GOFORD-G35P04D5
| Part # | GOFORD-G35P04D5 |
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G35P04D5
P-Channel Enhancement Mode Power MOSFET
Description
The G35P04D5 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
-40V
⚫
I
D
(at V
GS
= -10V)
⚫
R
DS(ON)
(at V
GS
= -10V)
⚫
R
DS(ON)
(at V
GS
= -4.5V)
-35A
< 14m
Ω
< 20m
Ω
⚫
100% Avalanche Tested
⚫
RoHS Compliant
Application
Marking and pin assignment
⚫
Power switch
⚫
DC/DC converters
DFN5*6
Marking
Device
Package
DFN5*6
Packaging
G35P04D5
G35P04
5000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-40
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-35
-140
±
20
A
A
V
(note1)
I
DM
V
GS
Power Dissipation
P
D
35
W
Single pulse avalanche energy
（
note3
）
E
AS
132
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Case
R
thJC
3.6
TEL
：
0755-29961262
FAX:0755-29961466(A1516)
G35P04D5
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
=
±
20V
-40
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-2.3
14
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -15A
V
GS
= -4.5V, I
D
= -10A
V
DS
=-5V,I
D
=-10A
-1.2
—
-1.5
11
15
27
Drain-Source On-Resistance
R
DS(on)
m
Ω
—
20
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
3280
343
285
60
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -20V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -20V,
I
D
= -10A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
8.2
11.6
11
Turn-on Delay Time
Turn-on Rise Time
V
DD
= -20
V
,
I
D
= -10A,
R
G
= 3
Ω
9
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
24
12
Drain-Source Body Diode Characteristics
Body Diode Voltage
V
SD
T
rr
I
S
= -15A, V
GS
= 0V
—
—
—
—
-1.2
—
V
Reverse Recovery Time
46
27
ns
nC
I
S
= -20A, V
GS
= 0V
di/dt=-100A/us
Recerse Recovery Charge
Q
rr
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. EAS
condition : Tj=25
℃
,V
DD
=-40V,V
G
=-10V,L=0.5mH,Rg=25
Ω
TEL
：
0755-29961262
FAX:0755-29961466(A1516)
G35P04D5
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961262
FAX:0755-29961466(A1516)
G35P04D5
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
V
DD
=-20V
I
D
=-10A
V
GS
= -10V
V
GS
= -4.5V
-I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance vs Vds
Figure 6. Source-Drain Diode Forward
Ciss
Coss
Crss
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
FAX:0755-29961466(A1516)
TEL
：
0755-29961262
G35P04D5
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V
I
D
= -15A
R
DS(ON)
limited
100us
1ms
10ms
V
GS
= -4.5V
I
D
= -10A
DC
T
J(Max)=
150
℃
T
C
=25
℃
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961262
FAX:0755-29961466(A1516)
G35P04D5
DFN5
×
6-8L Package Information
TEL
：
0755-29961262
FAX:0755-29961466(A1516)
