eel
G
3
0
N
0
3
D
3
G30N03
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
30
V
V
DS
Continuous Drain Current
30
A
A
I
D
(note1)
120
I
DM
Pulsed Drain Current
Gate-Source Voltage
V
V
GS
±20
24
Power Dissipation
W
mJ
P
D
Single pulse avalanche energy
（
note2
）
EAS
49
Operating Junction and Storage Temperature Range
ºC
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
R
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
24
ºC/W
ºC/W
thJA
R
5.2
thJC
TEL
：
0755-29961263
FAX:0755-29961466(A1368)
G30N03D3
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Max.
Min.
Static Parameters
V
(BR)DSS
Drain-Source Breakdown Voltage
30
—
V
—
V
GS
= 0V, I
D
= 250µA
—
—
Zero Gate Voltage Drain Current
Gate-Source Leakage
1
I
DSS
I
GSS
V
DS
= 30V, V
GS
= 0V, T
J
= 25ºC
uA
nA
V
±
100
2.5
7
V
GS
=
±
20V
—
1
—
Gate-Source Threshold Voltage
V
GS(th)
1.4
V
DS
= V
GS
, I
D
= 250µA
5
7
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 15A
V
DS
= 5V,I
D
= 20A
—
—
—
R
DS(on)
Drain-Source On-Resistance
mΩ
S
12
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
40
—
1260
230
185
13
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 15V,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
f = 1.0MHz
V
DD
= 15V,
I
D
= 20A,
Gate-Source Charge
Gate-Drain Charge
2.2
2.6
5
Q
gs
Q
gd
t
d(on)
V
GS
= 10V
Turn-on Delay Time
V
DD
= 15V,
I
D
= 20A,
3
Turn-on Rise Time
Turn-off Delay Time
t
r
ns
t
d(off)
20
3
R
G
= 3Ω
Turn-off Fall Time
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
A
T
C
= 25ºC
30
1.2
—
I
S
—
—
V
T
J
= 25ºC, I
SD
= 20A, V
GS
= 0V
V
SD
Q
rr
—
—
—
nC
ns
Reverse Recovery Charge
15.2
I
F
= 20A, V
GS
= 0V
di/dt=-500A/us
—
—
Reverse Recovery Time
T
rr
12.6
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466(A1368)
G30N03D3
Gate Charge Test Circuit
EAS Test Circuit
Switch Time Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1368)
G30N03D3
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1
. Output
Characteristics
Figure 2
. Transfer
Characteristics
160
140
120
100
80
160
140
120
100
80
10V
8V
V
DS
=5V
6V
5V
4V
60
60
25
℃
40
40
V
GS
=3.3V
20
20
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
, Drain
–
t
o
–
S
ource Voltage
(
V
)
V
GS
, Gate
–
t
o
–
S
ource Voltage
(
V
)
Figure 3.Rdson-Drain Current
Figure 4. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
V
DD
=15V
I
D
=20A
V
GS
=4.5V
V
GS
=10V
0
10
20
30
40
0
2.5
5
7.5
10
12.5
15
I
D
– Drain
Current( A)
Qg Gate Charge
(
nC
)
Figure 5
. Capacitance
vs Vds
Figure 6
. Source-
Drain Diode Forward
2000
1800
1600
1400
1200
1000
800
Ciss
600
Coss
400
Crss
200
0
0
5
10
15
20
25
30
V
DS
Drain- Source
Voltage( V)
V
SD
, Source
–
t
o
–
D
rain Voltage
(
V
)
TEL
：
0755-29961263
FAX:0755-29961466(A1368)
G30N03D3
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Drain-Source On-Resistance
Figure 8. Safe Operation Area
V
GS
= 10V
I
D
= 20A
V
GS
= 4.5V
I
D
= 15A
V
DS
, Drain-
Source Voltage(
V)
T
J
, Junction
Temperature (
º
C)
Figure 9
. Normalized
Maximum Transient
Thermal Impedance
5.2°C/W
Pulse Width (
s)
TEL
：
0755-29961263
FAX:0755-29961466(A1368)
G30N03D3
DFN3x3-8L Package Information
D1
A
D2
E3
θ
E5
E2
E4
t
E1 E
K
b
L
c
e
L1
D
D
A1
COMMON
MM
SYMBOL
MIN
0.70
NOM
0.75
MAX
A
A1
b
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14。
–
–
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12。
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
K
0.59
0.30
0.06
0
L
L1
t
θ
10。
TEL
：
0755-29961263
FAX:0755-29961466(A1368)
