GOFORD-G40P03K
| Part # | GOFORD-G40P03K |
| Download | GOFORD-G40P03K |
G40P03K
P-Channel Enhancement Mode Power MOSFET
Description
The G40P03K uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
l
V
DS
-30V
-40A
< 13mΩ
< 23mΩ
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -4.5V)
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
TO-252
Ordering Information
Device
Package
TO-252
Marking
Packaging
2500pcs/Reel
G40P03K
G40P03
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-30
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-40
-160
±
20
A
A
V
(note1)
I
DM
V
GS
Power Dissipation
P
D
78
72
W
Single pulse avalanche energy
(
note2
)
E
AS
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
ºC/W
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
50
1.6
TEL
:
0755-29961263
FAX:0755-29961466(A1553)
G40P03K
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±
20V
-30
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-2.5
13
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=- 250µA
V
GS
= -10V, I
D
= -15A
V
GS
= -4.5V, I
D
= -10A
V
DS
= -5V,I
D
= -10A
-1
—
-1.5
7.5
10
52
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
23
g
FS
—
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
2622
348
346
50
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -15V,
I
D
= -10A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
9
12
Turn-on Delay Time
Turn-on Rise Time
18
V
DD
= -15
V
,
I
D
= -10A,
R
G
= -3Ω
12.5
125
66
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
-40
-1.2
—
A
V
V
SD
Q
rr
Trr
T
J
= 25ºC, I
SD
= -15A, V
GS
= 0V
Reverse Recovery Charge
62
32
nC
ns
I
F
= -20A, V
GS
= 0V
di/dt=-500A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
:
0755-29961263
FAX:0755-29961466(A1553)
G40P03K
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
:
0755-29961263
FAX:0755-29961466(A1553)
G40P03K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
-4.5V
V
DS
= -5V
-10V
-6V
-4V
-5V
V
GS
= -3.5V
25
℃
0
1
2
3
4
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
16
14
12
10
8
10
8
V
DD
= -15V,
I
D
= -10A
V
GS
=-4.5V
V
GS
=-10V
6
4
6
4
2
2
0
0
0
10
20
30
40
50
60
0
10
20
30
40
-I
D
-Drain Current (A)
Qg Gate Charge
(
nC
)
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
3500
3000
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
5
10
15
20
25
30
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
:
0755-29961263
FAX:0755-29961466(A1553)
G40P03K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
= -10V,
I
D
= -15A
V
GS
= -4.5V,
I
D
= -10A
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
1.6
°
C/W
Pulse Width (s)
TEL
:
0755-29961263
FAX:0755-29961466(A1553)
G40P03K
TO-252 Package information
E
b3
c
E1
b
e
L
(L1)
COMMON DIMENSIONS
mm
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
2.20
0.00
0.97
0.68
5.20
0.43
5.98
2.30
–
2.40
0.20
1.17
0.90
5.50
0.63
6.22
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
–
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
0.50
1.65
1.28
1.00
1.95
8
°
–
1.80
–
0
°
TEL
:
0755-29961263
FAX:0755-29961466(A1553)
