GOFORD-G48N03D3
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G48N03D3
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G48N03D3 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 10V)
30V
48A
< 6m
Ω
⚫
R
DS(ON)
(at V
GS
= 4.5V)
⚫
100% Avalanche Tested
⚫
RoHS Compliant
< 8m
Ω
Marking and pin assignment
Application
⚫
Power switch
⚫
DC/DC converters
DFN3X3-8L
Marking
Device
Package
DFN3X3-8L
Packaging
G48N03D3
G48N03
5000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
30
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
48
A
A
V
(note1)
I
DM
V
GS
190
±
20
Power Dissipation
P
D
45
90
W
Single pulse avalanche energy
（
note3
）
E
AS
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Case
R
thJC
2.8
TEL
：
0755-29961263
FAX:0755-29961466
（
-MT
）
G48N03D3
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
=
±
20V
30
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±
100
2.4
6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
1.1
—
1.6
5
Drain-Source On-Resistance
R
DS(on)
m
Ω
—
6
8
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1784
266
212
38
6
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 15V,
I
D
= 20A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Q
gs
Q
gd
t
d(on)
t
r
8
7
V
DD
= 15
V
,
I
D
= 20A,
R
G
= 6
Ω
6
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
30
8
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
48
A
V
V
SD
T
J
= 25ºC, I
SD
= 20A, V
GS
= 0V
1.2
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. EAS
condition : Tj=25
℃
,VDD=30V,VGS=10V,L=0.5mH,Rg=25
Ω
TEL
：
0755-29961263
FAX:0755-29961466
（
-MT
）
G48N03D3
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
（
-MT
）
G48N03D3
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Gate Charge
Figure 4. Drain Source On Resistance
V
GS
=4.5V
V
GS
=10V
Qg Gate Charge
（
nC
）
ID-Drain Current
（
A
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
（
-MT
）
G48N03D3
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
（
-MT
）
G48N03D3
GOFORD
DFN3X3-8L Packag
e
i
nformation
D1
A
D2
E3
θ
E5
E2
E4
t
E1 E
K
b
L
c
e
L1
D
A1
COMMON
MM
SYMBOL
MIN
NO M
MAX
A
A1
b
0.70
–
0.75
–
0.85
0.05
0.40
0.25
3.45
3.25
2.65
3.45
3.20
1.94
0.65
0.77
0.30
0.70
0.89
0.50
0.20
0.13
14
°
0.20
0.10
3.15
3.00
2.29
3.15
2.90
1.54
0.28
0.37
0.10
0.60
0.59
0.30
0.06
0
0.30
0.152
3.30
3.15
2.45
3.30
3.05
1.74
0.48
0.57
0.20
0.65
0.69
0.40
0.125
0.075
12
°
c
D
D1
D2
E
E1
E2
E3
E4
E5
e
K
L
L1
t
θ
10
°
TEL
：
0755-29961263
FAX:0755-29961466
（
-MT
）
