GOFORD-G45P40T

G45P40T  

P-Channel Enhancement Mode Power MOSFET  

Description  

The G45P40T uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

General Features  

l

V

DS  

-40V  

-45A  

< 16mΩ  

< 28mΩ  

l

I

D

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -4.5V)  

Schematic diagram  

l

100% Avalanche Tested  

l

RoHS Compliant  

Application  

l

Power switch  

l

DC/DC converters  

TO-220  

Device  

Package  

TO-220  

Marking  

Packaging  

50pcs/Tube  

G45P40T  

G45P40  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

-40  

V

Continuous Drain Current  

Pulsed Drain Current  

I

D  

I

DM  

-45  

-180  

A

A

(note1)  

Gate-Source Voltage  

V

GS  

±

20  

V

Power Dissipation  

P

D  

80  

W

ºC  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance, Junction-to-Ambient  

Maximum Junction-to-Case  

R

thJA  

R

thJC  

50  

ºC/W  

ºC/W  

1.88  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1554

）  

G45P40T  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Typ.  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

V

DS

= -40V, V

GS

= 0V  

V

GS

=

±

20V  

-40  

—  

—  

—  

—  

-1  

V

uA  

nA  

V

I

GSS  

—  

—  

±

100  

-2.5  

16  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= – 30A  

V

GS

= -4.5V, I

D

= – 20A  

V

DS

= 5V,I

D

= -30A  

-1.2  

—  

-1.5  

10.5  

15  

47  

mΩ  

mΩ  

S

Drain-Source On-Resistance  

R

DS(on)  

—  

28  

g

FS  

—  

—  

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

3269  

343  

281  

42  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= -20V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DD

= -20V,  

I

D

= -12A,  

V

GS

= -10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

7

10  

Turn-on Delay Time  

Turn-on Rise Time  

10  

V

DD

= -20

V

,  

I

D

= -12A,  

R

G

= 3Ω  

18  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

38  

24  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

-45  

-1.2  

—  

A

V

V

SD  

T

rr  

T

J

= 25ºC, I

SD

= -20A, V

GS

= 0V  

Reverse Recovery Time  

40  

42  

ns  

ns  

I

S

= -12A, V

GS

= 0V  

di/dt=-100A/us  

Reverse Recovery Charge  

Qrr  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1554

）  

G45P40T  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1554

）  

G45P40T  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

160  

10V  

140  

120  

100  

80  

8V  

6V  

5V  

4.5V  

60  

40  

20  

V

GS

= 3.3V  

0

0

1

2

3

4

5

-V

DS

, Drain-to-Source Voltage (V)  

-V

GS

, Gate-to-Source Voltage (V)  

Figure 3. Gate Charge  

Figure 4. Drain Source On Resistance  

22  

20  

18  

16  

14  

12  

10  

8

V

GS

= – 4.5V  

V

GS

= – 10V  

6

4

0

10  

20  

30  

40  

50  

60  

Qg Gate Charge

（

nC

）  

-ID-Drain Current

（

A

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

4500  

4000  

3500  

3000  

2500  

2000  

1500  

1000  

500  

Ciss  

Coss  

Crss  

0

0

10  

20  

30  

40  

-Vds Drain-Source Voltage(V)  

-V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1554

）  

G45P40T  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 8. Safe Operation Area  

Figure 7. Drain-Source On-Resistance  

T

J

, Junction Temperature (

º

C)  

-V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1554

）  

G45P40T  

TO-220 Package Information  

Dimensions in Millimeters  

Symbol  

MIN.  

4.37  

1.25  

2.2  

NOM.  

4.57  

1.3  

MAX.  

4.7  

A

A1  

A2  

b

1.4  

2.4  

2.6  

0.7  

0.8  

0.95  

1.47  

0.6  

b2  

c

1.7  

1.27  

0.5  

0.45  

15.1  

8.8  

D

15.6  

9.1  

16.1  

9.4  

D1  

D2  

E

ꢀ

ꢀ

5.5  

9.7  

10  

2.54BSC  

5.08BSC  

6.5  

10.3  

e

e1  

H1  

L

6.25  

6.85  

13.8  

3.4  

3.8  

3

12.75  

13.5  

ꢀ

L1  

∅

P  

Q

3.1  

3.4  

2.6  

3.6  

2.8  

TEL

：

0755-29961263  

FAX:0755-29961466

（

A1554

）